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公开(公告)号：US08865259B2
公开(公告)日：2014-10-21
申请号：US13156465
申请日：2011-06-09
IPC分类号： H01L31/18 , H01L31/20 , C23C16/54 , C23C16/40 , H01L31/0749 , H01L31/032 , C23C16/30
CPC分类号： C23C16/54 , C23C16/306 , C23C16/407 , C23C16/545 , H01L31/0322 , H01L31/0749 , H01L31/18 , H01L31/206 , Y02E10/541 , Y02P70/521
摘要： Disclosed are an inline chemical vapor deposition method and system for fabricating a device. The method includes transporting a web or discrete substrate through a deposition chamber having a plurality of deposition modules. A buffer layer, a window layer and a transparent conductive layer are deposited onto the substrate during passage through a first deposition module, a second deposition module and a third deposition module, respectively. Advantageously, the steps for generating the buffer layer, window layer and transparent conductive layer are performed sequentially in a common vacuum environment of a single deposition chamber and the use of a conventional chemical bath deposition process to deposit the buffer layer is eliminated. The method is suitable for the manufacture of different types of devices including various types of solar cells such as copper indium gallium diselenide solar cells.
摘要翻译： 公开了一种用于制造装置的在线化学气相沉积方法和系统。 该方法包括通过具有多个沉积模块的沉积室输送幅材或离散基板。 在通过第一沉积模块，第二沉积模块和第三沉积模块的过程中，缓冲层，窗口层和透明导电层分别沉积到衬底上。 有利地，用于产生缓冲层，窗口层和透明导电层的步骤在单个沉积室的共同真空环境中顺序进行，并且消除了使用常规化学浴沉积工艺沉积缓冲层。 该方法适用于制造不同类型的器件，包括各种类型的太阳能电池，如铜铟镓二硒化物太阳能电池。
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公开(公告)号：US20120034734A1
公开(公告)日：2012-02-09
申请号：US13180693
申请日：2011-07-12
IPC分类号： H01L31/18
CPC分类号： H01L31/206 , H01L31/0322 , H01L31/0687 , Y02E10/541 , Y02E10/544 , Y02P70/521
摘要： Described are embodiments of methods for depositing a copper indium gallium diselenide (CIGS) film on a substrate, such as a web substrate or a discrete substrate. In various embodiments, an incremental layer of indium is deposited followed by deposition of a top incremental layer of copper gallium to create a multi-layer structure that is subsequently selenized. By capping the multi-layer structure with the copper gallium layer, the depletion of indium during the selenization of the multi-layer is reduced or eliminated. Additional multi-layers, each having a copper gallium cap layer, are formed and selenized to create the CIGS film. Optionally, the indium content and gallium content in each multi-layer are varied from the indium content and gallium content of one or more of the other multi-layers to achieve desired content gradients in the CIGS film.
摘要翻译： 描述了在诸如幅材衬底或离散衬底的衬底上沉积铜铟镓硒（CIGS）膜的方法的实施例。 在各种实施例中，沉积增量的铟层，随后沉积铜镓的顶部增量层以产生随后被硒化的多层结构。 通过用铜镓层覆盖多层结构，减少或消除了在多层硒化过程中铟的耗尽。 形成具有铜镓盖层的附加多层并进行硒化以产生CIGS膜。 任选地，每个多层中的铟含量和镓含量从一种或多种其它多层的铟含量和镓含量变化，以在CIGS膜中实现期望的内容梯度。
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公开(公告)号：US20120034733A1
公开(公告)日：2012-02-09
申请号：US13101538
申请日：2011-05-05
IPC分类号： H01L31/0272 , C23C16/06
CPC分类号： C23C14/5866 , C23C14/165 , C23C14/205 , C23C14/562 , H01L31/18
摘要： Described are a system and a method for depositing a thin film on a substrate. In some embodiments, the system includes a substrate transport system to transport a plurality of discrete substrates, such as glass substrates or wafers, along a closed path. The system also includes a metal deposition zone, a selenization zone and a cooling chamber each disposed on the closed path. During transport along the closed path, the metal deposition zone deposits a layer of a composite metal onto the discrete substrates and the selenization zone selenizes the layer of the composite metal. The cooling zone cools the discrete substrates prior to a subsequent pass through the metal deposition zone and the selenization zone.
