摘要:
Methods of fabricating semiconductor structures on a substrate, where the substrate has transistors formed thereon, are provided. One method includes forming interconnect metallization structures in a plurality of levels. The forming of the interconnect metallization structures includes depositing a sacrificial layer and performing a process to etch trenches, vias, and stubs into the sacrificial layer. The method further includes filling and planarizing the trenches, vias, and stubs that were etched and then etching away the sacrificial layer throughout the plurality of levels of the interconnect metallization structures. The etching leaving a voided interconnect metallization structure that is structurally supported by stubs that are non-electrically functional.
摘要:
Methods of fabricating semiconductor structures on a substrate, where the substrate has transistors formed thereon, are provided. One method includes forming interconnect metallization structures in a plurality of levels. The forming of the interconnect metallization structures includes depositing a sacrificial layer and performing a process to etch trenches, vias, and stubs into the sacrificial layer. The method further includes filling and planarizing the trenches, vias, and stubs that were etched and then etching away the sacrificial layer throughout the plurality of levels of the interconnect metallization structures. The etching leaving a voided interconnect metallization structure that is structurally supported by stubs that are non-electrically functional.
摘要:
Methods and apparatus for removing materials from microfeature workpieces. One embodiment of a subpad in accordance with the invention comprises a matrix having a first surface configured to support a polishing medium and a second surface opposite the first surface. The subpad in this embodiment further includes a hydro-control agent in the matrix. The hydro-control agent has a hydrophobicity that inhibits liquid from absorbing into the subpad. The hydro-control agent, for example, can be coupling agents that are generally hydrophobic, surfactants that are hydrophobic, or other agents that are compatible with the matrix and at least generally hydrophobic.
摘要:
A method for minimizing measuring spot size and noise during film thickness measurement is provided. The method initiates with locating a first eddy current sensor directed toward a first surface associated with a conductive film. The method includes locating a second eddy current sensor directed toward a second surface associated with the conductive film. The first and second eddy current sensors may share a common axis or be offset from each other. The method further includes alternating power supplied to the first eddy current sensor and the second eddy current sensor, such that the first eddy current sensor and the second eddy current sensor are powered one at a time. In one aspect of the invention, a delay time is incorporated between switching power between the first eddy current sensor and the second eddy current sensor. The method also includes calculating the film thickness measurement based on a combination of signals from the first eddy current sensor and the second eddy current sensor. An apparatus and a system are also provided.
摘要:
A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A cluster of sensors external to the CMP tool is included. The cluster of sensors is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The cluster of sensors provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.
摘要:
A method for converting a slope based detection task to a threshold based detection task is provided. The method initiates with defining an approximation equation for a set of points corresponding to values of a process being monitored. Then, an expected value at a current point of the process being monitored is predicted. Next, a difference between a measured value at the current point of the process being monitored and the corresponding expected value is calculated. Then, the difference is monitored for successive points to detect a deviation value between the measured value and the expected value. Next, a transition point for the process being monitored is identified based on the detection of the deviation value. A processing system configured to provide real time data for a slope based transition and a computer readable media are also provided.
摘要:
A semiconductor device is provided. The semiconductor device includes a substrate having transistor devices and a plurality of copper interconnect metallization lines and conductive vias. The plurality of copper interconnect metallization lines and conductive vias are defined in each of a plurality of interconnect levels of the semiconductor device such that the plurality of copper interconnect metallization lines and conductive vias are isolated from each other by an air dielectric. The semiconductor device further includes a plurality of supporting stubs each of which is configured to form a supporting column that extends through the plurality of interconnect levels of the semiconductor device.
摘要:
A method for detecting a thickness of a layer of a wafer to be processed is provided. The method includes defining a plurality of sensors configured to create a set of complementary sensors proximate the wafer. Further included in the method is distributing the plurality of sensors along a particular radius of the wafer such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.
摘要:
A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A cluster of sensors external to the CMP tool is included. The cluster of sensors is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The cluster of sensors provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.
摘要:
In chemical mechanical polishing, a wafer carrier plate is provided with a cavity for reception of a sensor positioned very close to a wafer to be polished. Energy resulting from contact between a polishing pad and an exposed surface of the wafer is transmitted only a very short distance to the sensor and is sensed by the sensor, providing data as to the nature of properties of the exposed surface of the wafer, and of transitions of those properties. Correlation methods provide graphs relating sensed energy to the surface properties, and to the transitions. The correlation graphs provide process status data for process control.