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公开(公告)号：US07754613B2
公开(公告)日：2010-07-13
申请号：US11459646
申请日：2006-07-25
IPC分类号： H01L21/311 , H01L21/461 , H01L21/302
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32449 , H01J37/32706 , H01J2237/334 , H01L21/30655
摘要： Etching and protective-film deposition operations E and D are in alternation repeatedly executed on a silicon substrate carried on a platform within a processing chamber. With gas inside the processing chamber having been exhausted to pump down the chamber interior, in the etching operation E, the substrate is etched by supplying etching gas into the chamber and converting it into plasma and applying a bias potential to the platform, and in the protective-film deposition operation D, a protective film is formed on the silicon substrate by supplying protective-film deposition gas into the processing chamber and converting it into plasma. When a predetermined time prior to the close of operations E and D (time intervals indicated by reference marks Ee and De) is reached, the supply of etching or protective-film deposition gas is halted, and the exhaust flow rate of gas exhausted from the chamber is made greater than that previously.
摘要翻译： 蚀刻和保护膜沉积操作E和D在处理室内的平台上承载的硅衬底上重复执行。 由于处理室内的气体已被排出以抽空腔室内部，所以在蚀刻操作E中，通过向腔室中提供蚀刻气体并将其转换成等离子体并向平台施加偏置电位来蚀刻衬底，并且在 保护膜沉积操作D，通过向处理室中提供保护膜沉积气体并将其转换成等离子体，在硅衬底上形成保护膜。 当达到操作结束E和D（由参考标记Ee和De指示的时间间隔）之前的预定时间时，停止供应蚀刻或保护膜沉积气体，并且从 室比以前更大。
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公开(公告)号：US20070023394A1
公开(公告)日：2007-02-01
申请号：US11459646
申请日：2006-07-25
IPC分类号： B44C1/22 , C23F1/00 , H01L21/302 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32449 , H01J37/32706 , H01J2237/334 , H01L21/30655
摘要： Etching and protective-film deposition operations E and D are in alternation repeatedly executed on a silicon substrate carried on a platform within a processing chamber. With gas inside the processing chamber having been exhausted to pump down the chamber interior, in the etching operation E, the substrate is etched by supplying etching gas into the chamber and converting it into plasma and applying a bias potential to the platform, and in the protective-film deposition operation D, a protective film is formed on the silicon substrate by supplying protective-film deposition gas into the processing chamber and converting it into plasma. When a predetermined time prior to the close of operations E and D (time intervals indicated by reference marks Ee and De) is reached, the supply of etching or protective-film deposition gas is halted, and the exhaust flow rate of gas exhausted from the chamber is made greater than that previously.
摘要翻译： 蚀刻和保护膜沉积操作E和D在处理室内的平台上承载的硅衬底上重复执行。 由于处理室内的气体已被排出以抽空腔室内部，所以在蚀刻操作E中，通过向腔室中提供蚀刻气体并将其转换成等离子体并向平台施加偏置电位来蚀刻衬底，并且在 保护膜沉积操作D，通过向处理室中提供保护膜沉积气体并将其转换成等离子体，在硅衬底上形成保护膜。 当达到操作结束E和D（由参考标记Ee和De指示的时间间隔）之前的预定时间时，停止供应蚀刻或保护膜沉积气体，并且从 室比以前更大。
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