摘要:
A self-refresh timer circuit for generating a timer period for controlling self-refresh operation of a semiconductor memory device comprising: a temperature-dependent voltage source for outputting a voltage having a temperature dependency based on a diode characteristic; a control current generating circuit for applying an output voltage of the temperature-dependent voltage source to a temperature detecting device having a diode characteristic and for generating a control current having a magnitude in proportion to a current flowing through the temperature detecting device; and a timer period generating circuit for generating a timer period in inverse proportion to the magnitude of the control current.
摘要:
A delay circuit comprises: N-stage circuits having a first circuit to an N-th circuit connected in cascade, the input signal being input to the first circuit and a transmission signal delayed by a (k-1)-stage (where 2≦k≦N) circuit is input to a k-th circuit for sequential transmission; a common delay circuit for delaying the transmission signal of each stage commonly; and path control means for controlling a path of an i-th (1≦i≦N) circuit so that during a predetermined period from an edge timing of a signal input to the i-th circuit to an edge timing of the transmission signal delayed by the common delay circuit through the i-th circuit, the common delay circuit is connected to a signal path, and during the other period, the common delay circuit is disconnected from the signal path, wherein the delayed signal passing through the common delay circuit N times is generated.
摘要翻译:延迟电路包括:N级电路,具有级联连接的第N电路的第一电路,输入信号被输入到第一电路和延迟了(k-1)级的传输信号(其中2 < = k <= N)电路输入到第k个电路进行顺序传输; 用于延迟每个级的传输信号的公共延迟电路; 以及路径控制装置,用于控制第i(1≤i≤N)个电路的路径,使得在从输入到第i个电路的信号的边沿定时到传输的边缘定时的预定时段期间 由公共延迟电路通过第i电路延迟的信号,公共延迟电路连接到信号路径,而在另一周期期间,公共延迟电路与信号路径断开,其中延迟信号通过公共 延迟电路产生N次。
摘要:
A self-refresh timer circuit for generating a timer period for controlling self-refresh operation of a semiconductor memory device comprising: a temperature-dependent voltage source for outputting a voltage having a temperature dependency based on a diode characteristic; a control current generating circuit for applying an output voltage of the temperature-dependent voltage source to a temperature detecting device having a diode characteristic and for generating a control current having a magnitude in proportion to a current flowing through the temperature detecting device; and a timer period generating circuit for generating a timer period in inverse proportion to the magnitude of the control current.
摘要:
A delay circuit comprises: N-stage circuits having a first circit to a N-th circuit connected in cascade, the input signal being input to the first circuit and a transmission signal delayed by a (k-1)-stage (where 2≦k≦N) circuit is input to a k-th circuit for sequential transmission; a common delay circuit for delaying the transmission signal of each stage commonly; and path control means for controlling a path of an i-th (1≦i≦N) circuit so that during a predetermined period from an edge timing of a signal input to the i-th circuit to an edge timing of the transmission signal delayed by the common delay circuit through the i-th circuit, the common delay circuit is connected to a signal path, and during the other period, the common delay circuit is disconnected from the signal path, wherein the delayed signal passing through the common delay circuit N times is generated.
摘要翻译:延迟电路包括:N级电路,其具有第一级联到级联的第N级电路,输入信号被输入到第一电路和延迟了(k-1)阶段的传输信号(其中2 < = k <= N)电路输入到第k个电路进行顺序传输; 用于延迟每个级的传输信号的公共延迟电路; 以及路径控制装置,用于控制第i(1≤i≤N)个电路的路径,使得在从输入到第i个电路的信号的边沿定时到传输的边缘定时的预定时段期间 由公共延迟电路通过第i个电路延迟的信号,公共延迟电路连接到信号路径,在另一周期期间,公共延迟电路与信号路径断开,其中延迟信号通过公共 延迟电路产生N次。
摘要:
A self-refresh timer circuit for generating a timer period for controlling self-refresh operation of a semiconductor memory device comprising: a temperature-dependent voltage source for outputting a voltage having a temperature dependency based on a diode characteristic; a control current generating circuit for applying an output voltage of the temperature-dependent voltage source to a temperature detecting device having a diode characteristic and for generating a control current having a magnitude in proportion to a current flowing through the temperature detecting device; and a timer period generating circuit for generating a timer period in inverse proportion to the magnitude of the control current.
