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    SEMICONDUCTOR LASER
    1.
    发明申请
    SEMICONDUCTOR LASER 审中-公开

    公开(公告)号：US20190013649A1

    公开(公告)日：2019-01-10

    申请号：US15752442

    申请日：2016-09-27

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Clemens Vierheilig ,  Andreas Löffler

    IPC: H01S5/323 ,  H01S5/028 ,  H01S5/10 ,  H01S5/22

    CPC classification number: H01S5/323 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/16 ,  H01S5/162 ,  H01S5/166 ,  H01S5/22 ,  H01S5/221

    Abstract: A semiconductor laser includes a semiconductor layer sequence having an n-conducting n-region, a p-conducting p-region and an intermediate active zone, an electrically conductive p-contact layer that impresses current directly into the p-region and is made of a transparent conductive oxide, and an electrically conductive and metallic p-contact structure located directly on the p-contact layer, wherein the semiconductor layer sequence includes two facets forming resonator end faces for the laser radiation, in at least one current-protection region directly on at least one of the facets a current impression into the p-region is suppressed, the p-contact structure terminates flush with the associated facet so that the p-contact structure does not protrude beyond the associated facet and vice versa, and the p-contact layer is removed from at least one of the current-protection regions and in this current-protection region the p-contact structure is in direct contact with the p-region over the whole area.

    Semiconductor laser device and manufacturing method thereof
    3.
    发明授权
    Semiconductor laser device and manufacturing method thereof 有权
    半导体激光器件及其制造方法

    公开(公告)号：US09564738B2

    公开(公告)日：2017-02-07

    申请号：US14932010

    申请日：2015-11-04

    Applicant: ROHM CO., LTD.

    Inventor： Yoshito Nishioka ,  Yoichi Mugino ,  Tsuguki Noma

    IPC: H01S5/343 ,  B82Y20/00 ,  H01S5/34 ,  G11B5/00 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32

    CPC classification number: H01S5/3434 ,  B82Y20/00 ,  G11B2005/0021 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3404 ,  H01S5/34313 ,  H01S5/34326 ,  H01S2301/145 ,  H01S2301/173

    Abstract: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.

    Abstract translation: 半导体激光器件包括n型覆盖层，第一p型覆盖层和脊条。 该器件还包括插入在n型覆盖层和第一p型覆盖层之间的有源层，以及形成在脊条的侧表面上的电流阻挡层。 该器件的脊条包括在与n型覆盖层相对的第一p型覆盖层的相对表面上形成为脊条形状的第二p型覆盖层。 形成脊条，使得第二p型覆盖层的表面的宽度的第一脊宽度与第一p型覆盖层位于同一侧，第二脊宽度作为第一p型覆盖层的表面宽度 第二p型覆盖层存在于与第一p型覆盖层相反的一侧。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09379524B2

    公开(公告)日：2016-06-28

    申请号：US14680678

    申请日：2015-04-07

    Applicant: Renesas Electronics Corporation

    Inventor： Ryuji Kobayashi ,  Masahide Kobayashi

    IPC: H01S5/343 ,  H01S5/22 ,  H01S5/32 ,  H01S5/34

    CPC classification number: H01S5/34333 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/22 ,  H01S5/221 ,  H01S5/2216 ,  H01S5/321 ,  H01S5/3407

    Abstract: The characteristics of a semiconductor laser are improved. In a semiconductor laser having an n type cladding layer, an active layer, and a p type cladding layer, a current block layer is provided. For example, the current block layer is arranged partially between the p type cladding layer and the active layer, and in the overlapping region of the p type cladding layer and the active layer. Thus, in a current narrowing region of the overlapping region of the p type cladding layer and the active layer, the current block layer is arranged, thereby to suppress the current injected into a part of the active layer. This results in the formation of a saturable absorbing region, which causes a difference in intensity of the optical output of the semiconductor laser. This can implement self-pulsation.

