公开(公告)号：US08609549B2

公开(公告)日：2013-12-17

申请号：US13045988

申请日：2011-03-11

申请人： Sungtae Lee ,  Masahiro Ogasawara ,  Junichi Sasaki ,  Naohito Yanagida

发明人： Sungtae Lee ,  Masahiro Ogasawara ,  Junichi Sasaki ,  Naohito Yanagida

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01J37/32091

摘要： A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14.

摘要翻译： 提供了一种等离子体蚀刻方法，用于通过在非晶碳膜的图案作为最终掩模的非晶碳膜上形成的氧化硅膜或氮化硅膜上进行等离子体蚀刻，所述多层掩模包括具有 预定图案，在光致抗蚀剂层下形成的有机底部防反射涂层（BARC）膜，在BARC膜下面形成的SiON膜和形成在SiON膜下面的无定形碳膜。 在氧化硅膜或氮化硅膜的等离子体蚀刻开始时使用的初始掩模是在无定形碳膜上残留SiON膜的状态和无定形碳膜的膜厚比 残留SiON膜的膜厚小于或等于约14。

公开(公告)号：US20130029493A1

公开(公告)日：2013-01-31

申请号：US13644619

申请日：2012-10-04

申请人： Masahiro OGASAWARA ,  Sungtae Lee

发明人： Masahiro OGASAWARA ,  Sungtae Lee

IPC分类号： H01L21/3065

CPC分类号： H01L21/31144 ,  H01J37/32091 ,  H01J37/32935 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31122

摘要： A plasma etching method, for plasma-etching a target substrate including at least a film to be etched, an organic film to become a mask of the to-be-etched film, and a Si-containing film which are stacked in order from bottom, includes the first organic film etching step, the treatment step and the second organic film etching step when the organic film is etched to form a mask pattern of the to-be-etched film. In the first organic film etching step, a portion of the organic film is etched. In the treatment step, the Si-containing film and the organic film are exposed to plasma of a rare gas after the first organic film etching step. In the second organic film etching step, the remaining portion of the organic film is etched after the treatment step.

摘要翻译： 一种等离子体蚀刻方法，用于等离子体蚀刻至少包括要蚀刻的膜的目标衬底，成为被蚀刻膜的掩模的有机膜和从底部依次层叠的含Si膜 包括第一有机膜蚀刻步骤，处理步骤和第二有机膜蚀刻步骤，当有机膜被蚀刻以形成被蚀刻膜的掩模图案时。 在第一有机膜蚀刻步骤中，有机膜的一部分被蚀刻。 在处理步骤中，在第一有机膜蚀刻步骤之后，将含Si膜和有机膜暴露于稀有气体的等离子体。 在第二有机膜蚀刻步骤中，在处理步骤之后蚀刻剩余部分有机膜。

公开(公告)号：US20110250761A1

公开(公告)日：2011-10-13

申请号：US13045988

申请日：2011-03-11

申请人： Sungtae LEE ,  Masahiro Ogasawara ,  Junichi Sasaki ,  Naohito Yanagida

发明人： Sungtae LEE ,  Masahiro Ogasawara ,  Junichi Sasaki ,  Naohito Yanagida

IPC分类号： H01L21/3065

CPC分类号： H01L21/31144 ,  H01J37/32091

摘要： A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14.

摘要翻译： 提供了一种等离子体蚀刻方法，用于通过在非晶碳膜的图案作为最终掩模的非晶碳膜上形成的氧化硅膜或氮化硅膜上进行等离子体蚀刻，所述多层掩模包括具有 预定图案，在光致抗蚀剂层下形成的有机底部防反射涂层（BARC）膜，在BARC膜下面形成的SiON膜和形成在SiON膜下面的无定形碳膜。 在氧化硅膜或氮化硅膜的等离子体蚀刻开始时使用的初始掩模是在无定形碳膜上残留SiON膜的状态和无定形碳膜的膜厚比 残留SiON膜的膜厚小于或等于约14。

公开(公告)号：US20100163525A1

公开(公告)日：2010-07-01

申请号：US12646142

申请日：2009-12-23

申请人： Sungtae LEE ,  Masahiro Ogasawara ,  Masahiro Ito

发明人： Sungtae LEE ,  Masahiro Ogasawara ,  Masahiro Ito

IPC分类号： B44C1/22

CPC分类号： H01L21/31138 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144

摘要： Disclosed is a substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer. The intermediate layer is etched under a processing pressure of 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using as a processing gas a mixture gas of CF4, CHF3, and C4F8, and the mask layer is etched by using a COS-containing gas as a processing gas.

