-
公开(公告)号：US09133566B2
公开(公告)日：2015-09-15
申请号：US12094857
申请日：2006-12-08
Applicant: Daniel James Twitchen , Grant Charles Summerton , Ian Friel , John Olaf Hansen , Keith Barry Guy , Michael Peter Gaukroger , Philip Maurice Martineau , Robert Charles Burns , Simon Craig Lawson , Timothy Patrick Gerard Addison
Inventor： Daniel James Twitchen , Grant Charles Summerton , Ian Friel , John Olaf Hansen , Keith Barry Guy , Michael Peter Gaukroger , Philip Maurice Martineau , Robert Charles Burns , Simon Craig Lawson , Timothy Patrick Gerard Addison
CPC classification number: C30B29/04 , C23C16/27 , C30B25/00 , C30B25/105 , C30B29/02
Abstract: The invention relates to a single crystal CVD diamond material, wherein the extended defect density as characterized by X-ray topography is less than 400/cm2 over an area of greater than 0.014 cm2. The invention further relates to a method for producing a CVD single crystal diamond material according to any preceding claim comprising the step of selecting a substrate on which to grow the CVD single crystal diamond, wherein the substrate has at least one of a density of extended defects as characterized by X-ray topography of less than 400/cm2 over an area greater than 0.014 cm2; an optical isotropy of less than 1×10-5 over a volume greater than 0.1 mm3; and a FWHM X-ray rocking curve width for the (004) reflection of less than 20 arc seconds.
Abstract translation: 本发明涉及单晶CVD金刚石材料，其中通过X射线形貌表征的扩展缺陷密度在大于0.014cm 2的面积上小于400 / cm 2。 本发明还涉及根据前述权利要求中任一项所述的CVD单晶金刚石材料的制造方法，该方法包括选择在其上生长所述CVD单晶金刚石的基板的步骤，其中所述基板具有至少一个扩展缺陷密度 其特征在于在大于0.014cm 2的面积上的小于400 / cm 2的X射线形貌; 在大于0.1mm 3的体积下的光学各向同性小于1×10-5; 以及（004）反射小于20弧秒的FWHM X射线摇摆曲线宽度。
-
公开(公告)号：US20090127506A1
公开(公告)日：2009-05-21
申请号：US12094857
申请日：2006-12-08
Applicant: Daniel James Twitchen , Grant Charles Summerton , Ian Friel , John Olaf Hansen , Keith Barry Guy , Michael Peter Gaukroger , Philip Maurice Martineau , Robert Charles Burns , Simon Craig Lawson , Timothy Patrick Gerard Addison
Inventor： Daniel James Twitchen , Grant Charles Summerton , Ian Friel , John Olaf Hansen , Keith Barry Guy , Michael Peter Gaukroger , Philip Maurice Martineau , Robert Charles Burns , Simon Craig Lawson , Timothy Patrick Gerard Addison
CPC classification number: C30B29/04 , C23C16/27 , C30B25/00 , C30B25/105 , C30B29/02
Abstract: The invention relates to a single crystal CVD diamond material, wherein the extended defect density as characterised by X-ray topography is less than 400/cm2 over an area of greater than 0.014 cm2. The invention further relates to a method for producing a CVD single crystal diamond material according to any preceding claim comprising the step of selecting a substrate on which to grow the CVD single crystal diamond, wherein the substrate has at least one of a density of extended defects as characterised by X-ray topography of less than 400/cm2 over an area greater than 0.014 cm2; an optical isotropy of less than 1×10-5 over a volume greater than 0.1 mm3; and a FWHM X-ray rocking curve width for the (004) reflection of less than 20 arc seconds.
Abstract translation: 本发明涉及单晶CVD金刚石材料，其中通过X射线形貌表征的扩展缺陷密度在大于0.014cm 2的面积上小于400 / cm 2。 本发明还涉及根据前述权利要求中任一项所述的CVD单晶金刚石材料的制造方法，该方法包括选择在其上生长所述CVD单晶金刚石的基板的步骤，其中所述基板具有至少一个扩展缺陷密度 其特征在于在大于0.014cm 2的面积上的小于400 / cm 2的X射线形貌; 在大于0.1mm 3的体积下的光学各向同性小于1×10-5; 以及（004）反射小于20弧秒的FWHM X射线摇摆曲线宽度。
-
公开(公告)号：US09061263B2
公开(公告)日：2015-06-23
申请号：US11721355
申请日：2005-12-09
Applicant: Grant Charles Summerton , John Olaf Hansen , Robert Charles Burns , Timothy Patrick Gerard Addison , Simon Craig Lawson , Keith Barry Guy , Michael Peter Gaukroger
Inventor： Grant Charles Summerton , John Olaf Hansen , Robert Charles Burns , Timothy Patrick Gerard Addison , Simon Craig Lawson , Keith Barry Guy , Michael Peter Gaukroger
CPC classification number: B01J3/062 , B01J2203/0655 , Y10T428/2982
Abstract: This invention relates to a method of improving the crystalline perfection of IIa diamond crystals by heating the grown diamond crystals at an elevated temperature and an elevated pressure. The invention extends to grown diamond material having a low extended defect density with low nitrogen concentration.
Abstract translation: 本发明涉及通过在升高的温度和升高的压力下加热生长的金刚石晶体来改善IIa金刚石晶体的晶体完整性的方法。 本发明延伸到具有低氮浓度的低扩展缺陷密度的生长金刚石材料。
-
公开(公告)号：US20090258229A1
公开(公告)日：2009-10-15
申请号：US11721355
申请日：2005-12-09
Applicant: Grant Charles Summerton , John Olaf Hansen , Robert Charles Burns , Timothy Patrick Gerard Addison , Simon Craig Lawson , Keith Barry Guy , Michael Peter Gaukroger
Inventor： Grant Charles Summerton , John Olaf Hansen , Robert Charles Burns , Timothy Patrick Gerard Addison , Simon Craig Lawson , Keith Barry Guy , Michael Peter Gaukroger
CPC classification number: B01J3/062 , B01J2203/0655 , Y10T428/2982
Abstract: This invention relates to a method of improving the crystalline perfection of IIa diamond crystals by heating the grown diamond crystals at an elevated temperature and an elevated pressure. The invention extends to grown diamond material having a low extended defect density with low nitrogen concentration.
Abstract translation: 本发明涉及通过在升高的温度和升高的压力下加热生长的金刚石晶体来改善IIa金刚石晶体的晶体完整性的方法。 本发明延伸到具有低氮浓度的低扩展缺陷密度的生长金刚石材料。
-
-
-
Search Results
4
records
(took 0.019 seconds)
