摘要:
High-speed operation is achieved without increase in a circuit current and unstable operation of data strobe signal level due to collision between data strobe signals. Each of RAMs 11a and 11b outputs a data signal DQ and a data strobe signal DQS indicative of an output timing of the data signal. RAM 11a includes a strobe signal control unit 15a that determines whether RAM 11b connected in parallel with the RAM 11a is in a read state or not, and delays an output start timing of data strobe signal DQS when the RAM 11b is in the read state. Strobe signal control unit 15a of the RAM 11a controls output start timing so that a latter half portion of a preamble period of the data strobe signal DQS to be output coincides with a postamble period of the data strobe signal DQS output by the RAM 11b.
摘要:
A semiconductor device includes: first and second input/output terminals; a first input/output line connected to the first input/output terminal; a second input/output line connected to the second input/output terminal; and a first by-path route that connects the first input/output line and the second input/output line. When in normal operation mode, the first by-path route is set in a non-conductive state. When in a test mode, the first by-path route is set into a conductive state so that a first data inputted to the first input/output terminal is outputted as a first data to the second input/output line, in correspondence with a transition of a clock signal in the first direction, and so that a second data inputted to said first input/output terminal is outputted as a second input data for said first input/output line, in correspondence with a transition of said clock signal in the second direction.
摘要:
A feed screw mechanism including a screwed shaft which moves linearly along with the control shaft, and a rotation spindle which rotates in a circumferential direction. The feed screw mechanism converts a rotational movement of the rotation spindle into a linear movement of the screwed shaft. A protrusion protrudes outwardly from the rotation spindle. An internal thread member engages with an outer wall surface of the rotation spindle. A motor stator generating a magnetic is positioned over the rotation spindle, and is sandwiched between the protrusion and the internal thread member in an axial direction of the rotation spindle.
摘要:
An actuator for a valve lift control device linearly moves a control shaft to change a valve lift in accordance with an axial position of the control shaft. A first and a second rotation cam integrally rotate around a common rotation axis by transmission of torque, so that a direct acting follower, which includes a first and a contact members, linearly moves with a control shaft. The first and a second rotation cams are respectively in contact with the first and the second contact members via a first and a second contact points. The first contact point is located on the opposite side of the second contact point with respect to the rotation axis. A sum of a first rotation cam lift of the first rotation cam and a second rotation cam lift of the second rotation cam is substantially constant in a predetermined rotation angular range of the first rotation cam and the second rotation cam.
摘要:
A semiconductor memory device is provided for preventing a late-write from disturbing a refresh operation and also for reducing a current consumption in a write cycle with execution of the late-write. Upon a transition of an address ADD, an address transition detector circuit detects this address transition. Upon receipt of a result of detection by the address transition detector circuit, a state control circuit judges an operation to be executed, from an output enable signal /OE and a write enable signal /WE, and then outputs any of a read statement RS, a write statement WS, and a refresh statement FS. According to a clock signal ACLK, input signals such as addresses are taken for executions of operations based on the statements.
摘要:
Refresh of memory cells is performed periodically by a refresh timer, and collision between memory access and memory refresh is avoided. When memory access occurs, an F/F 163 is set by a one shot pulse from an OS circuit 161, a memory access request is inputted to a memory accessing pulse generator circuit 171 through a NOR gate 167, and a latch control signal LC and an enable signal REN are outputted. When a refresh request from the refresh timer is inputted to an AND gate 168 during the memory access, the output of the NOR gate 167 is at the “L” level, and the refresh request is blocked by the AND gate 168. Thereafter, at the time when the latch control signal LC is turned into the “L” level, F/Fs 163, 164 and 165 are reset, the output of the NOR gate 167 is turned into the “H” level, the refresh request is inputted to a refreshing pulse generator circuit 170, and a refresh enable signal RERF is outputted.
摘要翻译:通过刷新定时器周期性地执行存储器单元的刷新,并避免存储器访问和存储器刷新之间的冲突。 当存储器访问发生时,通过来自OS电路161的单触发脉冲设置F / F 163,通过NOR门167将存储器访问请求输入到存储器访问脉冲发生器电路171,以及锁存控制信号LC和 输出使能信号REN。 当在存储器访问期间来自刷新定时器的刷新请求被输入到与门168时,或非门167的输出处于“L”电平,刷新请求由与门168阻止。此后, 当锁存控制信号LC变为“L”电平时,F / F 163,164和165被复位,或非门167的输出变成“H”电平,刷新请求被输入到 输出刷新脉冲发生器电路170和刷新使能信号RERF。
摘要:
A one-shot signal generation circuit is provided which makes it easy to adjust pulse width and to deal with variation of skew of an ATD signal, and can reduce chip area. A timing determination section (100) is reset by an edge of a first detected signal among a plurality of address transition detection signals (ATD signals) which have arrived within the skew period of an address signal, measures a first predetermined time by taking an edge of a second detected signal as start instant, and outputs a signal DST which reflects the result of this measurement. A timing determination section (110) measures a second predetermined time by taking an edge of the first detected signal as start instant, and outputs a signal PG which reflects the result of this measurement. An LC generation circuit (14) outputs a one-shot signal (LC) whose start instant is determined by the signal PG and whose end instant is determined by the signal DST.
摘要:
An ignition distributor has a hollow housing. A distributor cap having a caved portion that extends in the housing is mounted on one end of the housing. The other end of the housing supports a rotation shaft. An ignition coil is disposed in the caved portion of the distributor cap. A rotor electrode of a distributor section is connected to the shaft, and rotates around the caved portion of the distributor cap. Side electrodes are arranged to face the rotor electrode with its rotation. Thus, the space surrounding the ignition coil is fully utilized to arrange the distributor section. This results in a compact ignition distributor.
摘要:
Thia-diazole derivatives having the following partial structural formula had selective herbicidal activity on some crops. A process for producing these compounds is also disclosed: ##STR1##
摘要:
The present invention provides a non-synchronous semiconductor memory device configured as a pseudo-SRAM and capable of relaxing the limitation to address skew and improving the read rate. A data latch circuit 110 holds data having been read out of memory cells in a memory cell array 106 designated by a tow address included in an address ADD in a read mode. Upon transitions of column addresses A0, A1 included in the address, a multiplexer 111 sequentially and non-synchronously feeds out the data held in the data latch circuit 110 based on the column addresses A0, A1.