公开(公告)号：US08242503B2

公开(公告)日：2012-08-14

申请号：US13042861

申请日：2011-03-08

Applicant: Yu-Chung Liu ,  Te-Yu Lee

Inventor： Yu-Chung Liu ,  Te-Yu Lee

IPC: H01L33/00

CPC classification number: H01L29/78633 ,  H01L27/12 ,  H01L29/78645 ,  H01L29/78648

Abstract: A system for displaying images includes a multi-gate thin film transistor (TFT) device including an active layer, first and second gate structures, and first and second light-shielding layers. The active layer is disposed on a substrate in a pixel region. The first and second gate structures are disposed on the active layer. The first and second light-shielding layers are disposed between the substrate and the active layer. The active layer includes first and second source/drain regions and first and second channel regions. The first light-shielding layer corresponds to a first lightly doped region and laterally extends under at least a portion of the first channel region. The second light-shielding layer corresponds to the second lightly doped region and laterally extends under at least a portion of the second channel region.

Abstract translation: 用于显示图像的系统包括具有有源层，第一和第二栅极结构以及第一和第二屏蔽层的多栅极薄膜晶体管（TFT）器件。 有源层设置在像素区域中的衬底上。 第一和第二栅极结构设置在有源层上。 第一和第二遮光层设置在基板和有源层之间。 有源层包括第一和第二源/漏区以及第一和第二沟道区。 第一遮光层对应于第一轻掺杂区域，并且在第一沟道区域的至少一部分下横向延伸。 第二遮光层对应于第二轻掺杂区域，并且在第二沟道区域的至少一部分下横向延伸。

公开(公告)号：US08158986B2

公开(公告)日：2012-04-17

申请号：US12764005

申请日：2010-04-20

Applicant: Yu-Chung Liu ,  Te-Yu Lee ,  Mei-Ling Chang

Inventor： Yu-Chung Liu ,  Te-Yu Lee ,  Mei-Ling Chang

IPC: H01L21/00 ,  H01L29/04 ,  H01L29/10

CPC classification number: H01L27/1255 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3265

Abstract: A system for displaying images including a display panel and a fabrication method thereof are provided. The display panel includes a substrate having a first, second and third areas, a first patterned semiconductor layer disposed over the first area of the substrate, a first insulating layer covering the first patterned semiconductor layer and the first, the second and the third areas of the substrate, a second patterned semiconductor layer disposed on the first insulating layer of the first and the third areas respectively, a second insulating layer covering the second patterned semiconductor layer and the first insulating layer, and a patterned conductive layer disposed on the second insulating layer to form a first thin-film transistor at the first area and a second thin-film transistor at the third area.

Abstract translation: 提供了一种用于显示包括显示面板及其制造方法的图像的系统。 显示面板包括具有第一，第二和第三区域的衬底，设置在衬底的第一区域上的第一图案化半导体层，覆盖第一图案化半导体层的第一绝缘层和覆盖第一图案化半导体层的第一，第二和第三区域 基板，分别设置在第一和第三区域的第一绝缘层上的第二图案化半导体层，覆盖第二图案化半导体层和第一绝缘层的第二绝缘层和设置在第二绝缘层上的图案化导电层 以在第一区域形成第一薄膜晶体管，在第三区域形成第二薄膜晶体管。

公开(公告)号：US20100252833A1

公开(公告)日：2010-10-07

申请号：US12725545

申请日：2010-03-17

Applicant: Yu-Chung Liu ,  Te-Yu Lee ,  Mei-Ling Chang

Inventor： Yu-Chung Liu ,  Te-Yu Lee ,  Mei-Ling Chang

IPC: H01L33/16 ,  H01L21/336

CPC classification number: H01L27/12 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/3262

Abstract: A system for displaying images is provided. The system includes a thin film transistor (TFT) device comprising a substrate having a pixel region, a driving thin film transistor and a switching thin film transistor. The driving thin film transistor and the switching thin film transistor are disposed on the substrate and in the pixel region. The driving thin film transistor includes a polysilicon active layer and the switching thin film transistor includes an amorphous silicon active layer. A method for fabricating the system for displaying images including the TFT device is also disclosed.