    Abstract translation: 提高了半导体激光器的特性。 在具有n型包覆层，有源层和p型覆层的半导体激光器中，设置电流阻挡层。 例如，当前块层部分地设置在p型覆层和有源层之间，并且在p型覆层和有源层的重叠区域中。 因此，在p型覆层和有源层的重叠区域的电流变窄区域中，设置电流阻挡层，从而抑制注入有源层的一部分的电流。 这导致形成可饱和吸收区域，这导致半导体激光器的光输出的强度差。 这可以实现自我脉动。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的半导体器件和制造方法

    公开(公告)号：US20150349496A1

    公开(公告)日：2015-12-03

    申请号：US14697908

    申请日：2015-04-28

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Fumito MIYASAKA

    IPC: H01S5/343 ,  H01S5/32

    CPC classification number: H01S5/34333 ,  H01S5/02296 ,  H01S5/106 ,  H01S5/164 ,  H01S5/221 ,  H01S5/2272 ,  H01S5/3202 ,  H01S5/32341 ,  H01S5/34 ,  H01S5/34346

    Abstract: To provide a semiconductor laser that suppresses end face destruction due to catastrophic optical damage (COD) to a light emission end face and has high output characteristics.An n-type clad layer, a current block layer, an active layer, and a p-type clad layer are provided over an n-type substrate whose major plane has an off-angle in a direction from a (0001) plane. For example, the current block layer is arranged on both sides of a current constriction area. Then, the current block layer is arranged so as to be retracted from a cleavage plane (line). In this case, in the active layer having a quantum well structure that is crystal-grown over the n-type clad layer and the current block layer, the layer thickness of a window area from the cleavage plane (line) up to the end part of the current block layer is smaller than the layer thickness of the current constriction area (area between the current block layers). As a result, the band gap of the active layer in the window area becomes large, and thus it is possible to suppress end face destruction due to the COD.

    Abstract translation: 提供半导体激光器，其抑制由于对发光端面的灾难性光学损伤（COD）造成的端面破坏并具有高输出特性。 在n型衬底上设置n型覆盖层，电流阻挡层，有源层和p型覆盖层，该n型衬底的主面在（1-100）方向上具有偏离角 0001）面。 例如，当前阻挡层布置在电流收缩区域的两侧。 然后，将当前的阻挡层布置成从解理面（线）缩回。 在这种情况下，在具有在n型覆盖层和当前阻挡层上晶体生长的量子阱结构的有源层中，从解理面（线）到端部的窗口区域的层厚度 当前阻挡层的厚度小于电流收缩区域（当前阻挡层之间的面积）的层厚度。 结果，窗口区域中的活性层的带隙变大，因此可以抑制由于COD引起的端面破坏。

    LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    7.
    发明申请
    LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    发光元件及其制造方法

    公开(公告)号：US20150349494A1

    公开(公告)日：2015-12-03

    申请号：US14823868

    申请日：2015-08-11

    Applicant: Sony Corporation

    Inventor： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

    IPC: H01S5/187 ,  H01S5/022 ,  H01S5/042 ,  H01S5/343 ,  H01S5/183

    CPC classification number: H01S5/18308 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/125 ,  H01S5/18 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/187 ,  H01S5/22 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/343 ,  H01S5/34313 ,  H01S5/3432 ,  H01S2301/176 ,  H01S2301/18

    Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

    Abstract translation: 发光元件包括台面结构，其中第一导电类型的第一化合物半导体层，有源层和第二导电类型的第二化合物半导体层以该顺序设置，其中第一 化合物半导体层和第二化合物半导体层具有由从台面结构的侧壁部向内延伸的绝缘区域包围的电流收缩区域; 设置成围绕台面结构的壁结构; 连接台面结构和壁结构的至少一个桥结构，壁结构和桥结构各自具有与设置绝缘区域的台面结构部分相同的层结构; 第一电极; 以及设置在所述壁结构的顶面上的第二电极。

    SEMICONDUCTOR LASER
    8.
    发明申请
    SEMICONDUCTOR LASER 审中-公开
    半导体激光器

    公开(公告)号：US20150340840A1

    公开(公告)日：2015-11-26

    申请号：US14815748

    申请日：2015-07-31

    Applicant: ROHM CO., LTD.

    Inventor： Tsuguki NOMA ,  Minoru MURAYAMA ,  Satoshi UCHIDA ,  Tsutomu ISHIKAWA

    IPC: H01S5/223 ,  H01S5/343 ,  H01S5/22

    CPC classification number: H01S5/223 ,  H01S5/221 ,  H01S5/2219 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/34326

    Abstract: Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate (10); an n-type clad layer (12) arranged on the substrate (10); an active layer (13) arranged on the n-type clad layer (12); a p-type clad layer (14), which is arranged on the active layer (13) and composed of a compound containing Al and has a stripe-shaped ridge structure to be a current channel; a current block layer (16), which is arranged on the surface of the p-clad layer (14) excluding an upper surface of the ridge structure and composed of a compound containing Al and has an Al composition ratio not more than that of the p-type clad layer (14); and a light absorption layer (17), which is arranged on the current block layer (16) and absorbs light at the laser oscillation wavelength.

