公开(公告)号：US06775815B2

公开(公告)日：2004-08-10

申请号：US10225417

申请日：2002-08-22

申请人： Won-tai Ki ,  Seung-hune Yang ,  Ji-hyeon Choi

发明人： Won-tai Ki ,  Seung-hune Yang ,  Ji-hyeon Choi

IPC分类号： G06F1750

CPC分类号： G03F1/78 ,  G03F7/2061 ,  G03F7/3028

摘要： A method for correcting line width variation occurring during a development process in fabricating a photomask and a recording medium in which the exposure method is recorded is provided, wherein pattern line width variation occurring in a development process with respect to a desirable pattern is estimated, and a corrective exposure is performed using a dose or bias of an electron beam corresponding to the estimated pattern line width variation. Accordingly, pattern line width variation occurring during a development process can be reduced.

公开(公告)号：US07065735B2

公开(公告)日：2006-06-20

申请号：US10401856

申请日：2003-03-27

申请人： Won-Tai Ki ,  Seong-Woon Choi

发明人： Won-Tai Ki ,  Seong-Woon Choi

IPC分类号： G06F17/50

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/36 ,  G03F1/78 ,  H01J37/3174 ,  H01J2237/31769

摘要： This disclosure provides a method for manufacturing an optical proximity correction (OPC) mask, the method using an electron beam, and an OPC mask manufactured using the method. In the method, a mask is placed on a holder and a mask pattern for a photolithography process formed on the mask by illuminating the mask with an electron beam. A desired pattern is formed on the mask and an amended pattern is formed in consideration of a Kennel Effect by changing the size of the electron beam in a portion of the desired pattern where the Kennel Effect occurs. With the method, an amended pattern is made by defocusing an electron beam to change the size of the electron beam. Accordingly, an additional large amended pattern file is not required and the CPU memory for an apparatus using this method is not overloaded. This method thereby simplifies the process of manufacturing an OPC mask and complicated amended patterns are easily produced.

公开(公告)号：US06835507B2

公开(公告)日：2004-12-28

申请号：US10211359

申请日：2002-08-05

申请人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

发明人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

IPC分类号： G03F900

CPC分类号： G03F7/70591 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70941

摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.

摘要翻译： 用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法 提供所需的线宽。 执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案 将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。 使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。 此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案 比。 更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。

公开(公告)号：US06617084B2

公开(公告)日：2003-09-09

申请号：US10012569

申请日：2001-12-12

申请人： Won-tai Ki

发明人： Won-tai Ki

IPC分类号： G03F900

CPC分类号： G03F1/20 ,  Y10S430/143

摘要： An E-beam mask for use in a lithographic process includes a main pattern of stripes of patterned chrome or tungsten formed on a membrane. The stripes of the main pattern are inspected for defects. Dummy stripes corresponding to a defective stripe of the main pattern are formed on the membrane in spare room outside the region bounded by the main pattern. E-beam exposure processes are then carried out using only the non-defective stripes of the main pattern, and the non-defective dummy stripes instead of a defective stripe of the main pattern once the lithographic process has progressed to the defective stripe of the main pattern. When the lithographic process is being used to manufacture DRAM cells, some of the stripes of the main pattern will have the same chrome or tungsten patterns. As long as all of these similar stripes of the main pattern are not defective, then the E-beam processes can be carried out in a sequence using the non-defective stripes of the main pattern only. However, if all of the similar stripes of the main pattern are determined to be defective, a corresponding dummy stripe is produced on the membrane. In this case, the dummy stripe is used in the lithographic process instead of the similar defective stripes of the main pattern.

摘要翻译： 用于光刻工艺的电子束掩模包括形成在膜上的图案化的铬或钨的条纹的主要图案。 检查主图案的条纹是否有缺陷。 对应于主图案的有缺陷条纹的虚拟条纹形成在由主图案限定的区域之外的备用房间的膜上。 然后，一旦光刻处理进行到主要图案的缺陷条纹，则仅使用主图案的无缺陷条纹和无缺陷伪条而不是主图案的有缺陷条纹进行电子束曝光处理 模式。 当光刻工艺用于制造DRAM单元时，主图案的一些条纹将具有相同的铬或钨图案。 只要主图案的所有这些类似的条纹都不是有缺陷的，那么电子束处理可以仅使用主图案的无缺陷条纹的顺序进行。 然而，如果主图案的所有相似条纹被确定为有缺陷的，则在膜上产生相应的虚条。 在这种情况下，在光刻工艺中使用虚拟条纹，而不是主图案的类似缺陷条纹。

公开(公告)号：US07393615B2

公开(公告)日：2008-07-01

申请号：US10974950

申请日：2004-10-28

申请人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

发明人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

IPC分类号： G03F1/00 ,  G06F17/21

CPC分类号： G03F7/70591 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70941

摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.