Abstract translation: 提供了一种用于显示图像的系统。 该系统包括薄膜晶体管（TFT）器件，其包括具有像素区域的衬底，驱动薄膜晶体管和开关薄膜晶体管。 驱动薄膜晶体管和开关薄膜晶体管设置在基板上和像素区域中。 驱动薄膜晶体管包括多晶硅有源层，开关薄膜晶体管包括非晶硅有源层。 还公开了一种用于制造用于显示包括TFT器件的图像的系统的方法。

公开(公告)号：US20100181574A1

公开(公告)日：2010-07-22

申请号：US12651998

申请日：2010-01-04

Applicant: Yu-Chung Liu ,  Te-Yu Lee ,  Te-Chang Wan ,  Kuo-Chao Chen ,  Mei-Ling Chang

Inventor： Yu-Chung Liu ,  Te-Yu Lee ,  Te-Chang Wan ,  Kuo-Chao Chen ,  Mei-Ling Chang

IPC: H01L33/00 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1229 ,  H01L27/1248

Abstract: A system for displaying images. The system includes a thin film transistor (TFT) device including a first insulating layer covering a first region and a second region of a substrate. A first polysilicon active layer is disposed in the first region and between the substrate and the first insulating layer. A second polysilicon active layer is disposed on the first insulating layer in the second region. A polysilicon gate layer is disposed above the first polysilicon active layer. A second insulating layer covers the polysilicon gate layer and the second polysilicon active layer. A metal gate layer is disposed above the second polysilicon active layer. A method for fabricating the system for displaying images including the TFT device is also disclosed.

Abstract translation: 用于显示图像的系统。 该系统包括薄膜晶体管（TFT）器件，其包括覆盖衬底的第一区域和第二区域的第一绝缘层。 第一多晶硅有源层设置在第一区域中以及衬底和第一绝缘层之间。 第二多晶硅有源层设置在第二区域中的第一绝缘层上。 多晶硅栅极层设置在第一多晶硅有源层上方。 第二绝缘层覆盖多晶硅栅极层和第二多晶硅活性层。 金属栅极层设置在第二多晶硅有源层上方。 还公开了一种用于制造用于显示包括TFT器件的图像的系统的方法。

公开(公告)号：US08227808B2

公开(公告)日：2012-07-24

申请号：US12277041

申请日：2008-11-24

Applicant: Te-Chang Wan ,  Yu-Chung Liu ,  Te-Yu Lee

Inventor： Te-Chang Wan ,  Yu-Chung Liu ,  Te-Yu Lee

IPC: H01L27/108

CPC classification number: G09G3/3225 ,  G09G2300/0426 ,  G09G2300/0439 ,  H01L27/1237 ,  H01L27/3262 ,  H01L29/78621

Abstract: An organic light emitting diode (OLED) display and thin film transistor (TFT) manufacturing method thereof are disclosed. According to the present invention, poly-silicon layers for forming active areas of non-driving TFT (e.g. peripheral circuit TFT and switch TFT) and driving TFT used in the OLED display are respectively made by using standard laser crystallization method and non-laser crystallization method or low energy laser crystallization method. Therefore, the peripheral circuit TFT has excellent electrical performance such as high carrier mobility, while the OLED-driving TFT has good stability so that the resultant display can operate with improved luminance uniformity.

