Small dimension high-efficiency high-speed vertical-cavity surface-emitting lasers
    2.
    发明授权
    Small dimension high-efficiency high-speed vertical-cavity surface-emitting lasers 有权
    小尺寸高效率高速垂直腔表面发射激光器

    公开(公告)号:US07916768B2

    公开(公告)日:2011-03-29

    申请号:US12410388

    申请日:2009-03-24

    IPC分类号: H01S5/00

    摘要: A Vertical-Cavity Surface-Emitting Laser (VCSEL) is disclosed, comprising an optical cavity bounded by a top mirror and a bottom mirror, wherein the top mirror has multiple layers of alternating refractive index, of which the bottom three or more layers of the top mirror are deep oxidation layers having an increased oxidation length, a light emitting active region between the top mirror and the bottom mirror, and an aperture with tapered edges between the active region and the top mirror, wherein the aperture has a thickness, a taper length, an oxide aperture length, a taper angle, and an aperture opening diameter designed to reduce an optical mode's diameter without significantly increasing the optical mode's round trip scattering loss.

    摘要翻译: 公开了一种垂直腔表面发射激光器(VCSEL),其包括由顶部反射镜和底部反射镜限定的光学腔,其中顶部反射镜具有多层交替折射率,其中底层三层或更多层 上反射镜是具有增加的氧化长度的深氧化层,在上反射镜和底镜之间的发光有源区,以及在有源区和顶反射镜之间具有锥形边缘的孔,其中孔具有厚度,锥度 长度,氧化物孔径长度,锥角和孔径直径,其设计用于在不显着增加光学模式的往返散射损耗的情况下降低光学模式的直径。

    Increased lateral oxidation rate of aluminum indium arsenide
    3.
    发明授权
    Increased lateral oxidation rate of aluminum indium arsenide 失效
    增加砷化铟铝的侧向氧化率

    公开(公告)号:US06472695B1

    公开(公告)日:2002-10-29

    申请号:US09594838

    申请日:2000-06-15

    IPC分类号: H01L310304

    摘要: The present invention discloses a device and a method for producing an oxidizable digital alloy that is sufficiently strain-compensated to provide for substantially defect-free growth on indium phosphide. The device comprises a layer of semiconductor material, a first layer, and a second layer. The first layer is indium arsenide and is coupled to the layer of semiconductor material, wherein the first layer of indium arsenide is under a compressive strain by a lattice mismatch between the layer of semiconductor material and the first layer of indium arsenide. The second layer is aluminum arsenide and is coupled to the layer of indium arsenide, wherein the second layer of aluminum arsenide is under a tensile strain by a lattice mismatch between the second layer and the first layer. The first layer and the second layer comprise a digital alloy of aluminum indium arsenide, and create a quasi-strain-compensated substantially defect-free alloy on the layer of semiconductor material therein. A superlattice period of the first layer of indium arsenide and a second layer of aluminum arsenide is selected to allow an oxide of desired depth to be produced from the digital alloy.

    摘要翻译: 本发明公开了一种用于制造可氧化数字合金的装置和方法,其被充分应变补偿以在磷化铟上提供基本上无缺陷的生长。 该器件包括半导体材料层,第一层和第二层。 第一层是砷化铟并且耦合到半导体材料层,其中第一层砷化铟由于半导体材料层和第一层砷化铟之间的晶格失配而处于压缩应变之下。 第二层是砷化铝,并且与砷化铟层耦合,其中第二层砷化铝在第二层与第一层之间的晶格失配下处于拉伸应变之下。 第一层和第二层包括砷化铝铟的数字合金,并在其中的半导体材料层上产生准应变补偿的基本上无缺陷的合金。 选择第一层砷化铟的超晶格周期和第二层砷化铝,以允许从数字合金产生所需深度的氧化物。

    Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector
    4.
    发明授权
    Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector 有权
    直接耦合多模WDM光数据链路,采用单片集成多通道VCSEL和光电探测器

    公开(公告)号:US06195485B1

    公开(公告)日:2001-02-27

    申请号:US09425542

    申请日:1999-10-22

    IPC分类号: G02B630

    摘要: A low cost, high speed WDM optical link which employs a circular array of VCSEL emitters directly coupled to a multi-mode fiber through which multiple simultaneously optical transmissions are sent to an optical detector comprising a circular array of RCPD detectors receiving the multiple simultaneous transmissions. The emitters and detectors within each array are fabricated with a double-absorber design which avoids position sensitivity related to the cavity standing wave and eliminates the need for in-situ cavity-mode adjustment. In addition, a coupled-cavity structure is presented to achieve passbands with flat tops and steep sides to approach the ideal square-shape photoresponse and to ensure proper channel alignment.