摘要翻译： 用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法 提供所需的线宽。 执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案 将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。 使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。 此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案 比。 更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。

公开(公告)号：US07185312B2

公开(公告)日：2007-02-27

申请号：US10873242

申请日：2004-06-23

申请人： Won-tai Ki ,  Seung-hune Yang ,  Ji-hyeon Choi

发明人： Won-tai Ki ,  Seung-hune Yang ,  Ji-hyeon Choi

IPC分类号： G06F17/50 ,  G03C5/00

CPC分类号： G03F1/78 ,  G03F7/2061 ,  G03F7/3028

摘要： A method for correcting line width variation occurring during a development process in fabricating a photomask and a recording medium in which the exposure method is recorded is provided, wherein pattern line width variation occurring in a development process with respect to a desirable pattern is estimated, and a corrective exposure is performed using a dose or bias of an electron beam corresponding to the estimated pattern line width variation. Accordingly, pattern line width variation occurring during a development process can be reduced.

摘要翻译： 提供了一种用于校正在制造光掩模期间的显影处理中发生的线宽变化的方法和其中记录曝光方法的记录介质，其中估计在相对于期望图案的显影处理中发生的图案线宽度变化，以及 使用与估计的图案线宽度变化相对应的电子束的剂量或偏置来执行校正曝光。 因此，可以减少在显影处理期间发生的图案线宽度变化。

公开(公告)号：US06475684B2

公开(公告)日：2002-11-05

申请号：US09839189

申请日：2001-04-19

申请人： Won-tai Ki

发明人： Won-tai Ki

IPC分类号： G03F900

CPC分类号： G03F1/36 ,  G03F1/68 ,  Y10S430/143

摘要： A method of exposing a photomask substrate, provides an exposing method for correcting a loading effect generated when a photomask substrate is dry etched. Accordingly, a variation in line width caused by a loading effect generated due to the non-uniformity of a loading density is reduced by a method of performing correction exposure using a dose corresponding to the loading effect due to a desired pattern which is calculated from a relationship represented as the convolution of a Gaussian distribution and a loading density.

摘要翻译： 一种曝光光掩模衬底的方法提供了一种用于校正当光掩模衬底被干蚀刻时产生的负载效应的曝光方法。 因此，由于负载密度的不均匀性而产生的负载效应引起的线宽的变化通过使用与由负载效应相对应的剂量进行校正曝光的方法而降低，这是由于根据从 关系表示为高斯分布和加载密度的卷积。

公开(公告)号：US20050083518A1

公开(公告)日：2005-04-21

申请号：US10974950

申请日：2004-10-28

申请人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

发明人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

IPC分类号： G03F1/14 ,  G03F7/20 ,  G01N21/00

CPC分类号： G03F7/70591 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70941

摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.

摘要翻译： 用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法 提供所需的线宽。 执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案 将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。 使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。 此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案 比。 更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。

公开(公告)号：US06689520B2

公开(公告)日：2004-02-10

申请号：US10080032

申请日：2002-02-21

申请人： Won-tai Ki

发明人： Won-tai Ki

IPC分类号： G03F900

CPC分类号： G03F1/78 ,  G03F1/68 ,  H01J37/3026 ,  H01J2237/31764 ,  Y10S430/143

摘要： An exposure method for correcting dimension variations in a pattern resulting from the fogging effect occurring during electron beam exposure and/or the loading effect occurring during dry etching, and a recording medium for recording the same are provided. According to the exposure method, dimension variations can be minimized by calculating the loading effect and/or fogging effect causing dimension variations in a pattern, correcting mask pattern dimension data in advance based on a calculated result and making exposure according to the corrected pattern data. Further, the loading effect and/or fogging effect can be easily calculated because the above-described method can be realized as a computer program and the computer program can be included in an exposure tool, thereby enabling exposure based on a corrected value.

摘要翻译： 提供了用于校正由电子束曝光期间发生的起雾效应引起的图案中的尺寸变化和/或在干蚀刻期间发生的加载效应的曝光方法，以及用于记录干涉蚀刻的记录介质。 根据曝光方法，通过计算图案中的尺寸变化的加载效果和/或起雾效果，根据计算结果预先校正掩模图案尺寸数据，并根据校正图案数据进行曝光，可以使尺寸变化最小化。 此外，可以容易地计算装载效果和/或起雾效果，因为上述方法可以被实现为计算机程序，并且计算机程序可以被包括在曝光工具中，从而可以基于校正值进行曝光。

公开(公告)号：US06291119B1

公开(公告)日：2001-09-18

申请号：US09758708

申请日：2001-01-11

申请人： Ji-hyeon Choi ,  Won-tai Ki

发明人： Ji-hyeon Choi ,  Won-tai Ki

IPC分类号： G03F900

摘要： The present invention relates to electron beam lithography, and is directed to a method of compensating for pattern dimension variation caused by a re-scattered electron beam when an electron beam resist is exposed to the electron beam. The method of compensating for pattern dimension variation caused by a re-scattered electron beam comprises the steps of: dividing original exposure pattens into square sections; obtaining a dose of supplemental exposure to the re-scattered electron beam; and compensation-exposing the electron beam resist so that the supplemental exposure dose may be the same for all sections. According to the present invention, the pattern dimension variation can be compensated for a re-scattering effect of the electron beam, thereby uniformly forming a fine pattern width of a more highly-integrated circuit.