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公开(公告)号:US20050104142A1
公开(公告)日:2005-05-19
申请号:US10712575
申请日:2003-11-13
申请人: Vijav Narayanan , Fenton McFeely , Keith Milkove , John Yurkas , Matthew Copel , Paul Jamison , Roy Carruthers , Cyril Cabral , Edmund Sikorskii , Elizabeth Duch , Alessandro Callegari , Sufi Zafar , Kazuhito Nakamura
发明人: Vijav Narayanan , Fenton McFeely , Keith Milkove , John Yurkas , Matthew Copel , Paul Jamison , Roy Carruthers , Cyril Cabral , Edmund Sikorskii , Elizabeth Duch , Alessandro Callegari , Sufi Zafar , Kazuhito Nakamura
IPC分类号: C23C16/34 , H01L21/28 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L29/10 , H01L29/49 , H01L29/772 , H01L29/78 , H01L29/76
CPC分类号: C23C16/34 , H01L21/28088 , H01L21/823828 , H01L29/4966 , H01L29/78
摘要: Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 mΩcm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiO2 containing dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.
摘要翻译: 公开了Ta和N的化合物,潜在地包括其它元素,并且电阻率低于约20mOmegacm,并且N与Ta的元素比大于约0.9,用作场效应器件中的栅极材料。 这种化合物的典型实施方案TaSiN在典型的CMOS处理温度下在含有介电层和高k电介质层的SiO 2 2上是稳定的,功函数接近n型Si的功函数。 金属Ta-N化合物通过化学气相沉积方法使用烷基亚氨基三(二烷基酰氨基)Ta种,例如叔戊酰亚胺基三(二甲基酰氨基)Ta(TAIMATA))作为Ta前体沉积。 沉积是共形的,允许将Ta-N金属化合物柔性引入CMOS加工流程。 用TaN或TaSiN处理的器件显示出接近理想的特性。