Abstract translation: 公开了一种有机发光二极管（OLED）显示器和薄膜晶体管（TFT）制造方法。 根据本发明，用于形成有源区的非驱动TFT（例如外围电路TFT和开关TFT）的多晶硅层和用于OLED显示器中的驱动TFT分别通过使用标准激光结晶法和非激光结晶 方法或低能激光结晶法。 因此，外围电路TFT具有优异的电性能，例如高载流子迁移率，而OLED驱动TFT具有良好的稳定性，使得所得显示器可以以改进的亮度均匀性工作。

公开(公告)号：US20110284851A1

公开(公告)日：2011-11-24

申请号：US13042861

申请日：2011-03-08

Applicant: Yu-Chung LIU ,  Te-Yu LEE

Inventor： Yu-Chung LIU ,  Te-Yu LEE

IPC: H01L33/16

CPC classification number: H01L29/78633 ,  H01L27/12 ,  H01L29/78645 ,  H01L29/78648

Abstract: A system for displaying images includes a multi-gate thin film transistor (TFT) device including an active layer, first and second gate structures, and first and second light-shielding layers. The active layer is disposed on a substrate in a pixel region. The first and second gate structures are disposed on the active layer. The first and second light-shielding layers are disposed between the substrate and the active layer. The active layer includes first and second source/drain regions and first and second channel regions. The first light-shielding layer corresponds to a first lightly doped region and laterally extends under at least a portion of the first channel region. The second light-shielding layer corresponds to the second lightly doped region and laterally extends under at least a portion of the second channel region.

Abstract translation: 用于显示图像的系统包括具有有源层，第一和第二栅极结构以及第一和第二屏蔽层的多栅极薄膜晶体管（TFT）器件。 有源层设置在像素区域中的衬底上。 第一和第二栅极结构设置在有源层上。 第一和第二遮光层设置在基板和有源层之间。 有源层包括第一和第二源/漏区以及第一和第二沟道区。 第一遮光层对应于第一轻掺杂区域，并且在第一沟道区域的至少一部分下横向延伸。 第二遮光层对应于第二轻掺杂区域，并且在第二沟道区域的至少一部分下横向延伸。

公开(公告)号：US20100271349A1

公开(公告)日：2010-10-28

申请号：US12715316

申请日：2010-03-01

Applicant: Yu-Chung Liu ,  Te-Yu Lee ,  Te-Chang Wan ,  Kuo-Chao Chen ,  Mei-Ling Chang

Inventor： Yu-Chung Liu ,  Te-Yu Lee ,  Te-Chang Wan ,  Kuo-Chao Chen ,  Mei-Ling Chang

IPC: G09G5/00 ,  H01L33/16

CPC classification number: H01L27/1251 ,  G09G3/3225 ,  H01L27/1229 ,  H01L27/3262

Abstract: A system for displaying images. The system includes a thin film transistor (TFT) device including a first gate layer disposed on a first region of a substrate and covered by a first insulating layer. A first polysilicon active layer is disposed on the first insulating layer and a second polysilicon layer is disposed on a second region of the substrate. A second insulating layer covers both of the first and second polysilicon gate layers. Second and third gate layers are respectively disposed on the second insulating layer above the first and second polysilicon active layers. A method for fabricating a system for displaying images including the TFT device is also disclosed.

Abstract translation: 用于显示图像的系统。 该系统包括薄膜晶体管（TFT）器件，其包括设置在衬底的第一区域上并被第一绝缘层覆盖的第一栅极层。 第一多晶硅有源层设置在第一绝缘层上，第二多晶硅层设置在衬底的第二区域上。 第二绝缘层覆盖第一和第二多晶硅栅极层。 第二和第三栅极层分别设置在第一和第二多晶硅有源层上方的第二绝缘层上。 还公开了一种用于制造用于显示包括TFT器件的图像的系统的方法。

公开(公告)号：US20130003006A1

公开(公告)日：2013-01-03

申请号：US13535249

申请日：2012-06-27

Applicant: Chun-Ming WANG ,  Hsixg-Ju SUNG ,  Te-Yu LEE

Inventor： Chun-Ming WANG ,  Hsixg-Ju SUNG ,  Te-Yu LEE

IPC: G02F1/1339

CPC classification number: G02F1/1339 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/1341 ,  G02F2001/133357 ,  G02F2202/02

Abstract: A system for displaying images including a display panel is provided. The display panel has a display area and a peripheral area. The display panel includes a metal layer disposed on a first substrate. A patterned planarization layer is disposed on the metal layer, having at least one opening corresponding to the peripheral area, wherein a portion of the metal layer is exposed through the opening. A second substrate is disposed opposite to the first substrate. A seal is disposed at the peripheral area and between the first and the second substrates, wherein the seal covers the metal layer through the opening of the patterned planarization layer.

