公开(公告)号：US07708831B2

公开(公告)日：2010-05-04

申请号：US12224500

申请日：2007-02-28

申请人： Hideyuki Sekiwa ,  Jun Kobayashi ,  Miyuki Miyamoto

发明人： Hideyuki Sekiwa ,  Jun Kobayashi ,  Miyuki Miyamoto

IPC分类号： C30B19/00 ,  C30B28/10 ,  C30B11/00

CPC分类号： H01L21/02554 ,  C30B9/12 ,  C30B15/00 ,  C30B19/02 ,  C30B29/16 ,  H01L21/0257 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/02634

摘要： A method for producing a ZnO single crystal by a liquid phase growth technique, comprising the steps of: mixing and melting ZnO as a solute and PbF2 and PbO as solvents; and putting a seed crystal or substrate into direct contact with the obtained melted solution, thereby growing a ZnO single crystal on the seed crystal or substrate.

摘要翻译： 一种通过液相生长技术制备ZnO单晶的方法，包括以下步骤：将ZnO作为溶质和PbF 2和PbO作为溶剂进行混合和熔融; 并将晶种或底物与所得熔融溶液直接接触，从而在晶种或晶体上生长ZnO单晶。

公开(公告)号：US20110024742A1

公开(公告)日：2011-02-03

申请号：US12934835

申请日：2009-03-18

申请人： Hideyuki Sekiwa ,  Jun Kobayashi ,  Miyuki Miyamoto ,  Naoki Ohashi ,  Isao Sakaguchi ,  Yoshiki Wada

发明人： Hideyuki Sekiwa ,  Jun Kobayashi ,  Miyuki Miyamoto ,  Naoki Ohashi ,  Isao Sakaguchi ,  Yoshiki Wada

IPC分类号： H01L29/22 ,  C30B15/00 ,  C30B15/04

CPC分类号： H01L21/02625 ,  C30B9/08 ,  C30B19/02 ,  C30B29/16 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02628

摘要： A ZnO single crystal can be grown on a seed crystal substrate using a liquid phase epitaxial growth method by mixing and melting ZnO as a solute and a solvent, bringing the crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. A self-supporting Mg-containing ZnO mixed single crystal wafer can be obtained as follows. A Mg-containing ZnO mixed single crystal is grown using a liquid phase epitaxial growth method by mixing and melting ZnO and MgO forming a solute and a solvent, then bringing a seed crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. Then, the self-supporting Mg-containing ZnO mixed single crystal wafer is obtained by removing the substrate by polishing or etching, and polishing or etching a surface, on the side of −c plane, of the single crystal grown by the liquid phase epitaxial growth method.

摘要翻译： 可以使用液相外延生长法在ZnO晶体基板上生长ZnO单晶，通过将ZnO作为溶质和溶剂进行混合和熔融，使晶体基板与所得熔体直接接触，并拉出晶种基板 连续或间歇地 可以如下获得自支撑Mg的ZnO混合单晶晶片。 使用液相外延生长法，通过混合并熔化形成溶质和溶剂的ZnO和MgO，然后使晶种基材与所得熔体直接接触，并拉出种子，生长含Mg的ZnO混合单晶 晶体基板连续或间歇地。 然后，通过抛光或蚀刻去除衬底，并且通过液相外延生长的单晶的-c面的表面进行抛光或蚀刻来获得自支撑Mg的ZnO混合单晶晶片 生长方式。

公开(公告)号：US20090044745A1

公开(公告)日：2009-02-19

申请号：US12224500

申请日：2007-02-28

申请人： Hideyuki Sekiwa ,  Jun Kobayashi ,  Miyuki Miyamoto

发明人： Hideyuki Sekiwa ,  Jun Kobayashi ,  Miyuki Miyamoto

IPC分类号： C30B15/10

CPC分类号： H01L21/02554 ,  C30B9/12 ,  C30B15/00 ,  C30B19/02 ,  C30B29/16 ,  H01L21/0257 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/02634

摘要： A method for producing a ZnO single crystal by a liquid phase growth technique, comprising the steps of: mixing and melting ZnO as a solute and PbF2 and PbO as solvents; and putting a seed crystal or substrate into direct contact with the obtained melted solution, thereby growing a ZnO single crystal on the seed crystal or substrate.

摘要翻译： 一种通过液相生长技术制备ZnO单晶的方法，包括以下步骤：将ZnO作为溶质和PbF 2和PbO作为溶剂进行混合和熔融; 并将晶种或底物与所得熔融溶液直接接触，从而在晶种或晶体上生长ZnO单晶。

公开(公告)号：US20120064314A1

公开(公告)日：2012-03-15

申请号：US13321229

申请日：2010-04-14

申请人： Hideyuki Sekiwa ,  Jun Kobayashi ,  Miyuki Miyamoto ,  Taichi Tokutake ,  Akira Yoshikawa ,  Takayuki Yanagida

发明人： Hideyuki Sekiwa ,  Jun Kobayashi ,  Miyuki Miyamoto ,  Taichi Tokutake ,  Akira Yoshikawa ,  Takayuki Yanagida

IPC分类号： B32B7/02 ,  C30B19/00

CPC分类号： C09K11/54 ,  C30B19/02 ,  C30B19/061 ,  C30B29/16 ,  C30B29/22 ,  G01T1/202 ,  Y10T428/24942

摘要： Provided are a multilayer ZnO single crystal scintillator wherein the light emitting quantity is increased, and a method for manufacturing such scintillator. A multilayer body composed of ZnO semiconductor layers having different band gaps is manufactured, and a layer having a small band gap is made to have a thickness that permits ionization radiation, such as α rays and electronic rays, to enter the layer, thereby the light emitting quantity of the multilayer ZnO single crystal scintillator is greatly increased.

摘要翻译： 提供了发光量增加的多层ZnO单晶闪烁体及其制造方法。 制造由具有不同带隙的ZnO半导体层构成的多层体，使具有小带隙的层具有允许诸如α射线和电子射线的电离辐射进入该层的厚度，从而使光 多层ZnO单晶闪烁体的发射量大大增加。