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8 条记录 (耗时 0.015 秒)

    Error Compensating Method for Instrument Transformer
    5.
    发明申请
    Error Compensating Method for Instrument Transformer 审中-公开
    仪器变压器误差补偿方法

    公开(公告)号：US20110210715A1

    公开(公告)日：2011-09-01

    申请号：US11991607

    申请日：2006-07-27

    申请人： Yong Kyun Kim ,  Yong Cheol Kang ,  Sung Il Jang

    发明人： Yong Kyun Kim ,  Yong Cheol Kang ,  Sung Il Jang

    IPC分类号： H01F38/28

    CPC分类号： H01F27/422 ,  G01R35/02

    摘要： Provided an error compensating method for an instrument transformer, in which an error of an instrument transformer is compensated by reflecting hysteresis characteristics of iron core. When such error compensation is performed, a hysteresis loop indicating the relationship between magnetic flux and excitation current is not used as it is, but core-loss resistances and magnetic flux-excitation current curves are used, thereby achieving more precise compensation. According to the present invention, an error of an instrument transformer can be significantly reduced. Therefore, it is possible to manufacture an instrument transformer with high accuracy and to significantly reduce the size of the instrument transformer. Further, a material with high permeability does not need to be used in order to increase the accuracy.

    摘要翻译： 提供了一种仪表变压器的误差补偿方法，其中通过反映铁芯的磁滞特性来补偿仪表变压器的误差。 当进行这种误差补偿时，不直接使用指示磁通与励磁电流的关系的磁滞回线，而是使用铁心损耗电阻和磁通励磁电流曲线，从而实现更精确的补偿。 根据本发明，可以显着地减少仪表变压器的误差。 因此，可以以高精度制造仪表变压器，并显着减小仪表变压器的尺寸。 此外，为了提高精度，不需要使用具有高磁导率的材料。

    Apparatus for and method of heat-treating a wafer
    8.
    发明授权
    Apparatus for and method of heat-treating a wafer 失效

    公开(公告)号：US06746972B1

    公开(公告)日：2004-06-08

    申请号：US09605660

    申请日：2000-06-28

    申请人： Choung Hyep Kim ,  Sung Il Jang ,  Kyung Seo Park ,  Ki Hyon Chyun ,  Hee Sun Chab

    发明人： Choung Hyep Kim ,  Sung Il Jang ,  Kyung Seo Park ,  Ki Hyon Chyun ,  Hee Sun Chab

    IPC分类号： H01L2126

    CPC分类号： H01L21/67109 ,  Y10S414/135

    摘要： An apparatus for and a method of heat-treating a wafer for use in producing a semiconductor device ensures a desired distribution of surface temperatures across the wafer. Spacers are used to space the wafer above a heat transfer plate. The spacers can be used to adjust the spacing and inclination of the wafer relative to the heat transfer plate by predetermined amounts determined in advance to produce the desired distribution of surface temperatures across the wafer during heat-treatment. With the present invention, wafers can be heat-treated during production using a plurality of bake units disposed in parallel because each of the bake units can be precisely adjusted using the spacers to produce surface temperature distributions similar to a standard surface temperature distribution. Accordingly, the productivity of the semiconductor manufacturing process can be markedly enhanced.