公开(公告)号：US4990625A

公开(公告)日：1991-02-05

申请号：US445930

申请日：1989-12-05

Applicant: Tetsuo Arita ,  Minoru Mabuchi ,  Shoji Umehara ,  Kiyoshi Sakai

Inventor： Tetsuo Arita ,  Minoru Mabuchi ,  Shoji Umehara ,  Kiyoshi Sakai

IPC: C07C249/16 ,  C07D209/86 ,  C09B26/02 ,  G03G5/06

CPC classification number: C07C249/16 ,  C07D209/86 ,  G03G5/0616

Abstract: A process for synthesizing an N,N-disubstituted hydrazone comprises carrying out nitrozation by adding an aqueous solution of sodium nitrite to a solution having one part by weight of an N,N-disubstituted amine dissolved in 3 to 30 parts by weight of an organic acid, then reducing the nitrozated product to an N,N-disubstituted hydrazine by adding a reducing agent to the mixture containing the nitrozated product, and thereafter adding to the mixture containing the N,N-disubstituted hydrazine a carbonyl compound of the formula: ##STR1## wherein A represents an aromatic hydrocarbon group or an aromatic heterocyclic group which may have a substituent, B represents a hydrogen atom, an alkyl group, an aryl group or an aromatic heterocyclic group, which may have a substituent, thereby performing condensation of the N,N-disubstituted hydrazine with the carbonyl compound.

Abstract translation: 合成N，N-二取代腙的方法包括通过将亚硝酸钠水溶液加入到溶解有3重量份的N，N-二取代胺的溶液中进行硝化，所述N，N-二取代胺溶解在3-30重量份的有机 然后通过向含有硝基化产物的混合物中加入还原剂将硝化产物还原成N，N-二取代的肼，然后向含有N，N-二取代肼的混合物中加入下式的羰基化合物： 其中A表示可以具有取代基的芳香族烃基或芳香族杂环基，B表示可以具有取代基的氢原子，烷基，芳基或芳香族杂环基，由此进行 N，N-二取代肼与羰基化合物。

公开(公告)号：US4097646A

公开(公告)日：1978-06-27

申请号：US605380

申请日：1975-08-18

Applicant: Makoto Kitahara ,  Shozo Ishikawa ,  Kazuharu Katagiri ,  Tetsuo Arita ,  Shoji Masubuchi

Inventor： Makoto Kitahara ,  Shozo Ishikawa ,  Kazuharu Katagiri ,  Tetsuo Arita ,  Shoji Masubuchi

IPC: G03G5/02 ,  B32B5/16

CPC classification number: G03G5/0208 ,  G03G5/0217 ,  Y10T428/25 ,  Y10T428/259 ,  Y10T428/2991 ,  Y10T428/31507 ,  Y10T428/31511 ,  Y10T428/31663 ,  Y10T428/31667 ,  Y10T428/31699 ,  Y10T428/31797 ,  Y10T428/31906 ,  Y10T428/31913 ,  Y10T428/31924 ,  Y10T428/31935

Abstract: An electrostatic recording material, such as a dielectric coated paper and a paper for transfer of an electrostatic image, having a dielectric layer comprising a copolymer which comprises about 15 to 70 mol% of methacrylic acid and about 85 to 30 mol% of a methacrylate or acrylate and which contains free carboxylic acid groups, and a process for producing the electrostatic recording material comprising coating a water-soluble or -emulsifiable ammonium or amine salt of the copolymer on a support and drying the coated support.

Abstract translation: 一种静电记录材料，例如介电涂布纸和用于转印静电图像的纸，其具有包含共聚物的介电层，该共聚物包含约15至70摩尔％的甲基丙烯酸和约85至30摩尔％的甲基丙烯酸酯或 丙烯酸酯，并且其含有游离羧酸基团，以及用于制备静电记录材料的方法，包括将共聚物的水溶性或可乳化的铵盐或胺盐涂覆在载体上并干燥涂覆的载体。

公开(公告)号：US4501808A

公开(公告)日：1985-02-26

申请号：US526533

申请日：1983-08-25

Applicant: Kiyoshi Sakai ,  Shozo Ishikawa ,  Tetsuo Arita ,  Minoru Mabuchi ,  Shoji Umehara

Inventor： Kiyoshi Sakai ,  Shozo Ishikawa ,  Tetsuo Arita ,  Minoru Mabuchi ,  Shoji Umehara

IPC: G03G5/06 ,  G11B7/244 ,  H01L31/0216 ,  H01L51/30 ,  G03G5/09

CPC classification number: H01L51/0052 ,  G03G5/0672 ,  G03G5/0674 ,  G11B7/244 ,  H01L31/02161 ,  H01L51/005 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0067 ,  H01L51/0074 ,  G11B7/245 ,  G11B7/252 ,  G11B7/2532 ,  G11B7/256 ,  G11B7/258 ,  G11B7/2585 ,  G11B7/259 ,  H01L27/307 ,  H01L51/0042 ,  Y10S430/146

Abstract: An organic film comprising at least one compound of the following formulae (1)-(5): ##STR1## wherein R.sub.11 and R.sub.13 each represent substituted or unsubstituted aryl, R.sub.12 represents substituted or unsubstituted arylene, and A.sup..crclbar. represents an anionic residue; ##STR2## wherein R.sub.21, R.sub.22, and R.sub.24 each represent substituted or unsubstituted aryl, R.sub.23 represents substituted or unsubstituted arylene, and A.sup..crclbar. represents an anionic residue; ##STR3## wherein R.sub.31, R.sub.33, and R.sub.35 each represent substituted or unsubstituted aryl, R.sub.32 and R.sub.34 each represent substituted or unsubstituted arylene, and A.sup..crclbar. represents an anionic residue; ##STR4## wherein R.sub.41 represents alkyl, substituted or unsubstituted phenyl, or substituted or unsubstituted styryl, R.sub.42 represents substituted or unsubstituted arylene, R.sub.43 represents substituted or unsubstituted aryl, and A.sup..crclbar. represents an anionic residue; and ##STR5## wherein R.sub.51 represents alkoxy, R.sub.52 represents alkyl, R.sub.53 represents substituted or unsubstituted arylene, R.sub.54 represents substituted or unsubstituted aryl, A.sup..crclbar. represents an anionic residue, and n represents an integer of 1 or 2.

Abstract translation: 包含至少一种下式（1） - （5）的化合物的有机膜：其中R11和R13各自表示取代或未取代的芳基，R12表示取代或未取代的亚芳基，A（ - ）表示 阴离子残基; （2）其中R21，R22和R24各自表示取代或未取代的芳基，R23表示取代或未取代的亚芳基，A（ - ）表示阴离子残基; （3）其中R 31，R 33和R 35各自表示取代或未取代的芳基，R 32和R 34各自表示取代或未取代的亚芳基，A（ - ）表示阴离子残基; （4）其中R41表示烷基，取代或未取代的苯基或取代或未取代的苯乙烯基，R42表示取代或未取代的亚芳基，R43表示取代或未取代的芳基，A（ - ）表示阴离子残基; （5）其中R51表示烷氧基，R52表示烷基，R53表示取代或未取代的亚芳基，R54表示取代或未取代的芳基，A（ - ）表示阴离子残基，n表示1或2的整数。