公开(公告)号：US20070230767A1

公开(公告)日：2007-10-04

申请号：US11628731

申请日：2005-07-11

Applicant: Seiichi Iwamatsu ,  Tomohiro Marui ,  Nobuaki Kawaguchi ,  Makoto Shinozaki

Inventor： Seiichi Iwamatsu ,  Tomohiro Marui ,  Nobuaki Kawaguchi ,  Makoto Shinozaki

IPC: G06K9/00

CPC classification number: A61B5/05 ,  A61B5/0507

Abstract: A method and device for extracting medically effective information by applying a millimeter-wave band electromagnetic wave to an organism and analyzing transmission, reflection and spontaneous radiation signals. The method and display comprise an acquiring step or means in which a database is so prepared in advance that from the transmission, reflection, and spontaneous electromagnetic wave data measured in a state that an organism is irradiated with an electromagnetic wave having wavelength components the wavelengths of which are 6 to 14 mm and a state that the organism is not irradiated, electromagnetic characteristics at the organism surface and in the organism is categorized and organized by actual condition of the organism constituent element, and the actual condition information on the organism constituent element of the subject is acquired according to the database information from the transmission, reflection, and spontaneous electromagnetic wave data measured in a state that the organism, the subject, is irradiated with a similar electromagnetic wave and a state that the organism is not irradiated; a step of associating the position information on the measurement portion of the subject with three-dimensional meridians and meridian points; and an image displaying step.

Abstract translation: 一种通过将毫米波段电磁波应用于生物体并分析透射，反射和自发辐射信号来提取医学有效信息的方法和装置。 该方法和显示器包括获取步骤或装置，其中数据库预先如此准备：从在发射，反射和自发电磁波数据中测量的状态下，生物被辐射的波长成分的波长成分的电磁波照射 其为6〜14mm，生物体不被照射的状态，生物体表面和生物体的电磁特性根据生物构成要素的实际条件分类和组织，并且关于生物体构成元素的实际条件信息 根据来自发射，反射和自发电磁波数据的数据库信息获取对象，该数据信息在生物体，受试者用相似的电磁波照射的状态和生物体未照射的状态下测量; 将被检体的测定部位的位置信息与三维子午线和子午点相关联的步骤; 和图像显示步骤。

公开(公告)号：US20060104869A1

公开(公告)日：2006-05-18

申请号：US10525467

申请日：2003-08-29

Applicant: Kazuhiro Chiba ,  Tomohiro Marui

Inventor： Kazuhiro Chiba ,  Tomohiro Marui

IPC: B01J19/00

CPC classification number: B01J19/0013 ,  C07K1/02 ,  C07K1/30

Abstract: (Problems) A reaction container (apparatus) with a high efficiency, which can overcome problems of common chemically processing apparatuses using a solvent set where the compatible state and the separated state are reversibly changeable depending on a temperature, i.e. problems of the apparatus disclosed in Japanese Patent Application 2002-198242, namely the separation over time and spatial separation between compatible state and separated state. (Means for Solving the Problems) A temperature distribution is formed inside a reaction container, such that the temperature of one (optional) partial region inside the reaction container is the temperature for making first and second solvent solutions at a compatible state or a higher temperature, while the temperature of the other partial region is the temperature for making the solutions at a separated state or a lower temperature. Additionally, a reaction-promoting energy such as light and electricity is fed to the part at the compatible state.

Abstract translation: （问题）具有高效率的反应容器（装置）能够克服使用溶剂组的常见化学处理装置的问题，其中兼容状态和分离状态根据温度而可逆地改变，即所公开的装置的问题 日本专利申请2002-198242，即随时间的分离和相容状态与分离状态之间的空间分离。 （解决问题的手段）在反应容器内形成温度分布，使得反应容器内的一个（任选的）部分区域的温度是使第一和第二溶剂溶液处于相容状态或更高温度的温度 而另一部分区域的温度是使溶液处于分离状态或较低温度的温度。 此外，在兼容状态下将诸如光和电的反应促进能量供给到该部件。

公开(公告)号：US20050166835A1

公开(公告)日：2005-08-04

申请号：US10509177

申请日：2003-04-07

Applicant: Akinori Koukitsu ,  Yoshinao Kumagai ,  Tomohiro Marui

Inventor： Akinori Koukitsu ,  Yoshinao Kumagai ,  Tomohiro Marui

IPC: C23C16/34 ,  C23C16/30 ,  C30B25/02 ,  C30B25/14 ,  H01L21/205 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B25/02 ,  C23C16/303 ,  C30B25/14 ,  C30B29/403 ,  Y10T117/10 ,  Y10T117/1016

Abstract: A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700° C. or lower to form a halide of Al. The method has allowed the suppression of the formation of aluminum chloride (AlCl) or aluminum bromide (AlBr) reacting violently with quartz, which is the material of a reaction vessel for the growth, resulting in the achievement of the vapor phase growth of an Al-containing III-V group compound semiconductor at a rate of 100 microns/hr or more, which has lead to the mass-production of a substrate and a semiconductor element having satisfactory resistance to adverse environment.

