公开(公告)号：US20180287334A1

公开(公告)日：2018-10-04

申请号：US15939219

申请日：2018-03-28

申请人： NICHIA CORPORATION

发明人： Tadaaki MIYATA ,  Yoshihiro KIMURA

IPC分类号： H01S5/022 ,  H01S5/40 ,  H01S5/22 ,  H01S5/02

CPC分类号： H01S5/02208 ,  H01S5/0071 ,  H01S5/0215 ,  H01S5/02216 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/02292 ,  H01S5/02296 ,  H01S5/221 ,  H01S5/4087

摘要： Provided is a light source device, including: a base member; a semiconductor laser disposed on the base member; a lateral wall portion formed so as to surround the semiconductor laser; a light-transmissive lid covering a gap surrounded by the base member and the lateral wall portion; and a connection member that airtightly connects an upper surface of the lateral wall portion and a lower surface of the lid over an entire perimeter of the lateral wall portion. The lateral wall portion has a reflecting surface which is an inside surface connected to an upper surface, the reflecting surface being inclined so that light emitted from the semiconductor laser is reflected toward the lid. A dielectric film is continuously formed on the reflecting surface and the upper surface. A height of the connection member is greater than a height of the dielectric film formed on the upper surface.

公开(公告)号：US20170237230A1

公开(公告)日：2017-08-17

申请号：US15583176

申请日：2017-05-01

申请人： Sharp Kabushiki Kaisha

发明人： Yoshinobu KAWAGUCHI ,  Takeshi KAMIKAWA

IPC分类号： H01S5/028 ,  H01S5/343 ,  H01S5/223

CPC分类号： H01S5/0287 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/221 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/00

摘要： A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.

公开(公告)号：US20160036197A1

公开(公告)日：2016-02-04

申请号：US14881523

申请日：2015-10-13

申请人： Sharp Kabushiki Kaisha

发明人： Yoshinobu KAWAGUCHI ,  Takeshi Kamikawa

IPC分类号： H01S5/00 ,  H01S5/343 ,  H01S5/223 ,  H01S5/028 ,  H01S5/22

CPC分类号： H01S5/0287 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/221 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/00

摘要： A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.

摘要翻译： 氮化物半导体发光器件包括在第一涂膜上形成的在发光部分形成的氮化铝或氮氧化铝的第一涂膜和氧化铝的第二涂膜。 第二涂膜的厚度为80nm以上1000nm以下。 这里，第一涂膜的厚度优选为6nm以上200nm以下。

公开(公告)号：US20150311677A1

公开(公告)日：2015-10-29

申请号：US14680678

申请日：2015-04-07

申请人： Renesas Electronics Corporation

发明人： Ryuji KOBAYASHI ,  Masahide KOBAYASHI

IPC分类号： H01S5/343 ,  H01S5/32 ,  H01S5/34 ,  H01S5/22

CPC分类号： H01S5/34333 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/22 ,  H01S5/221 ,  H01S5/2216 ,  H01S5/321 ,  H01S5/3407

摘要： The characteristics of a semiconductor laser are improved. In a semiconductor laser having an n type cladding layer, an active layer, and a p type cladding layer, a current block layer is provided. For example, the current block layer is arranged partially between the p type cladding layer and the active layer, and in the overlapping region of the p type cladding layer and the active layer. Thus, in a current narrowing region of the overlapping region of the p type cladding layer and the active layer, the current block layer is arranged, thereby to suppress the current injected into a part of the active layer. This results in the formation of a saturable absorbing region, which causes a difference in intensity of the optical output of the semiconductor laser. This can implement self-pulsation.

摘要翻译： 提高了半导体激光器的特性。 在具有n型包覆层，有源层和p型覆层的半导体激光器中，设置电流阻挡层。 例如，当前块层部分地设置在p型覆层和有源层之间，并且在p型覆层和有源层的重叠区域中。 因此，在p型覆层和有源层的重叠区域的电流变窄区域中，设置电流阻挡层，从而抑制注入有源层的一部分的电流。 这导致形成可饱和吸收区域，这导致半导体激光器的光输出的强度差。 这可以实现自我脉动。

公开(公告)号：US08923355B2

公开(公告)日：2014-12-30

申请号：US14108165

申请日：2013-12-16

申请人： Rohm Co., Ltd.

