公开(公告)号：US07449071B2

公开(公告)日：2008-11-11

申请号：US10903083

申请日：2004-07-30

申请人： Ravinder K. Aggarwal ,  Tony J. Keeton ,  Matthew G. Goodman

发明人： Ravinder K. Aggarwal ,  Tony J. Keeton ,  Matthew G. Goodman

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/68735 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/481 ,  H01L21/68742

摘要： A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer processing. The lift ring has a central aperture configured to closely surround the inner plug. When a wafer is to be loaded onto the wafer holder, the lift ring is elevated above the inner plug. The wafer is loaded onto the lift ring in the elevated position. Then, the lift ring is maintained in the elevated position for a time period sufficient to allow the wafer temperature to rise to a level that is sufficient to significantly reduce or even substantially prevent thermal shock to the wafer when the wafer is brought into contact with the inner plug. The lift ring is then lowered into surrounding engagement with the inner plug. This is the wafer processing position of the wafer holder.

摘要翻译： 用于在CVD处理室内支撑晶片的晶片保持器包括构造成支撑晶片的底部周边表面的可垂直移动的提升环，以及配置成在晶片处理期间支撑晶片的顶部平坦表面的内部插塞。 提升环具有构造成紧密围绕内塞的中心孔。 当将晶片装载到晶片保持器上时，升降环升高到内塞上方。 晶片在提升位置被装载到提升环上。 然后，提升环保持在升高位置一段足以允许晶片温度上升至足以显着降低甚至基本上防止晶片对晶片的热冲击的水平的时间，当晶片与 内塞 然后升降环下降到与内塞的周围接合。 这是晶片保持器的晶片加工位置。

公开(公告)号：US07033445B2

公开(公告)日：2006-04-25

申请号：US10327296

申请日：2002-12-20

申请人： Tony J. Keeton ,  Zachary L. Lutz

发明人： Tony J. Keeton ,  Zachary L. Lutz

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67103 ,  Y10T279/11 ,  Y10T279/23

摘要： Susceptor designs are provided for controlling damage to wafers, particularly during cold wafer drops-off on a hot susceptor. The designs include axisymmetric grid designs, such that thermal gradients are symmetrical in the circumferential (θ) direction and the same traversing any particular radial line. The grids are preferably arcuate and each have the same surface area. In one embodiment an outer zone is asymmetrically designed to induce predictable wafer curling in a saddle shape.

公开(公告)号：US06776849B2

公开(公告)日：2004-08-17

申请号：US10100308

申请日：2002-03-15

申请人： Ravinder K. Aggarwal ,  Tony J. Keeton ,  Matthew G. Goodman

发明人： Ravinder K. Aggarwal ,  Tony J. Keeton ,  Matthew G. Goodman

IPC分类号： H01L2100

CPC分类号： H01L21/68735 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/481 ,  H01L21/68742

摘要： A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer processing. The lift ring has a central aperture configured to closely surround the inner plug. When a wafer is to be loaded onto the wafer holder, the lift ring is elevated above the inner plug. The wafer is loaded onto the lift ring in the elevated position. Then, the lift ring is maintained in the elevated position for a time period sufficient to allow the wafer temperature to rise to a level that is sufficient to significantly reduce or even substantially prevent thermal shock to the wafer when the wafer is brought into contact with the inner plug. The lift ring is then lowered into surrounding engagement with the inner plug. This is the wafer processing position of the wafer holder.

摘要翻译： 用于在CVD处理室内支撑晶片的晶片保持器包括构造成支撑晶片的底部周边表面的可垂直移动的提升环，以及配置成在晶片处理期间支撑晶片的顶部平坦表面的内部插塞。 提升环具有构造成紧密围绕内塞的中心孔。 当将晶片装载到晶片保持器上时，升降环升高到内塞上方。 晶片在提升位置被装载到提升环上。 然后，提升环保持在升高位置一段足以允许晶片温度上升至足以显着降低甚至基本上防止晶片对晶片的热冲击的水平的时间，当晶片与 内塞 然后升降环下降到与内塞的周围接合。 这是晶片保持器的晶片加工位置。

