公开(公告)号：US06421285B2

公开(公告)日：2002-07-16

申请号：US09855662

申请日：2001-05-16

申请人： Yasurou Matsuzaki ,  Tsuneo Funatsu

发明人： Yasurou Matsuzaki ,  Tsuneo Funatsu

IPC分类号： G11C700

CPC分类号： G11C29/783 ,  G11C17/18 ,  G11C29/785

摘要： A semiconductor storage device includes a redundancy circuit, which replaces a defective memory cell with a redundancy memory cell. The semiconductor storage device further includes a charge pump used for programming redundancy information by performing dielectric breakdown selectively to a capacity. In addition, a redundancy control circuit included in the semiconductor storage device supplies a fixed charge to the capacity, and refreshes the capacity, thereby reproducing the redundancy information programmed by use of the charge pump. Additionally, the redundancy control unit supplies the redundancy information to a redundancy circuit.

公开(公告)号：US4420874A

公开(公告)日：1983-12-20

申请号：US340286

申请日：1982-01-18

申请人： Tsuneo Funatsu

发明人： Tsuneo Funatsu

IPC分类号： H01L21/822 ,  G11C11/411 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/8222 ,  H01L21/8226 ,  H01L27/02 ,  H01L27/04 ,  H01L27/082 ,  H01L27/10 ,  H01L29/73 ,  H03K19/091 ,  H01L21/20 ,  H01L21/302

CPC分类号： H01L27/0233 ,  G11C11/4113 ,  H01L21/76202 ,  H01L21/763

摘要： An I.sup.2 L type semiconductor device having an elementary region which is isolated by V-shape grooves from the other portions of the device, said semiconductor device comprising an insulating layer coating covering the surface of the semiconductor body of the device, wherein an injector region is formed under said insulating layer and surrounded by thicker portions of said insulating layer, and base regions are formed under said insulating layer between said thicker portions of said insulating layer and said V-shape grooves.

公开(公告)号：US4497106A

公开(公告)日：1985-02-05

申请号：US315903

申请日：1981-10-28

申请人： Yoshinobu Momma ,  Tsuneo Funatsu ,  Atusi Sasaki

发明人： Yoshinobu Momma ,  Tsuneo Funatsu ,  Atusi Sasaki

IPC分类号： H01L29/73 ,  H01L21/225 ,  H01L21/285 ,  H01L21/331 ,  H01L21/8248 ,  H01L21/8249 ,  H01L23/532 ,  H01L27/06 ,  H01L29/78

CPC分类号： H01L23/53271 ,  H01L21/2257 ,  H01L21/28525 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/0623 ,  H01L2924/0002 ,  H01L2924/3011

摘要： A semiconductor device comprising at least one bipolar transistor and at least one MIS FET integrated in a single semiconductor substrate, has an electrode for each region of the bipolar transistor and the MIS FET. Each electrode has the same conductivity type as the corresponding region and is connected to ohmic contact with the surface of the corresponding region.

摘要翻译： 包括至少一个双极晶体管和集成在单个半导体衬底中的至少一个MIS FET的半导体器件具有用于双极晶体管和MIS FET的每个区域的电极。 每个电极具有与相应区域相同的导电类型并且连接到与相应区域的表面的欧姆接触。

公开(公告)号：US4375645A

公开(公告)日：1983-03-01

申请号：US105152

申请日：1979-12-19

申请人： Tsuneo Funatsu

发明人： Tsuneo Funatsu

IPC分类号： H01L21/822 ,  G11C11/411 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/8222 ,  H01L21/8226 ,  H01L27/02 ,  H01L27/04 ,  H01L27/082 ,  H01L27/10 ,  H01L29/73 ,  H03K19/091 ,  G11C11/40

CPC分类号： H01L27/0233 ,  G11C11/4113 ,  H01L21/76202 ,  H01L21/763

摘要： An I.sup.2 L type semiconductor device having an elementary region which is isolated by V-shape grooves from the other portions of the device, said semiconductor device comprising an insulating layer coating covering the surface of the semiconductor body of the device, wherein an injector region is formed under said insulating layer and surrounded by thicker portions of said insulating layer, and base regions are formed under said insulating layer between said thicker portions of said insulating layer and said V-shape grooves.

摘要翻译： 一种I2L型半导体器件，具有由器件的其他部分被V形沟槽隔离的基本区域，所述半导体器件包括覆盖器件的半导体本体表面的绝缘层涂层，其中形成注射器区域 在所述绝缘层下方并被所述绝缘层的较厚部分包围，并且在所述绝缘层的所述较厚部分和所述V形槽之间的所述绝缘层下面形成基极区域。