发明人： Yoshito Nishioka ,  Yoichi Mugino ,  Tsuguki Noma

IPC分类号： H01S5/22 ,  H01S5/34 ,  B82Y20/00 ,  G11B5/00 ,  H01S5/343 ,  H01S5/32 ,  H01S5/16

CPC分类号： H01S5/3434 ,  B82Y20/00 ,  G11B2005/0021 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3404 ,  H01S5/34313 ,  H01S5/34326 ,  H01S2301/145 ,  H01S2301/173

摘要： A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.

摘要翻译： 半导体激光器件包括n型覆盖层，第一p型覆盖层和脊条。 该器件还包括插入在n型覆盖层和第一p型覆盖层之间的有源层，以及形成在脊条的侧表面上的电流阻挡层。 该器件的脊条包括在与n型覆盖层相对的第一p型覆盖层的相对表面上形成为脊条形状的第二p型覆盖层。 形成脊条，使得第二p型覆盖层的表面的宽度的第一脊宽度与第一p型覆盖层位于同一侧，第二脊宽度作为第一p型覆盖层的表面宽度 第二p型覆盖层存在于与第一p型覆盖层相反的一侧。

公开(公告)号：US08906721B2

公开(公告)日：2014-12-09

申请号：US13898808

申请日：2013-05-21

申请人： Fujitsu Limited ,  The University of Tokyo

发明人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Manabu Matsuda ,  Yasuhiko Arakawa

IPC分类号： H01S5/12 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/34 ,  H01L33/02 ,  B82Y40/00 ,  H01L33/30 ,  H01S5/343 ,  H01S5/042 ,  H01S5/30

CPC分类号： H01S5/341 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/02 ,  H01L33/30 ,  H01S5/0424 ,  H01S5/12 ,  H01S5/22 ,  H01S5/221 ,  H01S5/309 ,  H01S5/3403 ,  H01S5/3412 ,  H01S5/34313 ,  Y10S977/774

摘要： A method for manufacturing a semiconductor light emitting device includes forming a lower cladding layer over a GaAs substrate; forming a quantum dot active layer over the lower cladding layer; forming a first semiconductor layer over the quantum dot active layer; forming a diffraction grating by etching the first semiconductor layer; forming a second semiconductor layer burying the diffraction grating; and forming an upper cladding layer having a conductive type different from that of the lower cladding layer over the second semiconductor layer, wherein the processes after forming the quantum dot active layer are performed at a temperature not thermally deteriorating or degrading quantum dots included in the quantum dot active layer.

摘要翻译： 一种半导体发光器件的制造方法，包括在GaAs衬底上形成下包层; 在下包层上形成量子点有源层; 在所述量子点有源层上形成第一半导体层; 通过蚀刻第一半导体层形成衍射光栅; 形成掩埋所述衍射光栅的第二半导体层; 以及在所述第二半导体层上形成具有与所述下包层的导电类型不同的导电类型的上包覆层，其中形成所述量子点有源层之后的工艺在不会使所述量子中包含的量子点不会发生热劣化或降解的温度下进行 点活动层。

公开(公告)号：US08319235B2

公开(公告)日：2012-11-27

申请号：US11785981

申请日：2007-04-23

申请人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

发明人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/028 ,  H01S5/221 ,  H01S5/2231

摘要： A nitride semiconductor light-emitting device including a coating film and a reflectance control film successively formed on a light-emitting portion, in which the light-emitting portion is formed of a nitride semiconductor, the coating film is formed of an aluminum oxynitride film or an aluminum nitride film, and the reflectance control film is formed of an oxide film, as well as a method of manufacturing the nitride semiconductor light-emitting device are provided.

