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公开(公告)号：US08599614B2
公开(公告)日：2013-12-03
申请号：US13203612
申请日：2009-04-30
IPC分类号： G11C11/34
CPC分类号： G11C16/3427 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/102 , G11C16/3418 , H01L27/11524 , H01L27/11526
摘要： In a programming method for a NAND flash memory device, a self-boosting scheme is used to eliminate excess electrons in the channel of an inhibit cell string that would otherwise cause programming disturb. The elimination is enabled by applying a negative voltage to word lines connected to the inhibit cell string before boosting the channel, and this leads to bringing high program immunity. A row decoder circuitry to achieve the programming operation and a file system architecture based on the programming scheme to improve the efficiency of file management are also described.
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2.发明申请PROGRAMMING METHOD FOR NAND FLASH MEMORY DEVICE TO REDUCE ELECTRONS IN CHANNELS 有权用于减少通道中的电子的NAND闪存存储器件的编程方法公开(公告)号：US20110310666A1
公开(公告)日：2011-12-22
申请号：US13203612
申请日：2009-04-30
IPC分类号： G11C16/10
CPC分类号： G11C16/3427 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/102 , G11C16/3418 , H01L27/11524 , H01L27/11526
摘要： In a programming method for a NAND flash memory device, a self-boosting scheme is used to eliminate excess electrons in the channel of an inhibit cell string that would otherwise cause programming disturb. The elimination is enabled by applying a negative voltage to word lines connected to the inhibit cell string before boosting the channel, and this leads to bringing high program immunity. A row decoder circuitry to achieve the programming operation and a file system architecture based on the programming scheme to improve the efficiency of file management are also described.
摘要翻译： 在NAND闪速存储器件的编程方法中，使用自增强方案来消除否则会导致编程干扰的抑制单元串的通道中的多余电子。 在增强通道之前，通过对连接到禁止单元串的字线施加负电压来实现消除，并且这导致高程序抗扰性。 还描述了实现编程操作的行解码器电路和基于编程方案的文件系统架构以提高文件管理的效率。
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