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1.发明授权公开(公告)号：US08207442B2
公开(公告)日：2012-06-26
申请号：US11737119
申请日：2007-04-18
申请人： Lawrence M. Woods , Joseph H. Armstrong , Rosine M. Ribelin , Thomas Duncan Barnard , Yukinari Harimoto , Hidekatsu Hatanaka , Maki Itoh , Dimitris Elias Katsoulis , Michitaka Suto , Bizhong Zhu , Nicole R. Anderson , Herschel Henry Reese
发明人： Lawrence M. Woods , Joseph H. Armstrong , Rosine M. Ribelin , Thomas Duncan Barnard , Yukinari Harimoto , Hidekatsu Hatanaka , Maki Itoh , Dimitris Elias Katsoulis , Michitaka Suto , Bizhong Zhu , Nicole R. Anderson , Herschel Henry Reese
IPC分类号： H01L31/00
CPC分类号： H01L31/0392 , H01L31/03921 , H01L31/03928 , H01L31/046 , H01L31/0463 , H01L31/0749 , Y02E10/541
摘要： In an embodiment, one reinforced substrate for use in a photovoltaic device includes a polymer base material and a reinforcing structure bonded with the base material. The reinforced substrate presents a surface in a condition that is made-ready for deposition of thin film layers of the photovoltaic device. A thin film photovoltaic device includes the reinforced substrate, a back contact layer formed on the surface of the reinforced substrate, and a solar absorber layer formed on the back contact layer. A plurality of thin film photovoltaic devices may be formed on a common reinforced substrate. A process of producing a reinforced substrate includes combining a fluid base material and a fiber reinforcing structure to form an impregnated fiber reinforcement. The impregnated fiber reinforcement is cured to form the reinforced substrate, and the reinforced substrate is annealed.
摘要翻译： 在一个实施例中，用于光伏器件的一个增强衬底包括聚合物基材和与基材结合的增强结构。 增强的基底呈现出一个表面，该表面被制备用于沉积光伏器件的薄膜层。 薄膜光伏器件包括增强衬底，形成在增强衬底的表面上的背接触层和形成在后接触层上的太阳能吸收层。 多个薄膜光伏器件可以形成在共同的增强衬底上。 制造增强基材的方法包括组合流体基材和纤维增强结构以形成浸渍的纤维增强材料。 浸渍的纤维增强材料被固化以形成增强的基底，并且加强的基底被退火。
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2.发明授权Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor 有权使用受控浓度的氧化硼蒸气生产碳化硅纤维的方法
公开(公告)号：US6129887A
公开(公告)日：2000-10-10
申请号：US140824
申请日：1998-08-26
IPC分类号： D01F9/10 , C04B35/571 , C04B35/622 , C04B40/00
CPC分类号： C04B35/62272 , C04B35/571
摘要： A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.
摘要翻译： 制造多晶碳化硅的方法包括在含有氧化硼蒸汽的环境中加热含有硅和碳的无定形陶瓷纤维。 通过含硼材料如碳化硼和二氧化碳等氧化剂的反应，原位产生氧化硼蒸汽，氧化硼蒸汽的量可以通过改变氧化剂的添加量和加入量来控制 代理商
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公开(公告)号：US3462800A
公开(公告)日：1969-08-26
申请号：US3462800D
申请日：1967-06-20
CPC分类号： B65H67/0428 , B65H2701/31
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5.发明申请Copper Indium Diselenide-Based Photovoltaic Device And Method Of Preparing The Same 审中-公开基于二硒化铜的光伏器件及其制备方法公开(公告)号：US20090084428A1
公开(公告)日：2009-04-02
申请号：US12297358
申请日：2007-04-18
申请人： Thomas Duncan Barnard , Yukinari Harimoto , Hidekatsu Hatanaka , Maki Itoh , Dimitris Elias Katsoulis , Michitaka Suto , Bizhong Zhu , Lawrence M. Woods , Joseph H. Armstrong , Rosine M. Ribelin
发明人： Thomas Duncan Barnard , Yukinari Harimoto , Hidekatsu Hatanaka , Maki Itoh , Dimitris Elias Katsoulis , Michitaka Suto , Bizhong Zhu , Lawrence M. Woods , Joseph H. Armstrong , Rosine M. Ribelin
IPC分类号： H01L31/042
CPC分类号： H01L31/0322 , C08G77/12 , C08G77/16 , C08G77/20 , C08L83/04 , H01L31/072 , H01L31/0749 , Y02E10/541 , C08L83/00
摘要： A copper indium diselenide (CIS)-based photovoltaic device includes a CIS-based solar absorber layer including copper, indium, and selenium. The CIS-based photovoltaic device further includes a substrate including a silicone layer formed from a silicone composition and a metal foil layer. The substrate, due to the presence of the silicone layer and the metal foil layer, is both flexible and sufficiently able to withstand annealing temperatures in excess of 500° C. to obtain maximum efficiency of the device.