Abstract translation: 通过常规HVPE法生长含Al III-V族化合物半导体的晶体的方法，其特征在于它包括在700℃或更低的温度下使Al与卤化氢反应形成卤化物的步骤 的Al 该方法允许抑制氯化铝（AlCl）或溴化铝（AlBr）的形成，其与作为用于生长的反应容器的材料的石英剧烈反应，导致实现Al的气相生长 含有III-V族化合物半导体，其速率为100微米/小时或更高，这导致大量生产基板和具有令人满意的耐恶劣环境的半导体元件。

公开(公告)号：US5314249A

公开(公告)日：1994-05-24

申请号：US976414

申请日：1992-11-13

Applicant: Tomohiro Marui ,  Kazuo Arai

Inventor： Tomohiro Marui ,  Kazuo Arai

IPC: G01J5/00 ,  G01J5/60 ,  G01J5/02

CPC classification number: G01J5/60 ,  G01J2005/0074

Abstract: Radiated light with a specified wavelength from a material is detected and a first parameter corresponding to the emissivity ratio is obtained from the plurality of detection signals. Since the emissivity takes on different values according to the condition of the surface of the material, the first parameter changes depending on the surface condition of the material. There is a correlation between a physical value indicating a condition of the material surface and the first parameter. The correlation remains equivalent even if a second parameter corresponding to the physical value is used instead of the physical value itself (for example, an optical physical value such as reflectivity and absorptivity, the thickness of a film formed on the material surface, the surface roughness, and the degree of galvannealing). As an example of the parameter corresponding to the physical value, there is the logarithmic ratio between emissivities (ln .epsilon..sub.a /ln .epsilon..sub.b) corresponding to the temperature in the vicinity of the surface. Therefore, a second parameter can be obtained on the basis of the correlation and a physical value can be obtained. When the emissivity or logarithmic emissivity ratio is used as the second parameter, the temperature in the vicinity of the material surface can be obtained from the second parameter and the plurality of detection signals.

Abstract translation: 检测到来自材料的指定波长的辐射光，并从多个检测信号获得与发射率相对应的第一参数。 由于发射率根据材料表面的状况而具有不同的值，所以第一参数根据材料的表面状况而变化。 指示材料表面的状态的物理值与第一参数之间存在相关性。 即使使用与物理值对应的第二参数来代替物理值本身（例如，诸如反射率和吸收率的光学物理值，在材料表面上形成的膜的厚度，表面粗糙度 ，以及合金化退火的程度）。 作为对应于物理值的参数的示例，存在对应于表面附近的温度的发射率（lnεa / lnεb）之间的对数比。 因此，可以基于相关性获得第二参数并且可以获得物理值。 当使用发射率或对数发射率作为第二参数时，材料表面附近的温度可以从第二参数和多个检测信号获得。

公开(公告)号：US4762148A

公开(公告)日：1988-08-09

申请号：US45187

申请日：1987-05-01

Applicant: Tomohiro Marui ,  Masaaki Takarada ,  Yoshiaki Shimura ,  Minoru Mita ,  Kiyoshi Horii

Inventor： Tomohiro Marui ,  Masaaki Takarada ,  Yoshiaki Shimura ,  Minoru Mita ,  Kiyoshi Horii

IPC: B65G53/52 ,  B65G53/58 ,  F15D1/00 ,  F15C1/16 ,  F16L55/10

CPC classification number: F15D1/0015 ,  B65G53/526 ,  B65G53/58 ,  Y10S423/09 ,  Y10T137/2087