摘要翻译： 一种氮化物半导体发光器件，包括依次形成在发光部分上的发光部分的涂覆膜和反射控制膜，其中发光部分由氮化物半导体形成，所述涂膜由氮氧化铝膜或 氮化铝膜，反射率控制膜由氧化膜形成，以及制造氮化物半导体发光器件的方法。

公开(公告)号：US07855096B2

公开(公告)日：2010-12-21

申请号：US12034195

申请日：2008-02-20

申请人： Chikara Watatani ,  Toru Takiguchi

发明人： Chikara Watatani ,  Toru Takiguchi

IPC分类号： H01L21/00

CPC分类号： H01S5/227 ,  H01S5/2086 ,  H01S5/221 ,  H01S5/2272 ,  H01S5/2275

摘要： A semiconductor film is formed on a GaAs substrate (semiconductor substrate). An SiO2 film (insulating film) is formed on the semiconductor film, and the SiO2 film is patterned. The semiconductor film is etched using the SiO2 film as a mask to form a mesa structure. The surface of the SiO2 film is treated by ashing, using SF6 gas (fluorine-containing gas), to terminate the surface of the SiO2 film with fluorine. The mesa structure is selectively buried with a III-V compound semiconductor film, using the SiO2 film having the surface that has been terminated by fluorine, as a mask.

摘要翻译： 在GaAs衬底（半导体衬底）上形成半导体膜。 在半导体膜上形成SiO 2膜（绝缘膜），对SiO 2膜进行图案化。 使用SiO 2膜作为掩模蚀刻半导体膜以形成台面结构。 用SF6气体（含氟气体）通过灰化处理SiO 2膜的表面，用氟终止SiO 2膜的表面。 使用具有由氟终止的表面的SiO 2膜作为掩模，用III-V族化合物半导体膜选择性地掩埋台面结构。

公开(公告)号：US07772606B2

公开(公告)日：2010-08-10

申请号：US11274133

申请日：2005-11-16

申请人： Jiang-Rong Cao ,  Mamoru Miyawaki

发明人： Jiang-Rong Cao ,  Mamoru Miyawaki

IPC分类号： H01L33/00

CPC分类号： H01S5/026 ,  B82Y20/00 ,  G02B6/12007 ,  G02B6/1225 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/105 ,  H01S5/2059 ,  H01S5/221 ,  H01S5/2214 ,  H01S5/2232 ,  H01S5/3211 ,  H01S5/34306 ,  H01S5/34373 ,  H01S5/4031 ,  H01S5/405 ,  H01S5/4087 ,  H04N9/3129

摘要： A colored light source apparatus is provided. The apparatus includes light sources corresponding to active regions defined by defects in a photonic crystal structure, wherein the photonic crystal structure is based on periodic structures. The apparatus also includes a waveguide, a first electrode, and a second electrode. Varying electrical properties between the first and second electrodes stimulates radiation production in the active regions, wherein the radiation is at least partially coupled to and guided by the waveguide.

摘要翻译： 提供了一种彩色光源装置。 该装置包括对应于由光子晶体结构中的缺陷限定的有源区域的光源，其中光子晶体结构基于周期性结构。 该装置还包括波导，第一电极和第二电极。 第一和第二电极之间的不同电性能刺激有源区域中的辐射产生，其中辐射至少部分耦合到波导并由波导引导。

公开(公告)号：US20090026481A1

公开(公告)日：2009-01-29

申请号：US12232525

申请日：2008-09-18

申请人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

发明人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/028 ,  H01S5/221 ,  H01S5/2231

摘要： A nitride semiconductor light-emitting device including a coating film and a reflectance control film successively formed on a light-emitting portion, in which the light-emitting portion is formed of a nitride semiconductor, the coating film is formed of an aluminum oxynitride film or an aluminum nitride film, and the reflectance control film is formed of an oxide film, as well as a method of manufacturing the nitride semiconductor light-emitting device are provided.

摘要翻译： 一种氮化物半导体发光器件，包括依次形成在发光部分上的发光部分的涂覆膜和反射控制膜，其中发光部分由氮化物半导体形成，所述涂膜由氮氧化铝膜或 氮化铝膜，反射率控制膜由氧化膜形成，以及制造氮化物半导体发光器件的方法。