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公开(公告)号：US4820906A
公开(公告)日：1989-04-11
申请号：US25306
申请日：1987-03-13
申请人： Timothy J. Stultz
发明人： Timothy J. Stultz
CPC分类号： H01J61/86
摘要： An long arc gas-discharge lamp for rapidly heating a semiconductor wafer. The spectral output of the lamp is specifically matched to the absorption characteristics of the particular semiconductor wafer being heating by choosing an appropriate gas or mixture of gases. The electrodes of the long arc lamp are separated by a distance greater than the largest dimension of the semiconductor wafer to insure that the entire wafer is illuminated at one time. In addition, the lamp has a high power density to raise the temperature of the semiconductor wafer to the required process temperature. Large diameter metal electrodes are used to conduct more heat from the ends of the lamp. The electrodes contain a low work function metal such as thorium oxide to increase the electron emission. The enclosing glass capillary has thin walls between the electrodes for improved heat dissipation. The glass capillary is cooled to carry the heat away from the lamp.
摘要翻译： 一种用于快速加热半导体晶片的长弧形气体放电灯。 通过选择合适的气体或气体混合物，灯的光谱输出特别匹配正在加热的特定半导体晶片的吸收特性。 长弧灯的电极被分离大于半导体晶片的最大尺寸的距离，以确保整个晶片被一次照射。 此外，灯具有高功率密度以将半导体晶片的温度升高到所需的工艺温度。 大直径金属电极用于从灯的端部传导更多的热量。 这些电极含有诸如氧化钍的低功函数金属以增加电子发射。 封闭的玻璃毛细管在电极之间具有薄壁，以改善散热。 玻璃毛细管被冷却，以将热量从灯泡中携带。
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公开(公告)号：US06899849B2
公开(公告)日：2005-05-31
申请号：US09916541
申请日：2001-07-27
CPC分类号： G01N21/552 , G01N21/05 , G01N21/39 , G01N21/7703 , G01N2021/0346 , G01N2021/7776 , Y10S436/805 , Y10S436/806
摘要： An integrated optical chip device for molecular diagnostics comprising a tunable laser cavity sensor chip using heterodyned detection at the juncture of a sensor laser and a reference laser, and including a microfluid chip to which the sensor chip is flip-chip bonded to form a sample chamber that includes exposed evanescent field material of the tunable laser cavity to which fluid to be diagnosed is directed.
摘要翻译： 一种用于分子诊断的集成光学芯片装置，包括在传感器激光器和参考激光器的接合处使用外差检测的可调谐激光腔传感器芯片，并且包括微流体芯片，传感器芯片被倒装芯片结合到其上以形成样品室 其包括要被诊断的流体所针对的可调谐激光腔的暴露的消逝场材料。
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公开(公告)号：US5047611A
公开(公告)日：1991-09-10
申请号：US499913
申请日：1990-03-23
申请人： Timothy J. Stultz
发明人： Timothy J. Stultz
IPC分类号： H01L21/316 , F27B17/00 , F27D99/00
CPC分类号： F27D99/0006 , F27B17/0025
摘要： A method for rapidly curing a film on a substrate by selective heating, causing it to cure from the inside out. This is accomplished by illuminating the sample with a light source having a peak wavelength which will be primarily absorbed by the underlying substrate and is transparent to the overlying film. Thus the substrate will be selectively heated first by direct absorption of the radiation, and the film to be cured will in turn be heated by conduction from the substrate. In this way, the film will be cured from the interior interface to the surface, or from the inside-out.
摘要翻译： 一种通过选择性加热快速固化基材上的膜的方法，使其从内向内固化。 这是通过用具有峰值波长的光源照射样品来实现的，所述峰值波长将主要被下面的基底吸收并且对于覆盖膜是透明的。 因此，首先通过辐射的直接吸收来选择性地加热衬底，并且待固化的膜又将通过从衬底的导电加热。 以这种方式，胶片将从内部界面固化到表面，或从内向外固化。
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公开(公告)号：US5073698A
公开(公告)日：1991-12-17
申请号：US498670
申请日：1990-03-23
申请人： Timothy J. Stultz
发明人： Timothy J. Stultz
IPC分类号： H01L21/00 , H01L21/20 , H01L21/26 , H01L21/268 , H01L21/336 , H01L29/78 , H01L29/786 , H01L31/04
CPC分类号： H01L21/67115 , H01L21/2022 , H01L21/268 , Y02E10/543
摘要： A method for selectively heating a film on a substrate. The film is provided with a different absorption characteristic for light than the absorption characteristic of the substrate. The specimen (combined film and substrate) is illuminated by light having a maximum intensity at a wavelength which will be substantially absorbed by the film and substantially not absorbed by the substrate.
摘要翻译： 一种用于选择性地加热衬底上的膜的方法。 该薄膜具有与基板的吸收特性不同的光吸收特性。 样品（组合的膜和基底）被基本上被膜吸收的基本上不被基底吸收的波长处具有最大强度的光照射。
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