Abstract: A spiral gas stream is generated in a pipeline when a uniform flow of gas flowing in a cylinder having inner diameter larger than that of the pipeline is introduced through a funnelform reducer into the inlet of the pipeline and bringing the mean gas stream velocity in the pipeline faster than 20 meter per second. The uniform flow of gas is formed in the cylinder easily when outside low pressure gas is fed into the cylinder through a feed gas inlet pipe installed diagonally at the side of the cylinder apart from the bottom plate so as to make the flow line of the feed gas to cross the axis of the cylinder and inclined toward the bottom plate. When solid particles are introduced into the spiral gas stream zone, they are transported to the outlet of the pipeline. As the compressed gas layer is formed along the inside wall of the pipeline by the spiral motion of gas stream, solid particles don't contact directly with the inside wall of the pipeline and don't hurt it. As the center part of the cross section of the pipeline becomes very low pressure, especially along the axis of the pipeline, solid particles containing or accompanying volatile matters are desiccated or concentrated as a result of the evaporation of volatile matters while being transported in the pipeline. Solid particles deposited on the bottom of water can be dredged and dehydrated by the spiral gas stream transportation system. When solid particles transported by spiral gas stream in two or more pipelines are arranged to collide with mutually, pulverized fine solid particles are recovered. A chemical reaction which can not or hardly to proceed at normal temperature and pressure is promoted in a spiral gas stream zone.

Abstract translation: 当在具有大于管道内径的内径的气缸中流动的气体的均匀流动通过漏斗形减速器引入到管道的入口并使平均气流速度在管线中时，在管道中产生螺旋气流 速度超过20米/秒。 当外部低压气体通过沿着与底板分离的圆柱体侧对角地设置的进料气体入口管被供给到气缸中时，容易形成气体的均匀流动，以使进料的流动线 气体穿过气缸的轴线并向底板倾斜。 当固体颗粒被引入螺旋气流区时，它们被运送到管道的出口。 由于通过气流的螺旋运动沿着管道的内壁形成压缩气体层，固体颗粒不直接与管道的内壁接触，并且不会伤害它。 由于管道的横截面的中心部分变得非常低的压力，特别是沿着管道的轴线，由于在管道中运输时挥发物质的蒸发，含有或伴随挥发物质的固体颗粒被干燥或浓缩 。 沉积在水底部的固体颗粒可以通过螺旋气流输送系统进行疏浚和脱水。 当通过螺旋气流在两条或更多条管道中输送的固体颗粒被布置为相互碰撞时，回收粉碎的细固体颗粒。 在常压和高温下不能或几乎不能进行的化学反应在螺旋气流区促进。

公开(公告)号：US5499673A

公开(公告)日：1996-03-19

申请号：US322955

申请日：1994-10-13

Applicant: Nobuo Shiga ,  Tomohiro Marui ,  Kiyoshi Shibuya ,  Toru Sato ,  Michiharu Ozawa ,  Masao Yukumoto

Inventor： Nobuo Shiga ,  Tomohiro Marui ,  Kiyoshi Shibuya ,  Toru Sato ,  Michiharu Ozawa ,  Masao Yukumoto

IPC: B22D11/06

CPC classification number: B22D11/0694

Abstract: A continuous thin metal strip formed by quenching on a single quenching roll is separated from the quenching roll and conveyed along a fly path to a coiling system directly or via pinch rolls. The path along which the thin metal strip flies is stabilized by a jet of a fluid jetted from a slit and biased to flow along a convex curved surface, whereby the time until the strip is taken up or nipped by the pinch rolls is shortened.

Abstract translation: 通过在单个淬火辊上淬火而形成的连续薄金属条从淬火辊分离，并且沿着飞行路径直接或通过夹送辊被输送到卷取系统。 薄金属带飞行的路径通过从狭缝喷射的流体的射流被稳定，并被偏压成沿着凸曲面流动，由此直到带被卷取辊吸收或夹持的时间被缩短。

公开(公告)号：US5481112A

公开(公告)日：1996-01-02

申请号：US296168

申请日：1994-08-29

Applicant: Tomohiro Marui ,  Kazuo Arai

Inventor： Tomohiro Marui ,  Kazuo Arai

IPC: G01B11/06 ,  G01N21/35 ,  G01J5/10

CPC classification number: G01B11/0658

Abstract: A method and apparatus are disclosed for controlling a physical property such as deposited film thickness to a desired value of control in a high temperature process using a desired emissivity power ratio and an emissivity power ratio measured from detected radiation energy. The measured emissivity power ratio is obtained on-line from detection signals of radiation sensors. A desired value of control is converted to the desired emissivity power ratio using predetermined relationships established by theory or experiment. The desired emissivity power ratio and the measured emissivity power ratio are compared to achieve the desired value of control.

