SEMICONDUCTOR DEVICE, COMMUNICATION APPARATUS, AND PRODUCING METHOD THEREOF

    公开(公告)号:US20240120903A1

    公开(公告)日:2024-04-11

    申请号:US18222532

    申请日:2023-07-17

    CPC classification number: H03H9/542 H03H9/02125 H03H9/0514

    Abstract: A semiconductor device including a first functional module arranged on a first substrate and having a chip, an electrical connection component and a sealing ring, where the sealing ring surrounds the chip, and the chip is electrically connected to the electrical connection component; a second functional module having a packaging substrate, where the packaging substrate includes at least two metal layers and a dielectrical layer between the metal layers; a third functional module having multiple redistribution lines and multiple micro through holes for electrical connection between the first functional module and the second functional module, where the electrical connection component in the first functional module is electrically connected to the third functional module; and a second substrate, where the second substrate is sealed with the first substrate.

    PIEZOELECTRIC STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND PIEZOELECTRIC RESONATOR COMPRISING PIEZOELECTRIC STRUCTURE

    公开(公告)号:US20240243718A1

    公开(公告)日:2024-07-18

    申请号:US18567999

    申请日:2021-12-31

    CPC classification number: H03H9/02015 H03H3/02 H03H9/17

    Abstract: The present disclosure relates to a piezoelectric structure with an optimized electromechanical coupling coefficient, a method for manufacturing the piezoelectric structure, and a piezoelectric resonator including the piezoelectric structure. The piezoelectric structure according to the present disclosure may include a piezoelectric layer doped with a first doping element at a first doping concentration. The first doping concentration varies along a thickness direction of the piezoelectric layer with at least two change rates. An electromechanical coupling coefficient of the piezoelectric layer continuously varies along the thickness direction of the piezoelectric layer. According to the present disclosure, a piezoelectric structure with an electromechanical coupling coefficient varying continuously and/or cyclically along a thickness direction of a piezoelectric layer may be obtained without significant increase of extra process cost, and a figure of merit of a piezoelectric resonator including the piezoelectric structure is finally improved.

    Resonator for testing, method for manufacturing resonator for testing, and method for testing resonator

    公开(公告)号:US11973488B1

    公开(公告)日:2024-04-30

    申请号:US18373212

    申请日:2023-09-26

    CPC classification number: H03H9/17 H01L22/30 H03H3/02 H03H9/131 H03H9/02007

    Abstract: A resonator for testing, a method for manufacturing a resonator for testing, and a method for testing a resonator are provided. The resonator for testing includes: a testing substrate, a testing bottom electrode, a testing piezoelectric layer, a testing top electrode, at least one first testing electrode, and at least one second testing electrode. The first testing electrode is connected to the testing bottom electrode, the second testing electrode is connected to the testing top electrode, a spacing region is arranged between the first testing electrode and the second testing electrode, and a thickness between the testing piezoelectric layer and at least one of the first testing electrode and the second testing electrode is greater than a predetermined thickness to insulate the first testing electrode and the second testing electrode. With the technical solutions according to the present disclosure, the accuracy of the detected resonance frequency adjustment amount caused by the mass loading layer to be tested is improve.

    Semiconductor device, communication apparatus, and producing method thereof

    公开(公告)号:US12126327B2

    公开(公告)日:2024-10-22

    申请号:US18222532

    申请日:2023-07-17

    CPC classification number: H03H9/542 H03H9/02125 H03H9/0514

    Abstract: A semiconductor device including a first functional module arranged on a first substrate and having a chip, an electrical connection component and a sealing ring, where the sealing ring surrounds the chip, and the chip is electrically connected to the electrical connection component; a second functional module having a packaging substrate, where the packaging substrate includes at least two metal layers and a dielectric layer between the metal layers; a third functional module having multiple redistribution lines and multiple micro through holes for electrical connection between the first functional module and the second functional module, where the electrical connection component in the first functional module is electrically connected to the third functional module; and a second substrate, where the second substrate is sealed with the first substrate.

    RESONATOR FOR TESTING, METHOD FOR MANUFACTURING RESONATOR FOR TESTING, AND METHOD FOR TESTING RESONATOR

    公开(公告)号:US20240120899A1

    公开(公告)日:2024-04-11

    申请号:US18373212

    申请日:2023-09-26

    CPC classification number: H03H9/17 H01L22/30 H03H3/02 H03H9/131 H03H9/02007

    Abstract: A resonator for testing, a method for manufacturing a resonator for testing, and a method for testing a resonator are provided. The resonator for testing includes: a testing substrate, a testing bottom electrode, a testing piezoelectric layer, a testing top electrode, at least one first testing electrode, and at least one second testing electrode. The first testing electrode is connected to the testing bottom electrode, the second testing electrode is connected to the testing top electrode, a spacing region is arranged between the first testing electrode and the second testing electrode, and a thickness between the testing piezoelectric layer and at least one of the first testing electrode and the second testing electrode is greater than a predetermined thickness to insulate the first testing electrode and the second testing electrode. With the technical solutions according to the present disclosure, the accuracy of the detected resonance frequency adjustment amount caused by the mass loading layer to be tested is improve.

Patent Agency Ranking