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    INTEGRATED CIRCUIT AND METHOD OF FORMING AN INTEGRATED CIRCUIT
    1.
    发明申请
    INTEGRATED CIRCUIT AND METHOD OF FORMING AN INTEGRATED CIRCUIT 审中-公开
    集成电路和形成集成电路的方法

    公开(公告)号：US20130187159A1

    公开(公告)日：2013-07-25

    申请号：US13355787

    申请日：2012-01-23

    申请人： Torsten Helm ,  Marc Probst ,  Uwe Rudolph

    发明人： Torsten Helm ,  Marc Probst ,  Uwe Rudolph

    IPC分类号： H01L29/04 ,  H01L21/762 ,  H01L29/06

    CPC分类号： H01L21/743 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated circuit includes a first trench disposed in a semiconductor material, wherein a width of the first trench in an upper portion of the first trench adjacent to a surface of the semiconductor material is smaller than a width of the first trench in a lower portion of the first trench, the lower portion being disposed within the semiconductor material, each width being measured in a plane parallel to a surface of the semiconductor material, each width denoting a distance between inner faces of remaining semiconductor material portions or between outer faces of a filling disposed in the first trench, or between an inner face of a remaining semiconductor material portion and an outer face of a filling disposed in the first trench.

    摘要翻译： 集成电路包括设置在半导体材料中的第一沟槽，其中与第一沟槽的与半导体材料的表面相邻的第一沟槽的上部中的第一沟槽的宽度小于半导体材料的下部的第一沟槽的宽度 第一沟槽，下部设置在半导体材料内，每个宽度在与半导体材料的表面平行的平面中测量，每个宽度表示剩余的半导体材料部分的内表面之间或填充物的外表面之间的距离 设置在第一沟槽中，或者在剩余半导体材料部分的内表面和设置在第一沟槽中的填充物的外表面之间。

    Method and device including transistor component having a field electrode
    2.
    发明授权
    Method and device including transistor component having a field electrode 有权
    包括具有场电极的晶体管部件的方法和装置

    公开(公告)号：US08072028B2

    公开(公告)日：2011-12-06

    申请号：US12605933

    申请日：2009-10-26

    申请人： Joachim Krumrey ,  Gerhard Noebauer ,  Martin Poelzl ,  Marc Probst

    发明人： Joachim Krumrey ,  Gerhard Noebauer ,  Martin Poelzl ,  Marc Probst

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4238 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7811

    摘要： A transistor component and method of forming a transistor component. One embodiment provides a semiconductor arrangement including a semiconductor body having a at least one first trench, a first field electrode arranged in the lower trench section of the at least one first trench and being insulated from the semiconductor body by a field electrode dielectric. A dielectric layer is formed on the first field electrode in the at least one first trench, including depositing a dielectric material on a first side of the semiconductor body and on the field plate at a higher deposition rate than on sidewalls of the at least one first trench.

    摘要翻译： 晶体管元件及形成晶体管元件的方法。 一个实施例提供一种半导体装置，其包括半导体本体，该半导体本体具有至少一个第一沟槽，第一场电极，布置在至少一个第一沟槽的下沟槽部分中，并且通过场电极电介质与半导体本体绝缘。 在所述至少一个第一沟槽中的所述第一场电极上形成电介质层，包括在所述半导体主体的第一侧和所述场板上以比所述至少一个第一沟槽的侧壁更高的沉积速率沉积介电材料 沟。

    METHOD AND DEVICE INCLUDING TRANSISTOR COMPONENT HAVING A FIELD ELECTRODE
    5.
    发明申请
    METHOD AND DEVICE INCLUDING TRANSISTOR COMPONENT HAVING A FIELD ELECTRODE 有权
    包括具有场电极的晶体管成分的方法和装置

    公开(公告)号：US20110095360A1

    公开(公告)日：2011-04-28

    申请号：US12605933

    申请日：2009-10-26

    申请人： Joachim Krumrey ,  Gerhard Noebauer ,  Martin Poelzl ,  Marc Probst

    发明人： Joachim Krumrey ,  Gerhard Noebauer ,  Martin Poelzl ,  Marc Probst

    IPC分类号： H01L27/06 ,  H01L21/8234 ,  H01L21/336

    CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4238 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7811

    摘要： A transistor component and method of forming a transistor component. One embodiment provides a semiconductor arrangement including a semiconductor body having a at least one first trench, a first field electrode arranged in the lower trench section of the at least one first trench and being insulated from the semiconductor body by a field electrode dielectric. A dielectric layer is formed on the first field electrode in the at least one first trench, including depositing a dielectric material on a first side of the semiconductor body and on the field plate at a higher deposition rate than on sidewalls of the at least one first trench.

    摘要翻译： 晶体管元件及形成晶体管元件的方法。 一个实施例提供一种半导体装置，其包括半导体本体，该半导体本体具有至少一个第一沟槽，第一场电极，布置在至少一个第一沟槽的下沟槽部分中，并且通过场电极电介质与半导体本体绝缘。 在所述至少一个第一沟槽中的所述第一场电极上形成电介质层，包括在所述半导体主体的第一侧和所述场板上以比所述至少一个第一沟槽的侧壁更高的沉积速率沉积介电材料 沟。

    METHOD AND DEVICE INCLUDING TRANSISTOR COMPONENT HAVING A FIELD ELECTRODE
    7.
    发明申请
    METHOD AND DEVICE INCLUDING TRANSISTOR COMPONENT HAVING A FIELD ELECTRODE 有权
    包括具有场电极的晶体管成分的方法和装置

    公开(公告)号：US20120040505A1

    公开(公告)日：2012-02-16

    申请号：US13281829

    申请日：2011-10-26

    申请人： Joachim Krumrey ,  Gerhard Noebauer ,  Martin Poelzl ,  Marc Probst

    发明人： Joachim Krumrey ,  Gerhard Noebauer ,  Martin Poelzl ,  Marc Probst

    IPC分类号： H01L21/336 ,  H01L21/28

    CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4238 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7811

    摘要： A transistor component and method of forming a transistor component. One embodiment provides a semiconductor arrangement including a semiconductor body having a at least one first trench, a first field electrode arranged in the lower trench section of the at least one first trench and being insulated from the semiconductor body by a field electrode dielectric. A dielectric layer is formed on the first field electrode in the at least one first trench, including depositing a dielectric material on a first side of the semiconductor body and on the field plate at a higher deposition rate than on sidewalls of the at least one first trench.

    摘要翻译： 晶体管元件及形成晶体管元件的方法。 一个实施例提供一种半导体装置，其包括半导体本体，该半导体本体具有至少一个第一沟槽，第一场电极，布置在至少一个第一沟槽的下沟槽部分中，并且通过场电极电介质与半导体本体绝缘。 在所述至少一个第一沟槽中的所述第一场电极上形成电介质层，包括在所述半导体主体的第一侧和所述场板上以比所述至少一个第一沟槽的侧壁更高的沉积速率沉积介电材料 沟。