公开(公告)号：US06495470B2

公开(公告)日：2002-12-17

申请号：US08580532

申请日：1995-12-29

申请人： S. M. Reza Sadjadi ,  Mansour Moinpour ,  Te Hua Lin ,  Farhad K. Moghadam

发明人： S. M. Reza Sadjadi ,  Mansour Moinpour ,  Te Hua Lin ,  Farhad K. Moghadam

IPC分类号： H01L21461

CPC分类号： H01L21/76804 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a contact opening between two conductive features over a semiconductor substrate. Oxide spacers are formed adjacent to the conductive features. A doped oxide layer is then deposited over the semiconductor substrate. Finally, the contact opening is etched through the doped oxide layer between the conductive features such that the oxide spacers are exposed within the contact opening.

摘要翻译： 一种在半导体衬底上形成两个导电特征之间的接触开口的方法。 形成与导电特征相邻的氧化物间隔物。 然后在半导体衬底上沉积掺杂的氧化物层。 最后，通过导电特征之间的掺杂氧化物层蚀刻接触开口，使得氧化物间隔物暴露在接触开口内。

公开(公告)号：US5883436A

公开(公告)日：1999-03-16

申请号：US802285

申请日：1997-02-20

申请人： S. M. Reza Sadjadi ,  Mansour Moinpour ,  Te Hua Lin ,  Farhad K. Moghadam

发明人： S. M. Reza Sadjadi ,  Mansour Moinpour ,  Te Hua Lin ,  Farhad K. Moghadam

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L29/34 ,  H01L23/48

CPC分类号： H01L21/76804 ,  H01L23/5226 ,  H01L2924/0002

摘要： A method of forming a contact opening between two conductive features over a semiconductor substrate. Oxide spacers are formed adjacent to the conductive features. A doped oxide layer is then deposited over the semiconductor substrate. Finally, the contact opening is etched through the doped oxide layer between the conductive features such that the oxide spacers are exposed within the contact opening.

公开(公告)号：US06653224B1

公开(公告)日：2003-11-25

申请号：US10032480

申请日：2001-12-27

申请人： Yehiel Gotkis ,  Rodney Kistler ,  Leonid Romm ,  Te Hua Lin

发明人： Yehiel Gotkis ,  Rodney Kistler ,  Leonid Romm ,  Te Hua Lin

IPC分类号： H01L214763

CPC分类号： H01L21/3212 ,  H01L21/76819 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/7684

摘要： Methods for fabricating semiconductor structures having LowK dielectric properties are provided. In one example, a copper dual damascene structure is fabricated in a LowK dielectric insulator including forming a capping film over the insulator before features are defined therein. After the copper is formed in the features, the copper overburden is removed using ultra-gentle CMP, and then the barrier is removed using a dry etch process. Following barrier removal, a second etch is performed to thin the capping film. The thinning is configured to reduce the thickness of the capping film without removal, and thereby reducing the K-value of the LowK dielectric structure.

摘要翻译： 提供了制造具有LowK介电特性的半导体结构的方法。 在一个示例中，铜双镶嵌结构制造在LowK电介质绝缘体中，包括在其上限定特征之前在绝缘体上形成覆盖膜。 在特征中形成铜之后，使用超柔和的CMP去除铜覆盖层，然后使用干蚀刻工艺去除阻挡层。 在去除屏障之后，进行第二次蚀刻以使封盖膜变薄。 该薄化被配置为在不去除的情况下减小封盖膜的厚度，从而降低LowK电介质结构的K值。