公开(公告)号：US08467637B2

公开(公告)日：2013-06-18

申请号：US12598162

申请日：2008-04-30

申请人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

发明人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

IPC分类号： G02B6/12 ,  G02B6/26 ,  H01L29/47

CPC分类号： H01L31/022408 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/02325

摘要： In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

摘要翻译： 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ到λλ通过光波导路径芯透射的光的波长的间隔排列。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。

公开(公告)号：US07076135B2

公开(公告)日：2006-07-11

申请号：US10666482

申请日：2003-09-18

申请人： Koji Yamada ,  Tai Tsuchizawa ,  Shingo Uchiyama ,  Tetsufumi Shoji ,  Jyun-ichi Takahashi ,  Toshifumi Watanabe ,  Emi Tamechika ,  Hirofumi Morita

发明人： Koji Yamada ,  Tai Tsuchizawa ,  Shingo Uchiyama ,  Tetsufumi Shoji ,  Jyun-ichi Takahashi ,  Toshifumi Watanabe ,  Emi Tamechika ,  Hirofumi Morita

IPC分类号： G02B6/26 ,  G02B6/42 ,  G02B6/10

CPC分类号： G02B6/305 ,  G02B6/1228 ,  G02B2006/12176

摘要： An optical module includes an under cladding, a first core, a second core, and an over cladding. The under cladding has a flat shape as a whole. The first core has a quadrangular cross section and is placed on the under cladding. The second core is placed on a terminal end portion of the first core. The over cladding is placed in a region including the terminal end portion of the first core and the second core placed on the terminal end portion of the first core. The under cladding and the first core placed thereon constitute a first optical waveguide. The under cladding, the terminal end portion of the first core placed on the under cladding, the second core placed thereon, and the over cladding placed on and around the second core constitute a mode field size conversion portion. The under cladding, the second core placed on the under cladding, and the over cladding placed on and around the second core constitute a second optical waveguide. The first core is made of silicon. The first and second cores differ in cross-sectional shape. A manufacturing method for the optical module is also disclosed.

摘要翻译： 光学模块包括下包层，第一芯，第二芯和外包层。 下包层整体呈扁平形状。 第一芯具有四边形横截面并且放置在下包层上。 第二芯放置在第一芯的末端部分上。 上包层放置在包括第一芯的末端部分和放置在第一芯的终端部分上的第二芯的区域中。 下敷层和放置在其上的第一芯构成第一光波导。 下包层，第一芯的终端部分放置在下包层上，第二芯放置在其上，并且放置在第二芯上和周围的上包层构成模场尺寸转换部分。 放置在下包层上的下包层，第二芯和放置在第二芯上并围绕第二芯的外包层构成第二光波导。 第一个核心由硅制成。 第一和第二芯的横截面形状不同。 还公开了一种用于光学模块的制造方法。

公开(公告)号：US20100119192A1

公开(公告)日：2010-05-13

申请号：US12598162

申请日：2008-04-30

申请人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

发明人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

IPC分类号： G02B6/12 ,  H01L31/0232

CPC分类号： H01L31/022408 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/02325

摘要： In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

摘要翻译： 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ至λ[λ：通过光波导路径芯透射的光的波长]的间隔布置。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。