公开(公告)号：US20120244701A1

公开(公告)日：2012-09-27

申请号：US13423946

申请日：2012-03-19

申请人： Yasushi Higuchi ,  Toshimitsu Uehigashi ,  Kazuhiro Sonoda ,  Harunori Ushikawa ,  Naoki Hanada

发明人： Yasushi Higuchi ,  Toshimitsu Uehigashi ,  Kazuhiro Sonoda ,  Harunori Ushikawa ,  Naoki Hanada

IPC分类号： H01L21/285 ,  C23C16/06 ,  C23C16/56 ,  C23C16/455

CPC分类号： H01L21/28518 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28556 ,  H01L29/456

摘要： The method for the formation of a silicide film herein provided comprises the steps of forming an Ni film on the surface of a substrate mainly composed of Si and then heat-treating the resulting Ni film to thus form an NiSi film as an upper layer of the substrate, wherein, prior to the heat-treatment for the formation of the NiSi film, the Ni film is subjected to a preannealing treatment using H2 gas at a temperature which is less than the heat-treatment temperature and which never causes the formation of any NiSi film in order to remove any impurity present in the Ni film, and the resulting Ni film is then subjected to a silicide-annealing treatment to thus form the NiSi film.

摘要翻译： 本文提供的形成硅化物膜的方法包括以下步骤：在主要由Si构成的衬底的表面上形成Ni膜，然后热处理所得到的Ni膜，从而形成NiSi膜作为上层 基板，其中，在用于形成NiSi膜的热处理之前，使用H 2气体在低于热处理温度的温度下对Ni膜进行预退火处理，并且不会导致形成任何 NiSi膜以除去存在于Ni膜中的任何杂质，然后对所得的Ni膜进行硅化物退火处理，从而形成NiSi膜。

公开(公告)号：US08669191B2

公开(公告)日：2014-03-11

申请号：US13445450

申请日：2012-04-12

申请人： Toshimitsu Uehigashi ,  Yasushi Higuchi ,  Michio Ishikawa ,  Harunori Ushikawa ,  Naoki Hanada

发明人： Toshimitsu Uehigashi ,  Yasushi Higuchi ,  Michio Ishikawa ,  Harunori Ushikawa ,  Naoki Hanada

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/18 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562

摘要： A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), H2 gas and NH3 gas; and then forming an Ni film according to the CVD technique, wherein the film-forming temperature is set at a level between higher than 280° C. and not higher than 350° C.

摘要翻译： 本文公开了形成Ni膜的方法，其包括以下步骤：在真空室中将Si衬底的温度保持在期望的水平; 将真空室中的烷基酰胺化镍引入（在该有机金属化合物中，烷基是选自甲基，乙基，丁基和丙基的基团），H 2气和​​NH 3气 ; 然后根据CVD技术形成Ni膜，其中成膜温度设定在高于280℃且不高于350℃的水平。

公开(公告)号：US20120264310A1

公开(公告)日：2012-10-18

申请号：US13445450

申请日：2012-04-12

申请人： Toshimitsu Uehigashi ,  Yasushi Higuchi ,  Michio Ishikawa ,  Harunori Ushikawa ,  Naoki Hanada

发明人： Toshimitsu Uehigashi ,  Yasushi Higuchi ,  Michio Ishikawa ,  Harunori Ushikawa ,  Naoki Hanada

IPC分类号： H01L21/31

CPC分类号： C23C16/18 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562

摘要： A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), H2 gas and NH3 gas; and then forming an Ni film according to the CVD technique, wherein the film-forming temperature is set at a level between higher than 280° C. and not higher than 350° C.