公开(公告)号：US06861321B2

公开(公告)日：2005-03-01

申请号：US10118073

申请日：2002-04-05

申请人： Tony J. Keeton ,  Michael R. Stamp ,  Mark R. Hawkins

发明人： Tony J. Keeton ,  Michael R. Stamp ,  Mark R. Hawkins

IPC分类号： B65G49/07 ,  C23C16/46 ,  H01L21/00 ,  H01L21/677 ,  H01L21/683 ,  H01L21/336

CPC分类号： H01L21/67109 ,  H01L21/67115 ,  H01L21/67748

摘要： One or more of three different measures are taken to preheat a wafer before it is loaded into direct contact with a wafer holder, in order to provide optimal throughput while reducing the risk of thermal shock to the wafer. The first measure is to move the wafer holder to a raised position prior to inserting the wafer into the reaction chamber and holding the wafer above the wafer holder. The second measure is to provide an increased flow rate of a heat-conductive gas (such as Hs purge gas) through the chamber prior to inserting the wafer therein. The third measure is to provide a power bias to radiative heat elements (e.g., heat lamps) above the reaction chamber.

摘要翻译： 在将晶片加载到与晶片保持器直接接触之前，采用三种不同的措施来预热晶片，以便提供最佳的吞吐量，同时降低对晶片的热冲击的风险。 第一个措施是在将晶片插入反应室并将晶片保持在晶片保持器上方之前将晶片保持器移动到升高位置。 第二个措施是在将晶片插入其中之前提供通过腔室的导热气体（例如Hs吹扫气体）的增加的流速。 第三个措施是向反应室上方的辐射热元件（例如，加热灯）提供功率偏压。

公开(公告)号：US07070660B2

公开(公告)日：2006-07-04

申请号：US10139098

申请日：2002-05-03

申请人： Tony J. Keeton ,  Matthew G. Goodman

发明人： Tony J. Keeton ,  Matthew G. Goodman

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/4584 ,  C23C16/4585 ,  H01L21/67115 ,  H01L21/68735 ,  H01L21/6875

摘要： A wafer holder comprises a circular, disc-shaped main portion and a rib extending generally downward from a lower surface of the main portion. The rib encircles the vertical center axis of the wafer holder. The upper surface of the main portion has a wafer-receiving pocket defined by an inner pocket surface surrounded by an outer shoulder. The rib is closed to completely surround a vertical center axis of the main portion. The rib helps to prevent the main portion from inducing symmetric concavity during the manufacture of the wafer holder. In other words, the rib helps to maintain the flatness of the upper surface of the outer shoulder while the main portion is made symmetrically concave.

公开(公告)号：US06879777B2

公开(公告)日：2005-04-12

申请号：US10265519

申请日：2002-10-03

申请人： Matthew G. Goodman ,  Tony J Keeton ,  Ravinder Aggarwal ,  Mark Hawkins

发明人： Matthew G. Goodman ,  Tony J Keeton ,  Ravinder Aggarwal ,  Mark Hawkins

IPC分类号： H01L21/00 ,  F26B3/30

CPC分类号： H01L21/67115

摘要： An apparatus for processing a semiconductor substrate, including a process chamber having a plurality of walls and a substrate support to support the substrate within the process chamber. A radiative heat source is positioned outside the process chamber to heat the substrate through the walls when the substrate is positioned on the substrate support. In some embodiments, lenses are positioned between the heat source and the substrate to focus or diffuse radiation from the heat source and thereby selectively alter the radiation intensity incident on certain portions of the substrate. In other embodiments, diffusing surfaces are positioned between the heat source and the substrate to diffuse radiation from the heat source and thereby selectively reduce the radiation intensity incident on certain portions of the substrate.

摘要翻译： 一种用于处理半导体衬底的设备，包括具有多个壁的处理室和用于在处理室内支撑衬底的衬底支撑件。 当衬底定位在衬底支撑件上时，辐射热源位于处理室外部以通过壁加热衬底。 在一些实施例中，透镜位于热源和基板之间，以聚焦或散射来自热源的辐射，从而选择性地改变入射在基板的某些部分上的辐射强度。 在其它实施例中，扩散表面位于热源和衬底之间以扩散来自热源的辐射，从而选择性地降低入射到衬底的某些部分上的辐射强度。