摘要:
A semiconductor device includes: first and second input/output terminals; a first input/output line connected to the first input/output terminal; a second input/output line connected to the second input/output terminal; and a first by-path route that connects the first input/output line and the second input/output line. When in normal operation mode, the first by-path route is set in a non-conductive state. When in a test mode, the first by-path route is set into a conductive state so that a first data inputted to the first input/output terminal is outputted as a first data to the second input/output line, in correspondence with a transition of a clock signal in the first direction, and so that a second data inputted to said first input/output terminal is outputted as a second input data for said first input/output line, in correspondence with a transition of said clock signal in the second direction.
摘要:
A delay circuit comprises: N-stage circuits having a first circuit to an N-th circuit connected in cascade, the input signal being input to the first circuit and a transmission signal delayed by a (k−1)-stage (where 2≦k≦N) circuit is input to a k-th circuit for sequential transmission; a common delay circuit for delaying the transmission signal of each stage commonly; and path control means for controlling a path of an i-th (1≦i≦N) circuit so that during a predetermined period from an edge timing of a signal input to the i-th circuit to an edge timing of the transmission signal delayed by the common delay circuit through the i-th circuit, the common delay circuit is connected to a signal path, and during the other period, the common delay circuit is disconnected from the signal path, wherein the delayed signal passing through the common delay circuit N times is generated.
摘要:
A delay circuit comprises: N-stage circuits having a first circit to a N-th circuit connected in cascade, the input signal being input to the first circuit and a transmission signal delayed by a (k-1)-stage (where 2≦k≦N) circuit is input to a k-th circuit for sequential transmission; a common delay circuit for delaying the transmission signal of each stage commonly; and path control means for controlling a path of an i-th (1≦i≦N) circuit so that during a predetermined period from an edge timing of a signal input to the i-th circuit to an edge timing of the transmission signal delayed by the common delay circuit through the i-th circuit, the common delay circuit is connected to a signal path, and during the other period, the common delay circuit is disconnected from the signal path, wherein the delayed signal passing through the common delay circuit N times is generated.
摘要翻译:延迟电路包括:N级电路,其具有第一级联到级联的第N级电路,输入信号被输入到第一电路和延迟了(k-1)阶段的传输信号(其中2 < = k <= N)电路输入到第k个电路进行顺序传输; 用于延迟每个级的传输信号的公共延迟电路; 以及路径控制装置,用于控制第i(1≤i≤N)个电路的路径,使得在从输入到第i个电路的信号的边沿定时到传输的边缘定时的预定时段期间 由公共延迟电路通过第i电路延迟的信号,公共延迟电路连接到信号路径,而在另一周期期间,公共延迟电路与信号路径断开,其中延迟信号通过公共 延迟电路产生N次。
摘要:
A semiconductor device includes: first and second input/output terminals; a first input/output line connected to the first input/output terminal; a second input/output line connected to the second input/output terminal; and a first by-path route that connects the first input/output line and the second input/output line. When in normal operation mode, the first by-path route is set in a non-conductive state. When in a test mode, the first by-path route is set into a conductive state so that a first data inputted to the first input/output terminal is outputted as a first data to the second input/output line, in correspondence with a transition of a clock signal in the first direction, and so that a second data inputted to said first input/output terminal is outputted as a second input data for said first input/output line, in correspondence with a transition of said clock signal in the second direction.
摘要:
A self-refresh timer circuit for generating a timer period for controlling self-refresh operation of a semiconductor memory device comprising: a temperature-dependent voltage source for outputting a voltage having a temperature dependency based on a diode characteristic; a control current generating circuit for applying an output voltage of the temperature-dependent voltage source to a temperature detecting device having a diode characteristic and for generating a control current having a magnitude in proportion to a current flowing through the temperature detecting device; and a timer period generating circuit for generating a timer period in inverse proportion to the magnitude of the control current.