    Abstract translation: 提供了即使对于高温输出也具有低工作电流并稳定地振荡的半导体激光器。 半导体激光器设置有衬底（10）; 布置在所述基板（10）上的n型覆盖层（12）; 布置在所述n型覆层（12）上的有源层（13）; p型覆盖层（14），其配置在有源层（13）上，由含有Al的化合物构成，具有条状的脊状结构成为电流通道; 布置在p包覆层（14）的表面上的电流阻挡层（16），除了脊结构的上表面，并且由含Al的化合物构成，Al组成比不大于 p型覆层（14）; 以及布置在当前阻挡层（16）上并吸收激光振荡波长的光的光吸收层（17）。

    Single-Step-Grown Transversely Coupled Distributed Feedback Laser
    9.
    发明申请
    Single-Step-Grown Transversely Coupled Distributed Feedback Laser 有权
    单步生长横向耦合分布式反馈激光器

    公开(公告)号：US20150280402A1

    公开(公告)日：2015-10-01

    申请号：US14182335

    申请日：2014-02-18

    Applicant: Innolume GmbH

    Inventor： Alexey Gubenko ,  Daniil Livshits ,  Sergey Mikhrin ,  Igor Krestnikov

    IPC: H01S5/125 ,  H01S5/02 ,  H01S5/343

    CPC classification number: H01S5/125 ,  H01S5/0202 ,  H01S5/026 ,  H01S5/06256 ,  H01S5/1085 ,  H01S5/12 ,  H01S5/1221 ,  H01S5/124 ,  H01S5/1246 ,  H01S5/187 ,  H01S5/22 ,  H01S5/221 ,  H01S5/2215 ,  H01S5/3054 ,  H01S5/34313

    Abstract: A transversely-coupled distributed feedback laser diode, which can be processed without overgrowth, is disclosed. The laser is made from an epitaxial heterostructure including a core layer located between two cladding layers, a cap layer, and at least one Al-rich layer. The lateral waveguide is formed by selective oxidation of the Al-rich layer.A surface corrugated grating is formed above the waveguide. The heteroepitaxial structure is designed so that the core layer is placed in close proximity to the top of the laser structure to provide a required overlap between the light and the grating. In order to avoid inadmissible optical losses, there is no metallization above the waveguide. Instead, the metal contacts are offset at some distance, so that the current has to spread in the cap layer before vertical injection into the core layer.

    Abstract translation: 公开了一种横向耦合的分布反馈激光二极管，可以在不产生过度增长的情况下进行处理。 激光器由外延异质结构制成，其包括位于两个覆层之间的芯层，覆盖层和至少一个富Al层。 侧向波导通过富Al层的选择性氧化形成。 表面波纹光栅形成在波导上方。 异质外延结构被设计成使得芯层被放置在紧邻激光结构的顶部以提供光与光栅之间所需的重叠。 为了避免不可接受的光损耗，在波导上方没有金属化。 相反，金属触点偏移一定距离，使得电流必须在垂直注入芯层之前在盖层中扩展。

    SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF
    10.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体激光器件及其制造方法

    公开(公告)号：US20120195339A1

    公开(公告)日：2012-08-02

    申请号：US13359494

    申请日：2012-01-26

    Applicant: Yoshito NISHIOKA ,  Yoichi MUGINO ,  Tsuguki NOMA

    Inventor： Yoshito NISHIOKA ,  Yoichi MUGINO ,  Tsuguki NOMA

    IPC: H01S5/02 ,  H01L21/18

    CPC classification number: H01S5/3434 ,  B82Y20/00 ,  G11B2005/0021 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3404 ,  H01S5/34313 ,  H01S5/34326 ,  H01S2301/145 ,  H01S2301/173

    Abstract: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.

    Abstract translation: 半导体激光器件包括n型覆盖层，第一p型覆盖层和脊条。 该器件还包括插入在n型覆盖层和第一p型覆盖层之间的有源层以及形成在脊条的侧表面上的电流阻挡层。 该器件的脊条包括在与n型覆盖层相对的第一p型覆盖层的相对表面上形成为脊条形状的第二p型覆盖层。 形成脊条，使得第二p型覆盖层的表面的宽度的第一脊宽度与第一p型覆盖层位于同一侧，第二脊宽度作为第一p型覆盖层的表面宽度 第二p型覆盖层存在于与第一p型覆盖层相反的一侧。

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