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公开(公告)号:US07534709B2
公开(公告)日:2009-05-19
申请号:US11233580
申请日:2005-09-23
申请人: Jae-Hwa Park , Gil-Heyun Choi , Chang-Won Lee , Byung-Hak Lee , Hee-Sook Park , Woong-Hee Sohn , Jong-Ryeol Yoo , Sun-Pil Yun , Jang-Hee Lee , Dong-Chan Lim
发明人: Jae-Hwa Park , Gil-Heyun Choi , Chang-Won Lee , Byung-Hak Lee , Hee-Sook Park , Woong-Hee Sohn , Jong-Ryeol Yoo , Sun-Pil Yun , Jang-Hee Lee , Dong-Chan Lim
IPC分类号: H01L21/3205
CPC分类号: H01L21/76841 , H01L21/28061 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/4933 , H01L29/4941
摘要: Embodiments of the present invention include semiconductor devices that can be made with relatively low resistance, and methods of forming the semiconductor devices. A resistance reducing layer is formed between a polysilicon layer and a metal layer. As a result, an interface resistance between the polysilicon layer and the metal layer is greatly reduced and a distribution of the interface resistance is very uniform. As a result, a conductive structure including the resistance reducing layer has a greatly reduced sheet resistance to improve electrical characteristics of a semiconductor device having the conductive structure.
摘要翻译: 本发明的实施例包括可以制造成具有较低电阻的半导体器件,以及形成半导体器件的方法。 在多晶硅层和金属层之间形成电阻降低层。 结果,多晶硅层和金属层之间的界面电阻大大降低,并且界面电阻的分布非常均匀。 结果,包括电阻降低层的导电结构具有大大降低的薄层电阻以改善具有导电结构的半导体器件的电特性。
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公开(公告)号:US20060014355A1
公开(公告)日:2006-01-19
申请号:US11233580
申请日:2005-09-23
申请人: Jae-Hwa Park , Gil-Heyun Choi , Chang-Won Lee , Byung-Hak Lee , Hee-Sook Park , Woong-Hee Sohn , Jong-Ryeol Yoo , Sun-Pil Yun , Jang-Hee Lee , Dong-Chan Lim
发明人: Jae-Hwa Park , Gil-Heyun Choi , Chang-Won Lee , Byung-Hak Lee , Hee-Sook Park , Woong-Hee Sohn , Jong-Ryeol Yoo , Sun-Pil Yun , Jang-Hee Lee , Dong-Chan Lim
IPC分类号: H01L21/20
CPC分类号: H01L21/76841 , H01L21/28061 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/4933 , H01L29/4941
摘要: Embodiments of the present invention include semiconductor devices that can be made with relatively low resistance, and methods of forming the semiconductor devices. A resistance reducing layer is formed between a polysilicon layer and a metal layer. As a result, an interface resistance between the polysilicon layer and the metal layer is greatly reduced and a distribution of the interface resistance is very uniform. As a result, a conductive structure including the resistance reducing layer has a greatly reduced sheet resistance to improve electrical characteristics of a semiconductor device having the conductive structure.
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