摘要翻译： 基于铜铟锡（CIS）的光伏器件包括包含铜，铟和硒的基于CIS的太阳能吸收层。 所述基于CIS的光电装置还包括由硅氧烷组合物和金属箔层形成的硅氧烷层的基板。 由于存在硅树脂层和金属箔层，衬底既柔软又足以承受超过500℃的退火温度，以获得器件的最大效率。
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公开(公告)号：US5953331A
公开(公告)日：1999-09-14
申请号：US925876
申请日：1997-09-09
申请人： Thomas Duncan , Richard Dennis Gitlin , Thomas F. La Porta , Kazutaka Murakami , Krishan Kumar Sabnani , Anil S. Sawkar , David E. Smith
发明人： Thomas Duncan , Richard Dennis Gitlin , Thomas F. La Porta , Kazutaka Murakami , Krishan Kumar Sabnani , Anil S. Sawkar , David E. Smith
CPC分类号： H04W88/181
摘要： A telecommunications system is arranged to efficiently route digital information from a mobile network to a Public Switched Telephone Network (PSTN) and vice versa by interposing a packet network between the mobile network and PSTN so that digital information originating from the wireless network at a first data rate may be forwarded over the packet network at that rate and then sent over a direct connection from the packet network to the PSTN at a second data rate expected by the PSTN. In this way the conversion of the digital information from the first to the second data rate is performed only when needed, i.e., at the ATM switch connected to the PSTN.
摘要翻译： 电信系统被布置为通过在移动网络和PSTN之间插入分组网络来有效地将数字信息从移动网络路由到公共交换电话网（PSTN），反之亦然，使得以第一数据来自无线网络的数字信息 速率可以以该速率通过分组网络转发，然后以由PSTN预期的第二数据速率通过直接连接从分组网络发送到PSTN。 以这种方式，数字信息从第一数据速率到第二数据速率的转换仅在需要时进行，即在连接到PSTN的ATM交换机上进行。
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公开(公告)号：US5928978A
公开(公告)日：1999-07-27
申请号：US890878
申请日：1997-07-10
IPC分类号： C04B35/64 , C04B35/571 , C04B35/622 , D01F9/08 , D06M11/00 , D06M11/80 , D06M11/84 , D06M101/00
CPC分类号： C04B35/571 , C04B35/62272
摘要： This invention pertains to a method for production of polycrystalline ceramic fibers from silicon oxycarbide (SiCO) ceramic fibers wherein the method comprises heating an amorphous ceramic fiber containing silicon and carbon in an inert environment comprising a boron oxide and carbon monoxide at a temperature sufficient to convert the amorphous ceramic fiber to a polycrystalline ceramic fiber. By having carbon monoxide present during the heating of the ceramic fiber, it is possible to achieve higher production rates on a continuous process.
摘要翻译： 本发明涉及一种由碳氧化硅（SiCO）陶瓷纤维生产多晶陶瓷纤维的方法，其中该方法包括在包含氧化硼和一氧化碳的惰性环境中加热含有硅和碳的无定形陶瓷纤维，其温度足以转化 将无定形陶瓷纤维制成多晶陶瓷纤维。 通过在加热陶瓷纤维期间存在一氧化碳，可以在连续方法上实现更高的生产率。
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8.发明授权Preparation of substantially crystalline silicon carbide fibers from borosilazanes 失效从硼硅氮烷制备基本上结晶的碳化硅纤维
公开(公告)号：US5863848A
公开(公告)日：1999-01-26
申请号：US772384
申请日：1991-09-27
IPC分类号： C04B35/571 , C04B35/565
CPC分类号： C04B35/571
摘要： This invention relates to the preparation of thermally stable, substantially polycrystalline silicon carbide ceramic fibers using borosilazane resins. The method comprises spinning fibers from the resin, infusibilizing the spun fibers and pyrolyzing the spun fibers at a temperature greater than about 1700.degree. C.
摘要翻译： 本发明涉及使用硼硅氮烷树脂制备热稳定的，基本上多晶的碳化硅陶瓷纤维。 该方法包括从树脂中纺出纤维，将纺丝纤维熔化并在大于约1700℃的温度下热解纺丝纤维。
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公开(公告)号：US1422347A
公开(公告)日：1922-07-11
申请号：US34914320
申请日：1920-01-03
申请人： THOMAS DUNCAN
发明人： THOMAS DUNCAN
IPC分类号： A24F13/22
CPC分类号： A24F13/22
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公开(公告)号：US905724A
公开(公告)日：1908-12-01
申请号：US1908415515
申请日：1908-02-12
发明人： MACINDOE FRANKLIN
CPC分类号： B66B7/1269
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