公开(公告)号：US06277193B1

公开(公告)日：2001-08-21

申请号：US09319117

申请日：1999-06-02

申请人： Shinsuke Sadamitsu ,  Tooru Nagashima ,  Yasuo Koike ,  Masaharu Ninomiya ,  Takeshi Kii

发明人： Shinsuke Sadamitsu ,  Tooru Nagashima ,  Yasuo Koike ,  Masaharu Ninomiya ,  Takeshi Kii

IPC分类号： C30B2504

CPC分类号： H01L21/3225 ,  C30B29/06 ,  C30B33/02

摘要： A method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device by which a gettering ability can be given to an epitaxial wafer in which the formation of BMD is not able to be expected in both low- and high-temperature device manufacturing processes, with the manufacturing processes being lower and higher than 1,050° C. in temperature, and has a specific resistance of ≧10 m&OHgr;·cm. When this method is used, such BMD that is sufficient to obtain gettering can be formed in both the low- and high-temperature processes, with the manufacturing processes being lower and higher than 1,050° C. in temperature, even in the epitaxial wafer having a specific resistance of ≧10 m&OHgr;·cm by performing low-temperature heat treatment at 650˜900° C. before starting epitaxial film formation, by selecting the heat-treating time in accordance with the process temperature in the device manufacturing processes and heavy-metal contaminants which are mixed in during the device manufacturing processes can be gettered sufficiently. Therefore, the characteristic deterioration of a device can be prevented and the yield of the device can be improved.

摘要翻译： 一种制造半导体硅外延晶片和半导体器件的方法，通过该方法可以在其中在低温和高温器件制造工艺中不能期望形成BMD的外延晶片获得吸杂能力，其中制造 工艺温度低于1050℃，电阻率> 10mOMEGA.cm。 当使用这种方法时，可以在低温和高温工艺中形成足以获得吸气的这种BMD，其制造工艺在温度下低于1050℃，甚至在具有 通过在开始外延膜形成之前，在650〜900℃进行低温热处理，通过根据器件制造工艺中的工艺温度选择热处理时间和重的电阻值> 10mOMEGA.cm 在器件制造过程中混合的金属污染物可以充分吸收。 因此，可以防止器件的特性劣化，并且可以提高器件的产量。