摘要:
Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.
摘要:
Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.
摘要:
Provided is a light emitting material in which: a light emitting layer comprising a columnar part of which a cross-sectional shape is column such as cylindrical column, and a light emitting part of which a cross-sectional shape is cone or pyramid; and light generated in the light emitting part is extracted outside through the columnar part. The light emitting material allows light to be efficiently extracted to the outside to improve luminance.
摘要:
There are provided a composite oxide of triclinic crystal system comprising zinc and tungsten, and a production method thereof. Further, there is provided a light-emitting material comprising the composite oxide of triclinic crystal system comprising zinc and tungsten.
摘要:
A sputtering target for fluorescent thin-film formation comprising a matrix material and a luminescent center material, wherein said matrix material has a chemical composition represented by the following formula (1), and simultaneously satisfies conditions represented by the following inequalities (2) to (5). MIIvAxByOzSw (1) 0.05≦v/x≦5 (2) 1≦y/x≦6 (3) 0.01≦z/(z+w)≦0.85 (4) 0.6≦(v+x+3y/2)/(z+w)≦1.5 (5) wherein MII represents one or more elements selected from the group consisting of Zn, Cd and Hg, A represents one or more elements selected from the group consisting of Mg, Ca, Sr, Ba and rare earth elements, B represents one or more elements selected from the group consisting of Al, Ga and In, and v, x, y, z and w each represent numerical values satisfying the conditions specified in the inequalities (2) to (5).
摘要:
The invention aims to provide a phosphor thin film eliminating a need for filters, having a satisfactory color purity, suited for RGB in full-color EL displays, enabling to simplify the manufacture process of full-color EL panels, and offering the advantages of minimized variation of luminance, increased yields, and reduced manufacture cost, a method for preparing the same and an EL panel. Such objects are achieved by a phosphor thin film formed of a matrix material comprising an oxysulfide consisting of at least one compound selected from rare earth thioaluminates, rare earth thiogallates and rare earth thioindates, in which oxygen is incorporated, the matrix material further containing an element serving as a luminescent center, a method for preparing the same, and an EL panel using the same.
摘要:
Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-intensity light emission can be realized. The compound semiconductor film has a composition represented by a Cu2—Zn—IV—S4 type, in which the IV is at least one of Ge and Si. The light emitting film includes the light emitting material and the compound semiconductor film laminated on a substrate in the stated order.
摘要:
Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.
摘要:
A sample measurement method is a sample measurement method by an electron microscope and includes the film formation step of forming a sample on a projection on the major surface of a substrate, the electron beam irradiation step of irradiating the sample with an electron beam from a side of the projection, and the measurement step of detecting an electron beam which is generated or reflected from or has passed through the sample irradiated with the electron beam. Since the sample is formed on the projection on the major surface of the substrate, the sample on the projection can be formed as a thin film. For this reason, sample measurement can be executed only by irradiating the sample from a side of the projection.
摘要:
In a phosphor thin film comprising a matrix material and a luminescence center, the matrix material has the compositional formula: MIIvAxByOzSw wherein MII is Zn, Cd or Hg, A is Mg, Ca, Sr, Ba or rare earth element, B is Al, Ga or In, and atomic ratios v, x, y, z and w are 0.005≦v≦5, 1≦x≦5, 1≦y≦15, 0
摘要翻译:在包含基质材料和发光中心的磷光体薄膜中,基质材料具有以下组成式:M II B 其中M II是Zn,Cd或Hg,A是Mg,Ca,Sr, Ba或稀土元素,B为Al,Ga或In,原子比v,x,y,z和w为0.005 <= v <= 5,1 <= x <= 5,1 <= y <= 15 ,0