Abstract translation: 公开了一种方法和装置，用于使用期望的发射率功率比和从检测到的辐射能量测量的发射率功率比，在高温过程中将诸如沉积膜厚度的物理性质控制到期望的控制值。 测量的发射功率比是从辐射传感器的检测信号在线获得的。 使用由理论或实验建立的预定关系将期望的控制值转换为期望的发射功率比。 比较期望的发射功率比和测量的发射功率比以实现期望的控制值。

公开(公告)号：US5309372A

公开(公告)日：1994-05-03

申请号：US552517

申请日：1990-07-16

Applicant: Tomohiro Marui ,  Hideyo Funatsu

Inventor： Tomohiro Marui ,  Hideyo Funatsu

IPC: G06F17/50 ,  G06F15/60

CPC classification number: G06F17/5077

Abstract: A system and method for automatically and optimally determining a route to be wired in a Programmable Logic Device (PLD) are disclosed in which a plurality of load pins to be wired with a source pin are selected sequentially according to a shortest length of distance from the source pin to the respective load pins, a plurality of switching stations present midway through each route of paths are selected on the basis of coordinates of a center of gravity derived from the coordinates of the unwired load pins and distances to the respective load pins to be wired sequentially, and, thus, a line network constituted by the routes of the first and second paths is formed. Furthermore, the route is corrected by searching out any of problematic switching stations through which the path cannot be formed from among the switching stations present along the route so as to bypass the problematic switching station. If this correction proves impossible, a second correction is sought by searching the problematic switching station itself so as to bypass a wired path present within the problematic switching station. If this correction also fails, a third mode of correction is implemented in which a switching station adjacent the problematic switching station is utilized.

Abstract translation: 公开了一种用于自动和最佳地确定可编程逻辑器件（PLD）中布线的路由的系统和方法，其中，根据与源引脚的距离的最短距离，顺序地选择要与源引脚布线的多个负载引脚 源极引脚连接到相应的负载引脚，基于从未装载负载引脚的坐标和到相应负载引脚的距离导出的重心坐标来选择通过每个路径路径中途的多个切换站 因此，形成由第一和第二路径的路线构成的线路网络。 此外，通过沿着路线存在的切换站中搜索不能形成路径的任何有问题的切换站，以绕过有问题的交换站来校正路由。 如果这种校正证明是不可能的，则通过搜索有问题的交换台本身以绕过存在于有问题的交换站内的有线路径来寻求第二校正。 如果该校正也失败，则实施第三种校正模式，其中利用与有问题的切换站相邻的切换站。

公开(公告)号：US5253181A

公开(公告)日：1993-10-12

申请号：US513625

申请日：1990-04-24

Applicant: Tomohiro Marui ,  Yoshihiro Ishida ,  Hiroyuki Oka

Inventor： Tomohiro Marui ,  Yoshihiro Ishida ,  Hiroyuki Oka

IPC: G06F17/50 ,  G06F15/60

CPC classification number: G06F17/5027

Abstract: There is provided a programmable one-board computer comprising a system board including wirings, one or more of microprocessor chips disposed at the center of said system board, and a plurality of programmable logic devices (PLD) disposed to surround said one or more of the microprocessor chips. Each said PLD may include a memory for defining an internal circuit thereof or may substitute partly thereof for an external memory device, or said PLDs may be comprised of large scale PLDs as inner PLDs thereof and small scale PLDs as outer PLDs thereof. The programmable one-board computer can realize an actual circuit altered from a newly designed logic circuit and laid out on the same. The actual circuit laid on the same can be used for verification.

公开(公告)号：US07645340B2

公开(公告)日：2010-01-12

申请号：US10509177

申请日：2003-04-07

Applicant: Akinori Koukitu ,  Yoshinao Kumagai ,  Tomohiro Marui

Inventor： Akinori Koukitu ,  Yoshinao Kumagai ,  Tomohiro Marui

IPC: C30B25/00

CPC classification number: C30B25/02 ,  C23C16/303 ,  C30B25/14 ,  C30B29/403 ,  Y10T117/10 ,  Y10T117/1016

Abstract: A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700° C. or lower to form a halide of Al. The method has allowed the suppression of the formation of aluminum chloride (AlCl) or aluminum bromide (AlBr) reacting violently with quartz, which is the material of a reaction vessel for the growth, resulting in the achievement of the vapor phase growth of an Al-containing III-V group compound semiconductor at a rate of 100 microns/hr or more, which has lead to the mass-production of a substrate and a semiconductor element having satisfactory resistance to adverse environment.

Abstract translation: 通过常规HVPE法生长含Al III-V族化合物半导体的晶体的方法，其特征在于它包括在700℃或更低的温度下使Al与卤化氢反应形成卤化物的步骤 的Al 该方法允许抑制氯化铝（AlCl）或溴化铝（AlBr）的形成，其与作为用于生长的反应容器的材料的石英剧烈反应，导致实现Al的气相生长 含有III-V族化合物半导体，其速率为100微米/小时或更高，这导致大量生产基板和具有令人满意的耐恶劣环境的半导体元件。