公开(公告)号：US07341809B2

公开(公告)日：2008-03-11

申请号：US11432963

申请日：2006-05-12

申请人： Tae-moon Jeong ,  Seong-hyuck Kim ,  Seong-woon Choi

发明人： Tae-moon Jeong ,  Seong-hyuck Kim ,  Seong-woon Choi

IPC分类号： G03F9/00

CPC分类号： G03F1/26 ,  G03F1/28 ,  G03F1/44 ,  G03F7/70283 ,  G03F7/706

摘要： Provided are a photomask, a method for manufacturing the photomask and a method for measuring optical characteristics of a wafer exposure system, the measuring method using the photomask during manufacture. The photomask includes a substrate and a measuring pattern including a light opaque region pattern formed on the substrate and a plurality of light transmitting region patterns that are formed in regions divided by the light opaque region pattern and provoke phase shifts to provide phase differences to light transmitted through light transmitting regions. Precise measurements of the degree of a focus and lens aberrations of an exposure system using the photomask are obtained.

摘要翻译： 本发明提供的光掩模，用于制造光掩模和用于在制造过程中使用光掩模的测量方法测量的晶片曝光系统的光学特性的方法的方法。 光掩模包括基板和包括形成在基板上的不透光区域图案的测量图案和形成在由不透光区域图案划分的区域中的多个透光区域图案，并且引起相移，以提供与透射的光的相位差 通过透光区域。 获得使用光掩模的曝光系统的聚焦程度和透镜像差的精确测量。

公开(公告)号：US20050083518A1

公开(公告)日：2005-04-21

申请号：US10974950

申请日：2004-10-28

申请人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

发明人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

IPC分类号： G03F1/14 ,  G03F7/20 ,  G01N21/00

CPC分类号： G03F7/70591 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70941

摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.

摘要翻译： 用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法 提供所需的线宽。 执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案 将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。 使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。 此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案 比。 更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。

公开(公告)号：US06919149B2

公开(公告)日：2005-07-19

申请号：US10414217

申请日：2003-04-16

申请人： Seong-hyuck Kim ,  Tae-moon Jeong ,  In-kyun Shin

发明人： Seong-hyuck Kim ,  Tae-moon Jeong ,  In-kyun Shin

IPC分类号： G02B5/18 ,  G03F1/30 ,  G03F1/68 ,  H01L21/027 ,  G01F9/00

CPC分类号： G03F1/30

摘要： A wave guided alternating phase shift mask (WGAPSM) includes a substrate transparent to light from an exposure light source and a waveguide pattern formed on the substrate to define a plurality of transparent regions that are regularly arranged. The transparent regions defined by the waveguide pattern include a plurality of shift transparent regions formed of recess regions of the substrate and a plurality of non-shift transparent regions alternatively arranged with the shift transparent regions. The provided WGAPSM minimizes an error of critical dimension difference and an X-effect while securing a large process margin and not generating opaque defects. A fabricating method for the provided WGAPSM is also provided.

摘要翻译： 波导交替相移掩模（WGAPSM）包括对来自曝光光源的光透明的基板和形成在基板上的波导图案，以限定规则排列的多个透明区域。 由波导图案限定的透明区域包括由基板的凹部区域形成的多个偏移透明区域和交替布置有偏移透明区域的多个非透明区域。 提供的WGAPSM最大限度地减少临界尺寸差异和X效应，同时确保大的工艺裕度，并且不产生不透明缺陷。 还提供了所提供的WGAPSM的制造方法。

公开(公告)号：US06835507B2

公开(公告)日：2004-12-28

申请号：US10211359

申请日：2002-08-05

申请人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

发明人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

IPC分类号： G03F900

CPC分类号： G03F7/70591 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70941

摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.

摘要翻译： 用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法 提供所需的线宽。 执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案 将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。 使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。 此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案 比。 更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。

公开(公告)号：US07393615B2

公开(公告)日：2008-07-01

申请号：US10974950

申请日：2004-10-28

申请人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

发明人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

IPC分类号： G03F1/00 ,  G06F17/21

CPC分类号： G03F7/70591 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70941

摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.

摘要翻译： 用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法 提供所需的线宽。 执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案 将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。 使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。 此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案 比。 更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。

公开(公告)号：US20060204864A1

公开(公告)日：2006-09-14

申请号：US11432963

申请日：2006-05-12

申请人： Tae-moon Jeong ,  Seong-hyuck Kim ,  Seong-woon Choi

发明人： Tae-moon Jeong ,  Seong-hyuck Kim ,  Seong-woon Choi

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/26 ,  G03F1/28 ,  G03F1/44 ,  G03F7/70283 ,  G03F7/706

摘要： Provided are a photomask, a method for manufacturing the photomask and a method for measuring optical characteristics of a wafer exposure system, the measuring method using the photomask during manufacture. The photomask includes a substrate and a measuring pattern including a light opaque region pattern formed on the substrate and a plurality of light transmitting region patterns that are formed in regions divided by the light opaque region pattern and provoke phase shifts to provide phase differences to light transmitted through light transmitting regions. Precise measurements of the degree of a focus and lens aberrations of an exposure system using the photomask are obtained.

公开(公告)号：US07070891B2

公开(公告)日：2006-07-04

申请号：US10383192

申请日：2003-03-06

申请人： Tae-moon Jeong ,  Seong-hyuck Kim ,  Seong-woon Choi

发明人： Tae-moon Jeong ,  Seong-hyuck Kim ,  Seong-woon Choi

IPC分类号： G03C5/00 ,  G03F9/00

CPC分类号： G03F1/26 ,  G03F1/28 ,  G03F1/44 ,  G03F7/70283 ,  G03F7/706

摘要： Provided are a photomask, a method for manufacturing the photomask and a method for measuring optical characteristics of a wafer exposure system, the measuring method using the photomask during manufacture. The photomask includes a substrate and a measuring pattern including a light opaque region pattern formed on the substrate and a plurality of light transmitting region patterns that are formed in regions divided by the light opaque region pattern and provoke phase shifts to provide phase differences to light transmitted through light transmitting regions. Precise measurements of the degree of a focus and lens aberrations of an exposure system using the photomask are obtained.