摘要翻译： 描述了在衬底上沉积薄膜的系统和方法。 在一些实施例中，该系统包括沿封闭路径输送多个离散基板（例如玻璃基板或晶片）的基板输送系统。 该系统还包括金属沉积区，硒化区和每个设置在封闭路径上的冷却室。 在沿着封闭路径运输的过程中，金属沉积区将一层复合金属沉积在离散的基底上，硒化区将复合金属层的硒化。 在随后通过金属沉积区和硒化区之前，冷却区冷却离散的衬底。
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公开(公告)号：US20120031604A1
公开(公告)日：2012-02-09
申请号：US13173100
申请日：2011-06-30
IPC分类号： F28F7/00
CPC分类号： B01D53/002 , B01D2257/55 , B01D2257/60 , B01D2258/0216 , H01L31/0322 , H01L31/206 , Y02E10/541 , Y02P70/521
摘要： Described is a vapor trap that enables the capture of material from the condensate of a vapor. The vapor trap includes an inner module, outer module and cooling system. The inner module has a transport channel to pass a web substrate or discrete substrate, and to limit conductance of the vapor. Plenums extend from the transport channel to an outer surface of the inner module. The inner module is configured to be at a temperature that is greater than a condensation temperature of the vapor. The outer module includes collection surfaces disposed across from the outer ends of the plenums. The temperature of the collection surfaces is less that a condensation temperature of the vapor. In various embodiments, the vapor trap is a selenium trap that can be used, for example, in a copper indium gallium diselenide (CIGS) deposition system for fabrication of thin film solar cells and modules.
摘要翻译： 描述了一种能够从蒸汽冷凝物中捕获材料的蒸汽阱。 蒸汽疏水阀包括内部模块，外部模块和冷却系统。 内部模块具有用于通过网状基板或离散基板的输送通道，并且限制蒸气的电导。 整体从运输通道延伸到内部模块的外表面。 内部模块被配置成处于大于蒸气冷凝温度的温度。 外部模块包括从集气室的外端部横跨设置的收集表面。 收集表面的温度小于蒸气的冷凝温度。 在各种实施方案中，蒸气阱是硒阱，其可用于例如用于制造薄膜太阳能电池和模块的铜铟镓硒（CIGS）沉积系统。
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公开(公告)号：US20120034764A1
公开(公告)日：2012-02-09
申请号：US12850939
申请日：2010-08-05
CPC分类号： H01L31/18 , C23C14/165 , C23C14/205 , C23C14/568 , C23C14/5866 , H01L21/02568 , H01L21/02614 , H01L31/0322 , Y02E10/541
摘要： Described are an apparatus and a method for depositing a thin film on a web. The method includes depositing a first layer of a composite metal onto a web. A first selenium layer is deposited onto the first layer and the web is heated to selenize the first layer. Subsequently, a second layer of the composite metal is deposited onto the selenized first layer and a second selenium layer is deposited onto the second layer. The web is then heated to selenize the second layer. The composition of each composite metal layer can be varied to achieve desired bandgap gradients and other film properties. Segregation of gallium and indium is substantially reduced or eliminated because each incremental layer is selenized before the next incremental layer is deposited. The method can be implemented in production systems to deposit CIGS films on metal and plastic foils.
摘要翻译： 描述了一种在网上沉积薄膜的装置和方法。 该方法包括将第一层复合金属沉积到网上。 将第一硒层沉积到第一层上，并且加热纤维网以对第一层进行硒化。 随后，将复合金属的第二层沉积到硒化的第一层上，并将第二硒层沉积到第二层上。 然后将纤维网加热以对第二层进行硒化。 可以改变每个复合金属层的组成以实现期望的带隙梯度和其它膜性质。 镓和铟的分离显着减少或消除，因为在下一个增量层沉积之前每个增量层被硒化。 该方法可以在生产系统中实施以将CIGS膜沉积在金属和塑料箔上。
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公开(公告)号：US20110262628A1
公开(公告)日：2011-10-27
申请号：US13156465
申请日：2011-06-09
CPC分类号： C23C16/54 , C23C16/306 , C23C16/407 , C23C16/545 , H01L31/0322 , H01L31/0749 , H01L31/18 , H01L31/206 , Y02E10/541 , Y02P70/521
摘要： Disclosed are an inline chemical vapor deposition method and system for fabricating a device. The method includes transporting a web or discrete substrate through a deposition chamber having a plurality of deposition modules. A buffer layer, a window layer and a transparent conductive layer are deposited onto the substrate during passage through a first deposition module, a second deposition module and a third deposition module, respectively. Advantageously, the steps for generating the buffer layer, window layer and transparent conductive layer are performed sequentially in a common vacuum environment of a single deposition chamber and the use of a conventional chemical bath deposition process to deposit the buffer layer is eliminated. The method is suitable for the manufacture of different types of devices including various types of solar cells such as copper indium gallium diselenide solar cells.
摘要翻译： 公开了一种用于制造装置的在线化学气相沉积方法和系统。 该方法包括通过具有多个沉积模块的沉积室输送幅材或离散基板。 在通过第一沉积模块，第二沉积模块和第三沉积模块的过程中，缓冲层，窗口层和透明导电层分别沉积到衬底上。 有利地，用于产生缓冲层，窗口层和透明导电层的步骤在单个沉积室的共同真空环境中顺序进行，并且消除了使用常规化学浴沉积工艺沉积缓冲层。 该方法适用于制造不同类型的器件，包括各种类型的太阳能电池，如铜铟镓二硒化物太阳能电池。
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