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    INTEGRATED CIRCUIT AND METHOD OF FORMING AN INTEGRATED CIRCUIT
    3.
    发明申请
    INTEGRATED CIRCUIT AND METHOD OF FORMING AN INTEGRATED CIRCUIT 审中-公开
    集成电路和形成集成电路的方法

    公开(公告)号：US20130187159A1

    公开(公告)日：2013-07-25

    申请号：US13355787

    申请日：2012-01-23

    申请人： Torsten Helm ,  Marc Probst ,  Uwe Rudolph

    发明人： Torsten Helm ,  Marc Probst ,  Uwe Rudolph

    IPC分类号： H01L29/04 ,  H01L21/762 ,  H01L29/06

    CPC分类号： H01L21/743 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated circuit includes a first trench disposed in a semiconductor material, wherein a width of the first trench in an upper portion of the first trench adjacent to a surface of the semiconductor material is smaller than a width of the first trench in a lower portion of the first trench, the lower portion being disposed within the semiconductor material, each width being measured in a plane parallel to a surface of the semiconductor material, each width denoting a distance between inner faces of remaining semiconductor material portions or between outer faces of a filling disposed in the first trench, or between an inner face of a remaining semiconductor material portion and an outer face of a filling disposed in the first trench.

    摘要翻译： 集成电路包括设置在半导体材料中的第一沟槽，其中与第一沟槽的与半导体材料的表面相邻的第一沟槽的上部中的第一沟槽的宽度小于半导体材料的下部的第一沟槽的宽度 第一沟槽，下部设置在半导体材料内，每个宽度在与半导体材料的表面平行的平面中测量，每个宽度表示剩余的半导体材料部分的内表面之间或填充物的外表面之间的距离 设置在第一沟槽中，或者在剩余半导体材料部分的内表面和设置在第一沟槽中的填充物的外表面之间。