公开(公告)号：US4841346A

公开(公告)日：1989-06-20

申请号：US28627

申请日：1987-03-20

申请人： Tatsuo Noguchi

发明人： Tatsuo Noguchi

IPC分类号： H01L29/49 ,  H01L29/78

CPC分类号： H01L29/7838 ,  H01L29/495 ,  H01L29/4975

摘要： A MOSFET utilizes a buried channel structure comprising a buried channel between a source electrode and a drain electrode. The device also comprises a gate electrode made of material whose Fermi level is located between a conduction band and a valency band of a semiconductor. An impurity concentration in the substrate is relatively high because of buried channel structure.

摘要翻译： MOSFET利用包括在源电极和漏电极之间的掩埋沟道的掩埋沟道结构。 该器件还包括由费米能级位于半导体的导带和价带之间的材料制成的栅电极。 由于埋入通道结构，衬底中的杂质浓度相对较高。

公开(公告)号：US5183432A

公开(公告)日：1993-02-02

申请号：US612498

申请日：1990-11-14

申请人： Tatsuo Noguchi

发明人： Tatsuo Noguchi

IPC分类号： A63H27/10 ,  B29C65/74

CPC分类号： B29C65/7441 ,  B29C65/02 ,  B29C66/244 ,  B29C66/246 ,  B29C66/43 ,  A63H2027/1025 ,  B29C65/04 ,  B29C65/08 ,  B29C65/18 ,  B29C66/71 ,  B29L2022/022 ,  Y10T156/1051

摘要： A floating body comprising a first swelling portion having a gas inlet port through which gas is introduced and a plurality of second swelling portions each being held in fluid communication with the first swelling portion. The first and second swelling portions are formed by folding a single multi-layer film to form a nonpleat portion corresponding to the first swelling portion and pleat portions corresponding to the second swelling portions and by sealing the folded multi-layer film along a continuous seal line which extends over both the pleat and nonpleat portions and forms the gas inlet port in the nonpleat portion.

摘要翻译： 一种浮体，包括具有引入气体的气体入口的第一膨胀部分和与第一膨胀部分流体连通的多个第二膨胀部分。 第一和第二膨胀部分通过折叠单个多层膜形成对应于第一膨胀部分的不饱和部分和对应于第二膨胀部分的褶皱部分，并且沿着连续的密封线密封折叠的多层膜 其在褶皱和不饱和部分上延伸并且形成不完全部分中的气体入口。

公开(公告)号：US5017254A

公开(公告)日：1991-05-21

申请号：US268477

申请日：1988-11-07

申请人： Tatsuo Noguchi

发明人： Tatsuo Noguchi

IPC分类号： A63H27/10 ,  B29C65/74

CPC分类号： B29C65/7441 ,  B29C65/02 ,  B29C66/242 ,  B29C66/246 ,  A63H2027/1025 ,  B29C65/04 ,  B29C65/08 ,  B29C65/20 ,  B29C65/38 ,  B29C66/71 ,  B29L2022/022 ,  Y10T156/1051 ,  Y10T156/108

摘要： A method for producing a floating body such as a balloon and the like which has a first swelling portion with a gas inlet port and a plurality of second swelling portions each communicating with the first swelling portion, comprising the steps of:folding a single multi-layer film having a sealing capability and pleat portions so that the nonpleat portion, correspond to the first swelling portion of the floating body is formed in the film and pleat portions corresponding to the plurality of second swelling portions;sealing the folded multi-layer film along a seal line which extends over both the pleat and nonpleat portions and forms the gas inlet port in the nonpleat portion to produce the first swelling portion and the plurality of second swelling portions; and cutting and removing material located externally of the sealed multi-layer film along a line substantially parallel to the seal line.

摘要翻译： 一种用于制造诸如气球等的浮体的方法，其具有第一膨胀部分，其具有气体入口和与第一膨胀部分连通的多个第二膨胀部分，包括以下步骤： 具有密封能力和褶皱部分的层膜，使得对应于浮体的第一膨胀部分的不饱和部分形成在对应于多个第二膨胀部分的膜和褶皱部分中; 沿着在褶皱和不饱和部分上延伸的密封线密封折叠的多层膜，并在不饱和部分中形成气体入口以产生第一膨胀部分和多个第二膨胀部分; 以及沿着基本上平行于所述密封线的线切割和去除所述密封的多层膜外部的材料。

公开(公告)号：US4960725A

公开(公告)日：1990-10-02

申请号：US222314

申请日：1988-07-19

申请人： Tatsuo Noguchi

发明人： Tatsuo Noguchi

IPC分类号： H01L21/8234 ,  H01L21/768 ,  H01L23/522 ,  H01L23/64 ,  H01L27/02 ,  H01L27/088 ,  H01L29/06

CPC分类号： H01L23/642 ,  H01L27/0251 ,  H01L29/0638 ,  H01L2924/0002

摘要： There is provided a semiconductor device which comprises device regions and isolation regions to isolate the device regions from each other on a semiconductor substrate, wherein field insulators are formed in the isolation regions and conduction layers for wiring are formed above the field insulators. An additional impurity buried layer having an opposite conductivity to the semiconductor substrate is formed under the field insulators. Therefore the first capacitance element is composed of the conductive layer, the impurity buried layer, and the field insulator therebetween. The second capacitance element is composed of the impurity buried layer, the semiconductor substrate, and a PN junction layer therebetween. Thus the first capacitance element and the second capacitance element are connected in series.

摘要翻译： 提供了一种半导体器件，其包括器件区域和隔离区域以在半导体衬底上彼此隔离器件区域，其中在绝缘区域中形成场绝缘体，并且在场绝缘体上形成用于布线的导电层。 在场绝缘体之下形成具有与半导体衬底相反的导电性的另外的杂质掩埋层。 因此，第一电容元件由导电层，杂质掩埋层和它们之间的场绝缘体构成。 第二电容元件由杂质掩埋层，半导体衬底和它们之间的PN结层组成。 因此，第一电容元件和第二电容元件串联连接。

公开(公告)号：US5190764A

公开(公告)日：1993-03-02

申请号：US920525

申请日：1992-07-28

申请人： Kaoru Chiba ,  Shinji Yonemura ,  Tatsuo Noguchi ,  Takuo Wada ,  Satoru Moriyama

发明人： Kaoru Chiba ,  Shinji Yonemura ,  Tatsuo Noguchi ,  Takuo Wada ,  Satoru Moriyama

IPC分类号： A01N25/26

CPC分类号： A01N25/26

摘要： A sustained release pesticide comprises solid pesticidal particles comprising a solid, pesticidally active ingredient, substantially the whole surface of the pesticidal particles being coated with a hydrophobic substance.

摘要翻译： PCT No.PCT / JP89 / 00231 Sec。 371日期：一九八九年十一月三日 102（e）日期1989年11月3日PCT 1989年3月3日PCT公布。 第WO89 / 07889号公报 日本9月8日，1989年。持续释放农药包括固体农药颗粒，其包含固体，杀虫活性成分，所述杀虫颗粒的整个表面基本上被疏水性物质涂覆。