    摘要翻译: 一种低成本,高速WDM光链路,其采用直接耦合到多模光纤的VCSEL发射器的圆形阵列,多模光纤通过多模光纤将多个同时光传输发送到包括接收多个同时传输的RCPD检测器的圆阵列的光检测器。 每个阵列中的发射器和检测器都采用双吸收器设计制造,避免了与腔体驻波相关的位置灵敏度,并消除了对原位腔模调整的需要。 此外,提供耦合腔结构以实现具有平坦顶部和陡峭侧面的通带以接近理想的正方形光响应并且确保正确的通道对准。

    Multi-section tunable laser with differing multi-element mirrors
    5.
    发明授权
    Multi-section tunable laser with differing multi-element mirrors 失效
    多段可调激光器,具有不同的多元镜

    公开(公告)号:US4896325A

    公开(公告)日:1990-01-23

    申请号:US235307

    申请日:1988-08-23

    申请人: Larry A. Coldren

    发明人: Larry A. Coldren

    IPC分类号: H01S5/0625 H01S5/12 H01S5/125

    摘要: An improvement for allowing selective tuning of the emitted beam over a broad bandwidth to a diode laser having an active section for creating a light beam by spontaneous emission over a bandwidth around some center frequency and for guiding and reflecting the light beam between a pair of mirrors bounding the active on respective ends thereof to create an emitted beam of laser light. The mirrors each have narrow, spaced reflective maxima with the spacing of the reflective maxima of respective ones of the mirrors being different whereby only one the reflective maxima of each of the mirrors can be in correspondence and thereby provide a low loss window at any time. The preferred mirrors each include a plurality of discontinuities to cause the narrow, spaced reflective maxima wherein the spacing of the discontinuities of one mirror is different from the spacing of the discontinuities of the other mirror so as to cause the wavelength spacing of the maxima to be different. Additionally, the preferred embodiment includes a vernier circuit operably connected to the mirrors for providing an electrical signal to the mirrors which will cause continuous tuning within a desired frequency band, an offset control circuit operably connected to the mirrors for providing a voltage signal to the mirrors which will shift the reflective maxima of the mirrors into alignment at a desired frequency mode, and a phase control circuit for adjusting the laser mode wavelength to be in correspondence with the low loss window.

    摘要翻译: 一种改进,用于允许在宽带宽上选择性地调谐发射的光束到具有有源部分的二极管激光器,该有源部分用于通过在一些中心频率周围的带宽上的自发发射产生光束,以及用于在一对反射镜之间引导和反射光束 在其端部上限制活性物质以产生发射的激光束。 这些反射镜各自具有窄的间隔的反射最大值,其中相应的反射镜的反射最大值的间隔是不同的,因此每个反射镜的反射最大值只有一个可以对应,从而在任何时间提供低损耗窗口。 优选的反射镜各自包括多个不连续性,以产生窄的间隔开的反射最大值,其中一个反射镜的不连续部分的间距不同于另一个反射镜的不连续部分的间距,以使最大值的波长间隔为 不同。 另外,优选实施例包括可操作地连接到反射镜的游标电路,用于向反射镜提供电信号,该电信号将在期望的频带内引起连续调谐;偏置控制电路,可操作地连接到反射镜,以向反射镜提供电压信号 这将使反射镜的反射最大值以期望的频率模式进行对准;以及相位控制电路,用于将激光模式波长调整为与低损耗窗口相对应。

    Method of preferentially etching optically flat mirror facets in
InGaAsP/InP heterostructures
    6.
    发明授权
    Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures 失效
    在InGaAsP / InP异质结构中优先蚀刻光学平面镜面的方法

    公开(公告)号:US4354898A

    公开(公告)日:1982-10-19

    申请号:US276942

    申请日:1981-06-24

    CPC分类号: H01L21/30617

    摘要: Highly reproducible, optically flat mirror facets are created by contacting a predetermined area of the InGaAsP/InP heterostructure system with a chemical etchant for a time period sufficient to expose a substantially vertical crystallographic surface throughout the entire heterostructure system. Contact of the exposed surface with HCl causes a preferred crystallographic plane to be exposed as an optically flat mirror facet.