摘要翻译： 公开了一种基板处理方法，该方法包括目标层，掩模层和中间层，其被层叠在目标层上，通过中间层和掩模层在目标层上形成图案。 通过使用CF4，CHF3和C4F8的混合气体作为处理气体，在100mTorr（1.33×10Pa）至150mTorr（2.0×10Pa）的加工压力下对中间层进行蚀刻，并且掩模层被蚀刻 通过使用含COS气体作为处理气体。

公开(公告)号：US20100003825A1

公开(公告)日：2010-01-07

申请号：US12497106

申请日：2009-07-02

申请人： Masahiro OGASAWARA ,  Sungtae Lee

发明人： Masahiro OGASAWARA ,  Sungtae Lee

IPC分类号： H01L21/467

CPC分类号： H01L21/31144 ,  H01J37/32091 ,  H01J37/32935 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31122

摘要： A plasma etching method, for plasma-etching a target substrate including at least a film to be etched, an organic film to become a mask of the to-be-etched film, and a Si-containing film which are stacked in order from bottom, includes the first organic film etching step, the treatment step and the second organic film etching step when the organic film is etched to form a mask pattern of the to-be-etched film. In the first organic film etching step, a portion of the organic film is etched. In the treatment step, the Si-containing film and the organic film are exposed to plasma of a rare gas after the first organic film etching step. In the second organic film etching step, the remaining portion of the organic film is etched after the treatment step.

摘要翻译： 一种等离子体蚀刻方法，用于等离子体蚀刻至少包括要蚀刻的膜的目标衬底，成为被蚀刻膜的掩模的有机膜和从底部依次层叠的含Si膜 包括第一有机膜蚀刻步骤，处理步骤和第二有机膜蚀刻步骤，当有机膜被蚀刻以形成被蚀刻膜的掩模图案时。 在第一有机膜蚀刻步骤中，有机膜的一部分被蚀刻。 在处理步骤中，在第一有机膜蚀刻步骤之后，将含Si膜和有机膜暴露于稀有气体的等离子体。 在第二有机膜蚀刻步骤中，在处理步骤之后蚀刻剩余部分有机膜。

公开(公告)号：US08642482B2

公开(公告)日：2014-02-04

申请号：US13644619

申请日：2012-10-04

申请人： Masahiro Ogasawara ,  Sungtae Lee

发明人： Masahiro Ogasawara ,  Sungtae Lee

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01J37/32091 ,  H01J37/32935 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31122

摘要： A plasma etching method, for plasma-etching a target substrate including at least a film to be etched, an organic film to become a mask of the to-be-etched film, and a Si-containing film which are stacked in order from bottom, includes the first organic film etching step, the treatment step and the second organic film etching step when the organic film is etched to form a mask pattern of the to-be-etched film. In the first organic film etching step, a portion of the organic film is etched. In the treatment step, the Si-containing film and the organic film are exposed to plasma of a rare gas after the first organic film etching step. In the second organic film etching step, the remaining portion of the organic film is etched after the treatment step.

摘要翻译： 一种等离子体蚀刻方法，用于等离子体蚀刻至少包括要蚀刻的膜的目标衬底，成为被蚀刻膜的掩模的有机膜和从底部依次层叠的含Si膜 包括第一有机膜蚀刻步骤，处理步骤和第二有机膜蚀刻步骤，当有机膜被蚀刻以形成被蚀刻膜的掩模图案时。 在第一有机膜蚀刻步骤中，有机膜的一部分被蚀刻。 在处理步骤中，在第一有机膜蚀刻步骤之后，将含Si膜和有机膜暴露于稀有气体的等离子体。 在第二有机膜蚀刻步骤中，在处理步骤之后蚀刻剩余部分有机膜。

公开(公告)号：US08298960B2

公开(公告)日：2012-10-30

申请号：US12497106

申请日：2009-07-02

申请人： Masahiro Ogasawara ,  Sungtae Lee

发明人： Masahiro Ogasawara ,  Sungtae Lee

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01J37/32091 ,  H01J37/32935 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31122

摘要： A plasma etching method, for plasma-etching a target substrate including at least a film to be etched, an organic film to become a mask of the to-be-etched film, and a Si-containing film which are stacked in order from bottom, includes the first organic film etching step, the treatment step and the second organic film etching step when the organic film is etched to form a mask pattern of the to-be-etched film. In the first organic film etching step, a portion of the organic film is etched. In the treatment step, the Si-containing film and the organic film are exposed to plasma of a rare gas after the first organic film etching step. In the second organic film etching step, the remaining portion of the organic film is etched after the treatment step.