摘要翻译： 本文公开了形成Ni膜的方法，其包括以下步骤：在真空室中将Si衬底的温度保持在期望的水平; 将真空室中的烷基酰胺化镍引入（在该有机金属化合物中，烷基是选自甲基，乙基，丁基和丙基的基团），H 2气和​​NH 3气 ; 然后根据CVD技术形成Ni膜，其中成膜温度设定在高于280℃且不高于350℃的水平。

公开(公告)号：US06413392B1

公开(公告)日：2002-07-02

申请号：US09599531

申请日：2000-06-23

申请人： Tsuyoshi Sahoda ,  Toshimitsu Uehigashi ,  Yasushi Higuchi ,  Kuniaki Nakajima ,  Tomoyasu Kondo

发明人： Tsuyoshi Sahoda ,  Toshimitsu Uehigashi ,  Yasushi Higuchi ,  Kuniaki Nakajima ,  Tomoyasu Kondo

IPC分类号： C23C1435

CPC分类号： H01J37/3423 ,  C23C14/35 ,  C23C14/564 ,  H01J37/3405

摘要： A sputtering device that efficiently guides sputtering particles ejected from a target to a film deposition subject and prolongs the interval at which a stick preventive member requires replacement. The sputtering device 1 has a vacuum chamber in which a specified sputtering target is placed so as to face a substrate 4 that is also placed in the vacuum chamber 2, and deposits a film on a surface of the substrate 4 using sputtering particles 20 ejected from the sputtering target 6; and particle ejection sections 60 constructed so as to slope at a specified angle of 30° to 60° with respect to the surface of the substrate 4, and respectively facing each other in the shape of a funnel are provided on the sputtering target 6. Lines of magnetic force 13 run from an N pole of a magnet 7a arranged at a rear surface of the target 6 to an S pole of a magnet 7b arranged around the target 6.

摘要翻译： 一种溅射装置，其有效地将从目标喷射的溅射粒子引导到成膜物体，并延长棒状防止构件需要更换的间隔。 溅射装置1具有真空室，其中放置指定的溅射靶以面对也放置在真空室2中的基板4，并且使用从基板4喷射的溅射颗粒20将膜沉积在基板4的表面上 溅射靶6; 并且在溅射靶6上设置有以相对于基板4的表面相对于基板4的表面相对于彼此面对的方式倾斜成特定角度的颗粒喷射部60。 的磁力13从设置在目标6的后表面的磁体7a的N极延伸到布置在目标6周围的磁体7b的S极。

公开(公告)号：US08815737B2

公开(公告)日：2014-08-26

申请号：US13423946

申请日：2012-03-19

申请人： Yasushi Higuchi ,  Toshimitsu Uehigashi ,  Kazuhiro Sonoda ,  Harunori Ushikawa ,  Naoki Hanada

发明人： Yasushi Higuchi ,  Toshimitsu Uehigashi ,  Kazuhiro Sonoda ,  Harunori Ushikawa ,  Naoki Hanada

IPC分类号： H01L21/44 ,  H01L21/285 ,  C23C16/18 ,  C23C16/56 ,  H01L29/45

CPC分类号： H01L21/28518 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28556 ,  H01L29/456

摘要： The method for the formation of a silicide film herein provided comprises the steps of forming an Ni film on the surface of a substrate mainly composed of Si and then heat-treating the resulting Ni film to thus form an NiSi film as an upper layer of the substrate, wherein, prior to the heat-treatment for the formation of the NiSi film, the Ni film is subjected to a preannealing treatment using H2 gas at a temperature which is less than the heat-treatment temperature and which never causes the formation of any NiSi film in order to remove any impurity present in the Ni film, and the resulting Ni film is then subjected to a silicide-annealing treatment to thus form the NiSi film.

摘要翻译： 本文提供的形成硅化物膜的方法包括以下步骤：在主要由Si构成的衬底的表面上形成Ni膜，然后热处理所得到的Ni膜，从而形成NiSi膜作为上层 基板，其中，在用于形成NiSi膜的热处理之前，使用H 2气体在低于热处理温度的温度下对Ni膜进行预退火处理，并且不会导致形成任何 NiSi膜以除去存在于Ni膜中的任何杂质，然后对所得的Ni膜进行硅化物退火处理，从而形成NiSi膜。