公开(公告)号：US5614731A

公开(公告)日：1997-03-25

申请号：US514124

申请日：1995-08-11

申请人： Shuichi Uchikoga ,  Nobuki Ibaraki ,  Kouji Suzuki ,  Takuya Shimano ,  Kaichi Fukuda

发明人： Shuichi Uchikoga ,  Nobuki Ibaraki ,  Kouji Suzuki ,  Takuya Shimano ,  Kaichi Fukuda

IPC分类号： H01L21/336 ,  H01L29/417 ,  H01L29/786 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/66765 ,  H01L29/41733 ,  H01L29/78633

摘要： A thin-film semiconductor element provided on a channel area with a channel protection layer, characterized by the fact that a source electrode layer and a drain electrode layer respectively have overlapping areas on the channel protection layer, the side walls of the source electrode layer and the drain electrode layer extend in the overlapping areas beyond the side wall of the channel protection layer in at least one direction of the width thereof, and the source electrode layer and the drain electrode layer possess points of overlap intersection with the semiconductor layer at the points of overlap intersection thereof with the channel protection layer. Owing to the construction described above, the leakage current generated by exposure to light can be decreased and the thin-film semiconductor element can be produced by a simple process of manufacture.

摘要翻译： 一种设置在具有沟道保护层的沟道区上的薄膜半导体元件，其特征在于，源电极层和漏电极层分别在沟道保护层上具有重叠区域，源电极层的侧壁和 漏极电极层在沟道保护层的侧壁的重叠区域的至少一个宽度方向上延伸，源电极层和漏电极层在点处具有与半导体层的重叠交叉点 与沟道保护层的重叠交叉。 由于上述结构，可以减少由于曝光而产生的漏电流，并且可以通过简单的制造工艺制造薄膜半导体元件。

公开(公告)号：US5920082A

公开(公告)日：1999-07-06

申请号：US729574

申请日：1996-10-11

申请人： Tomoko Kitazawa ,  Tetsuya Iizuka ,  Takuya Shimano

发明人： Tomoko Kitazawa ,  Tetsuya Iizuka ,  Takuya Shimano

IPC分类号： G02F1/1343 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/786

CPC分类号： G02F1/136227 ,  G02F1/133345 ,  G02F1/136213 ,  G02F2001/133357 ,  G02F2201/123

摘要： An aperture rate of an active matrix substrate using TFTs can be improved, a short circuit can be prevent from being caused between a pixel electrode and a signal line, or a display defectiveness due to a coupling capacitor can be prevented, and display definition can be improved. A pixel electrode patterned by a back surface exposure technique is formed on a different surface by the presence of an insulating protection film. A source electrode and the pixel electrode are connected to each other by a first contact electrode formed of a transparent conductive film to be connected to a first contact hole formed through the insulating protection film. Since a connecting portion between the source electrode and the pixel electrode through the contact hole and a connecting portion between the pixel electrode and an auxiliary capacitor electrode are transparent conductive films, an aperture rate is not reduced. The pixel electrode and the signal line are formed on the different surface by the presence of the insulating protection film. As a result, no short circuit occurs therebetween. The defectiveness of points caused by the short circuit can be prevented from being generated.

摘要翻译： 可以提高使用TFT的有源矩阵基板的开口率，可以防止在像素电极和信号线之间产生短路，或者可以防止由于耦合电容器引起的显示不良，并且显示定义可以 改进。 通过存在绝缘保护膜，在不同的表面上形成通过背面曝光技术图案化的像素电极。 源电极和像素电极通过由透明导电膜形成的第一接触电极彼此连接，以连接到通过绝缘保护膜形成的第一接触孔。 由于源电极和像素电极之间通过接触孔的连接部分和像素电极和辅助电容器电极之间的连接部分是透明导电膜，所以孔径率不会降低。 通过存在绝缘保护膜，在不同的表面上形成像素电极和信号线。 结果，它们之间不产生短路。 可以防止由短路引起的点的缺陷产生。