摘要翻译： 一种等离子体蚀刻方法，用于等离子体蚀刻至少包括要蚀刻的膜的目标衬底，成为被蚀刻膜的掩模的有机膜和从底部依次层叠的含Si膜 包括第一有机膜蚀刻步骤，处理步骤和第二有机膜蚀刻步骤，当有机膜被蚀刻以形成被蚀刻膜的掩模图案时。 在第一有机膜蚀刻步骤中，有机膜的一部分被蚀刻。 在处理步骤中，在第一有机膜蚀刻步骤之后，将含Si膜和有机膜暴露于稀有气体的等离子体。 在第二有机膜蚀刻步骤中，在处理步骤之后蚀刻剩余部分有机膜。

公开(公告)号：US08986561B2

公开(公告)日：2015-03-24

申请号：US12646142

申请日：2009-12-23

申请人： Sungtae Lee ,  Masahiro Ogasawara ,  Masahiro Ito

发明人： Sungtae Lee ,  Masahiro Ogasawara ,  Masahiro Ito

IPC分类号： C03C15/00 ,  H01L21/311

CPC分类号： H01L21/31138 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144

摘要： Disclosed is a substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer. The intermediate layer is etched under a processing pressure of 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using as a processing gas a mixture gas of CF4, CHF3, and C4F8, and the mask layer is etched by using a COS-containing gas as a processing gas.

摘要翻译： 公开了一种基板处理方法，该方法包括目标层，掩模层和中间层，其被层叠在目标层上，通过中间层和掩模层在目标层上形成图案。 通过使用CF4，CHF3和C4F8的混合气体作为处理气体，在100mTorr（1.33×10Pa）至150mTorr（2.0×10Pa）的加工压力下对中间层进行蚀刻，并且掩模层被蚀刻 通过使用含COS气体作为处理气体。

公开(公告)号：US08303719B2

公开(公告)日：2012-11-06

申请号：US12389057

申请日：2009-02-19

申请人： Sungtae Lee ,  Yusuke Nakagawa ,  Jun Yashiro

发明人： Sungtae Lee ,  Yusuke Nakagawa ,  Jun Yashiro

IPC分类号： B08B9/08 ,  B08B5/00

CPC分类号： H01L21/67069

摘要： A deposit removing method that can reliably remove deposit produced in plasma processing using plasma produced from a process gas containing methane gas and oxygen gas. In a chamber in which an electrode to which radio frequency electrical power is supplied is disposed, plasma processing is carried out on a substrate using the plasma produced from the process gas containing methane gas and oxygen gas, and then a cleaning step is carried out in which plasma is produced from a mixed gas containing fluorinated compound gas containing hydrogen in the chamber.

摘要翻译： 一种沉积物去除方法，其可以可靠地消除使用由含有甲烷气体和氧气的工艺气体产生的等离子体处理中产生的沉积物。 在其中设置提供射频电力的电极的室中，使用由含有甲烷气体和氧气的处理气体产生的等离子体在基板上进行等离子体处理，然后进行清洁步骤 该等离子体是由室内含有氢的含氟化合物气体的混合气体产生的。

公开(公告)号：US20090205678A1

公开(公告)日：2009-08-20

申请号：US12389057

申请日：2009-02-19

申请人： Sungtae LEE ,  Yusuke Nakagawa ,  Jun Yashiro

发明人： Sungtae LEE ,  Yusuke Nakagawa ,  Jun Yashiro

IPC分类号： B08B6/00

CPC分类号： H01L21/67069

摘要： A deposit removing method that can reliably remove deposit produced in plasma processing using plasma produced from a process gas containing methane gas and oxygen gas. In a chamber in which an electrode to which radio frequency electrical power is supplied is disposed, plasma processing is carried out on a substrate using the plasma produced from the process gas containing methane gas and oxygen gas, and then a cleaning step is carried out in which plasma is produced from a mixed gas containing fluorinated compound gas containing hydrogen in the chamber.

摘要翻译： 一种沉积物去除方法，其可以可靠地消除使用由含有甲烷气体和氧气的工艺气体产生的等离子体处理中产生的沉积物。 在其中设置提供射频电力的电极的室中，使用由含有甲烷气体和氧气的处理气体产生的等离子体在基板上进行等离子体处理，然后进行清洁步骤 该等离子体是由室内含有氢的含氟化合物气体的混合气体产生的。