公开(公告)号：US08183064B2

公开(公告)日：2012-05-22

申请号：US12715316

申请日：2010-03-01

Applicant: Yu-Chung Liu ,  Te-Yu Lee ,  Te-Chang Wan ,  Kuo-Chao Chen ,  Mei-Ling Chang

Inventor： Yu-Chung Liu ,  Te-Yu Lee ,  Te-Chang Wan ,  Kuo-Chao Chen ,  Mei-Ling Chang

IPC: H01L21/00 ,  H01L29/04 ,  H01L31/036 ,  G09G5/00

CPC classification number: H01L27/1251 ,  G09G3/3225 ,  H01L27/1229 ,  H01L27/3262

Abstract: A system for displaying images. The system includes a thin film transistor (TFT) device including a first gate layer disposed on a first region of a substrate and covered by a first insulating layer. A first polysilicon active layer is disposed on the first insulating layer and a second polysilicon layer is disposed on a second region of the substrate. A second insulating layer covers both of the first and second polysilicon gate layers. Second and third gate layers are respectively disposed on the second insulating layer above the first and second polysilicon active layers. A method for fabricating a system for displaying images including the TFT device is also disclosed.

Abstract translation: 用于显示图像的系统。 该系统包括薄膜晶体管（TFT）器件，其包括设置在衬底的第一区域上并被第一绝缘层覆盖的第一栅极层。 第一多晶硅有源层设置在第一绝缘层上，第二多晶硅层设置在衬底的第二区域上。 第二绝缘层覆盖第一和第二多晶硅栅极层。 第二和第三栅极层分别设置在第一和第二多晶硅有源层上方的第二绝缘层上。 还公开了一种用于制造用于显示包括TFT器件的图像的系统的方法。

公开(公告)号：US08158985B2

公开(公告)日：2012-04-17

申请号：US12651998

申请日：2010-01-04

Applicant: Yu-Chung Liu ,  Te-Yu Lee ,  Te-Chang Wan ,  Kuo-Chao Chen ,  Mei-Ling Chang

Inventor： Yu-Chung Liu ,  Te-Yu Lee ,  Te-Chang Wan ,  Kuo-Chao Chen ,  Mei-Ling Chang

IPC: H01L33/00 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1229 ,  H01L27/1248

Abstract: A system for displaying images. The system includes a thin film transistor (TFT) device including a first insulating layer covering a first region and a second region of a substrate. A first polysilicon active layer is disposed in the first region and between the substrate and the first insulating layer. A second polysilicon active layer is disposed on the first insulating layer in the second region. A polysilicon gate layer is disposed above the first polysilicon active layer. A second insulating layer covers the polysilicon gate layer and the second polysilicon active layer. A metal gate layer is disposed above the second polysilicon active layer. A method for fabricating the system for displaying images including the TFT device is also disclosed.

Abstract translation: 用于显示图像的系统。 该系统包括薄膜晶体管（TFT）器件，其包括覆盖衬底的第一区域和第二区域的第一绝缘层。 第一多晶硅有源层设置在第一区域中以及衬底和第一绝缘层之间。 第二多晶硅有源层设置在第二区域中的第一绝缘层上。 多晶硅栅极层设置在第一多晶硅有源层上方。 第二绝缘层覆盖多晶硅栅极层和第二多晶硅活性层。 金属栅极层设置在第二多晶硅有源层上方。 还公开了一种用于制造用于显示包括TFT器件的图像的系统的方法。