公开(公告)号：US5621564A

公开(公告)日：1997-04-15

申请号：US314423

申请日：1994-09-28

申请人： Shigeki Kageyama ,  Katsuhiko Goto ,  Toru Takiguchi

发明人： Shigeki Kageyama ,  Katsuhiko Goto ,  Toru Takiguchi

IPC分类号： G02F1/015 ,  G02F1/017 ,  H01S5/00 ,  G02F1/03

CPC分类号： B82Y20/00 ,  G02F1/017 ,  G02F1/01708 ,  G02F2001/01766 ,  G02F2203/06

摘要： A semiconductor optical modulator includes an active region including a multi quantum well structure. Thereby, it is possible to absorb laser light having two polarization wave modes to a high degree as well as increase the number of quantum wells without fracturing the crystal, thereby providing a modulator having no polarization plane dependency and an increased extinction ratio. Further, a plurality of electrodes, each having an aperture, are provided at an upper surface and an electrode having the same number of apertures as on the upper surface is provided at a lower surface opposite the other electrodes. Multiple laser light beams incident from the apertures at the upper surface are respectively modulated and output from the apertures at the opposing lower surface. Therefore, in the active region, laser light beams including both TE and TM modes are absorbed or transmitted by the modulator without dependency on their respective polarization planes.

摘要翻译： 半导体光调制器包括包括多量子阱结构的有源区。 因此，可以高度吸收具有两个极化波模式的激光，并且可以增加量子阱的数量而不会破坏晶体，从而提供没有偏振面依赖性和增加的消光比的调制器。 此外，在上表面设置多个具有孔径的电极，并且在与其他电极相对的下表面上设置具有与上表面相同数量的孔的电极。 从上表面的孔入射的多个激光束分别被调制并从相对的下表面处的孔输出。 因此，在有源区域中，包括TE和TM模式的激光束被调制器吸收或传输，而不依赖于它们各自的偏振面。

公开(公告)号：US07855096B2

公开(公告)日：2010-12-21

申请号：US12034195

申请日：2008-02-20

申请人： Chikara Watatani ,  Toru Takiguchi

发明人： Chikara Watatani ,  Toru Takiguchi

IPC分类号： H01L21/00

CPC分类号： H01S5/227 ,  H01S5/2086 ,  H01S5/221 ,  H01S5/2272 ,  H01S5/2275

摘要： A semiconductor film is formed on a GaAs substrate (semiconductor substrate). An SiO2 film (insulating film) is formed on the semiconductor film, and the SiO2 film is patterned. The semiconductor film is etched using the SiO2 film as a mask to form a mesa structure. The surface of the SiO2 film is treated by ashing, using SF6 gas (fluorine-containing gas), to terminate the surface of the SiO2 film with fluorine. The mesa structure is selectively buried with a III-V compound semiconductor film, using the SiO2 film having the surface that has been terminated by fluorine, as a mask.

摘要翻译： 在GaAs衬底（半导体衬底）上形成半导体膜。 在半导体膜上形成SiO 2膜（绝缘膜），对SiO 2膜进行图案化。 使用SiO 2膜作为掩模蚀刻半导体膜以形成台面结构。 用SF6气体（含氟气体）通过灰化处理SiO 2膜的表面，用氟终止SiO 2膜的表面。 使用具有由氟终止的表面的SiO 2膜作为掩模，用III-V族化合物半导体膜选择性地掩埋台面结构。

公开(公告)号：US20090087966A1

公开(公告)日：2009-04-02

申请号：US12034195

申请日：2008-02-20

申请人： Chikara Watatani ,  Toru Takiguchi

发明人： Chikara Watatani ,  Toru Takiguchi

IPC分类号： H01L21/36

CPC分类号： H01S5/227 ,  H01S5/2086 ,  H01S5/221 ,  H01S5/2272 ,  H01S5/2275

摘要： A semiconductor film is formed on a GaAs substrate (semiconductor substrate). An SiO2 film (insulating film) is formed on the semiconductor film, and the SiO2 film is patterned. The semiconductor film is etched using the SiO2 film as a mask to form a mesa structure. The surface of the SiO2 film is treated by ashing, using SF6 gas (fluorine-containing gas), to terminate the surface of the SiO2 film with fluorine. The mesa structure is selectively buried with a III-V compound semiconductor film, using the SiO2 film having the surface that has been terminated by fluorine, as a mask.

摘要翻译： 在GaAs衬底（半导体衬底）上形成半导体膜。 在半导体膜上形成SiO 2膜（绝缘膜），对SiO 2膜进行图案化。 使用SiO 2膜作为掩模蚀刻半导体膜以形成台面结构。 用SF6气体（含氟气体）通过灰化处理SiO 2膜的表面，用氟终止SiO 2膜的表面。 使用具有由氟终止的表面的SiO 2膜作为掩模，用III-V族化合物半导体膜选择性地掩埋台面结构。