    摘要翻译: 通过使InGaAsP / InP异质结构体系的预定区域与化学蚀刻剂接触足以暴露整个异质结构体系中基本上垂直的结晶表面的时间段而产生高度可重现的光学平面镜面。 暴露表面与HCl的接触导致优选的结晶平面作为光学平面镜面曝光。

    Surface wave resonator cascade
    7.
    发明授权
    Surface wave resonator cascade 失效
    表面波谐振器级联

    公开(公告)号:US4327340A

    公开(公告)日:1982-04-27

    申请号:US80086

    申请日:1979-09-28

    申请人: Larry A. Coldren

    发明人: Larry A. Coldren

    摘要: Grating resonators for surface acoustic waves or surface optical waves are coupled in cascade via a track changer external to the resonator cavities. At least one grating of each resonator is partially transmissive in the resonant band, allowing the interchange of energy therebetween via the track changer. The track changer is comprised of either two or three reflective racks angled such that the energy reflected therein propagates along zero-temperature-coefficient paths. The three-rack, three-bounce U-path filter used as a track changer minimizes resonant energy losses due to variations in reflected wave angles from their designed values.

    摘要翻译: 用于表面声波或表面光波的光栅谐振器通过谐振器腔外部的轨道变换器级联耦合。 每个谐振器的至少一个光栅在谐振带中是部分透射的,允许通过轨道变换器在其间交换能量。 轨道更换器由两个或三个反射架组成,其角度使得其中反射的能量沿着零温度系数路径传播。 用作轨道变换器的三机架三反弹U轨道滤波器可以将由于其设计值的反射波角的变化引起的谐振能量损失最小化。

    Tunable laser source with integrated optical modulator
    8.
    发明授权
    Tunable laser source with integrated optical modulator 有权
    具有集成光调制器的可调谐激光源

    公开(公告)号:US07342950B1

    公开(公告)日:2008-03-11

    申请号:US10049362

    申请日:2000-08-29

    IPC分类号: H01S5/00

    摘要: A tunable laser source (10) with an integrated optical modulator (20). The laser source (10) is a widely tunable semiconductor laser that is comprised of an active region on top of a thick low bandgap, waveguide layer (22), wherein both the waveguide layer (220) and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator (20) is integrated into the semiconductor laser (10), wherein the electro-absorption modulator (20) shares the waveguide layer (22) with the semiconductor laser.

    摘要翻译: 一种具有集成光调制器(20)的可调激光源(10)。 激光源(10)是广泛可调的半导体激光器,其包括在厚低带隙波导层(22)的顶部上的有源区域,其中波导层(220)和有源区域都在p 掺杂区域和n掺杂区域。 电吸收调制器(20)集成到半导体激光器(10)中,其中电吸收调制器(20)与半导体激光器共享波导层(22)。

    Tunable laser cavity sensor chip
    9.
    发明授权
    Tunable laser cavity sensor chip 失效
    可调谐激光腔传感器芯片

    公开(公告)号:US06767515B2

    公开(公告)日:2004-07-27

    申请号:US09886360

    申请日:2001-06-20

    申请人: Larry A. Coldren

    发明人: Larry A. Coldren

    IPC分类号: G01N3002

    摘要: An integrated optical chip device for molecular diagnostics comprising a tunable laser cavity sensor chip using heterodyned detection at the juncture of a sensor laser and a reference laser, the sensor laser including exposed evanescent field material.

    摘要翻译: 一种用于分子诊断的集成光学芯片装置,其包括在传感器激光器和参考激光器的接合处使用外差检测的可调谐激光腔传感器芯片,所述传感器激光器包括暴露的消逝场材料。