摘要:
The present inventions provide processes for producing a highly polymerized aromatic polycarbonate resin comprising a highly-polymerizing process wherein an aromatic polycarbonate is reacted with an aliphatic diol compound represented by formula (g1) in the presence of a transesterification catalyst to increase the molecular weight: wherein Ra and Rb each independently represent a hydrogen atom, a linear or branched alkyl group having 1-12 carbon atoms or a phenyl group, and “m” represents an integer of 1-30.
摘要:
A branched aromatic polycarbonate resin having a degree of branching (N value) controlled within a specific range is manufactured by subjecting an aromatic polycarbonate prepolymer that has a branched structure introduced using a specific amount of a branching agent to molecular-weight-increasing linking reaction with an aliphatic diol compound in the presence of a transesterification catalyst under the condition of a reduced pressure. The amount (A) of the branching agent used is adjusted on the basis of the correlation between the amount (A) of the branching agent used and the N value of the branched aromatic polycarbonate resin.
摘要:
[Problem] To provide a process for manufacturing, easily and using a conventional branching agent, a branched aromatic polycarbonate resin which has both a sufficiently high molecular weight and a desired degree of branching. [Solution] A branched aromatic polycarbonate resin having a degree of branching (N value) controlled within a specific range is manufactured by subjecting an aromatic polycarbonate prepolymer that has a branched structure introduced using a specific amount of a branching agent to molecular-weight-increasing linking reaction with an aliphatic diol compound in the presence of a transesterification catalyst under the condition of a reduced pressure. The amount (A) of the branching agent used in adjusted on the basis of the correlation between the amount (A) of the branching agent used and the N value of the branched aromatic polycarbonate resin.
摘要:
Provided are a multilayer ZnO single crystal scintillator wherein the light emitting quantity is increased, and a method for manufacturing such scintillator. A multilayer body composed of ZnO semiconductor layers having different band gaps is manufactured, and a layer having a small band gap is made to have a thickness that permits ionization radiation, such as α rays and electronic rays, to enter the layer, thereby the light emitting quantity of the multilayer ZnO single crystal scintillator is greatly increased.