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公开(公告)号：US20160069744A1
公开(公告)日：2016-03-10
申请号：US14848555
申请日：2015-09-09
IPC分类号： G01J3/28
CPC分类号： G01J3/2823 , G01J3/0208 , G01J2003/2826 , G02B1/02 , G02B7/028 , G02B13/146
摘要： A compact multispectral imaging system comprising a set of optical elements capable of simultaneously focusing light from one or more spectral bands (SWIR, MWIR, and LWIR) to a common focal plane and a detector capable of capturing the multispectral image, wherein the optical elements comprise optics made from new optical materials or in combination with existing optical materials that transmit in multispectral wavelength regions.
摘要翻译： 一种紧凑的多光谱成像系统，包括能够将来自一个或多个光谱带（SWIR，MWIR和LWIR）的光同时聚焦到公共焦平面的光学元件组和能够捕获多光谱图像的检测器，其中光学元件包括 由新光学材料制成的光学元件，或与在多光谱波长区域中传输的现有光学材料相结合。
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公开(公告)号：US20140245794A1
公开(公告)日：2014-09-04
申请号：US14275918
申请日：2014-05-13
IPC分类号： C03B5/225
CPC分类号： C03B5/2252 , C03B5/06 , C03B2201/86 , C03B2211/00 , C03C3/32 , Y02P40/57
摘要： The present invention is generally directed to a method of making chalcogenide glasses including holding the melt in a vertical furnace to promote homogenization and mixing; slow cooling the melt at less than 10° C. per minute; and sequentially quenching the melt from the top down in a controlled manner. Additionally, the present invention provides for the materials produced by such method. The present invention is also directed to a process for removing oxygen and hydrogen impurities from chalcogenide glass components using dynamic distillation.
摘要翻译： 本发明一般涉及一种制备硫族化物玻璃的方法，包括将熔体保持在立式炉中以促进均质化和混合; 以低于每分钟10℃的速度缓慢冷却熔体; 并且以受控的方式从上到下依次淬火熔体。 此外，本发明提供了通过这种方法制造的材料。 本发明还涉及使用动态蒸馏从硫族化物玻璃组分中除去氧和氢杂质的方法。
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3.发明申请公开(公告)号：US20120168742A1
公开(公告)日：2012-07-05
申请号：US13412692
申请日：2012-03-06
CPC分类号： H01B1/06 , C01B9/08 , C23C14/06 , C23C14/3414 , C23C14/5806 , Y10T428/31533 , Y10T428/31721 , Y10T428/31786
摘要： A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550° C. for at least two hours, and then heating the ampoule at a temperature between 550 and 950° C. for at least two hours. The BCSF material may be doped with potassium, rubidium, or sodium. Additionally, a p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.
摘要翻译： 可以通过组合Cu2S，BaS和BaF2，在400和550℃之间加热安瓿至少两个小时，然后在550和950℃之间的温度下加热安瓿，制成块状铜铜硫化铜（BCSF） C.至少两个小时。 BCSF材料可掺杂有钾，铷或钠。 此外，p型透明导电材料可以在衬底上包含BCSF的薄膜，其中该膜的导电率至少为1S / cm。 基底可以是塑料基底，例如聚醚砜，聚对苯二甲酸乙二醇酯，聚酰亚胺或一些其它合适的塑料或聚合物基材。
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4.发明申请公开(公告)号：US20110067997A1
公开(公告)日：2011-03-24
申请号：US12884586
申请日：2010-09-17
申请人： Vinh Q. Nguyen , Jesse A. Frantz , Jasbinder S. Sanghera , Ishwar D. Aggarwal , Allan J. Bruce , Michael Cyrus , Sergey V. Frolov
发明人： Vinh Q. Nguyen , Jesse A. Frantz , Jasbinder S. Sanghera , Ishwar D. Aggarwal , Allan J. Bruce , Michael Cyrus , Sergey V. Frolov
CPC分类号： H01J37/3429 , C23C14/0623 , C23C14/087 , C23C14/3414 , C23C14/3464 , H01J37/3414 , H01L21/02568 , H01L21/02631 , H01L31/0368 , H01L31/03923 , H01L31/18 , Y02E10/541
摘要： A method for forming a high purity, copper indium gallium selenide (CIGS) bulk material is disclosed. The method includes sealing precursor materials for forming the bulk material in a reaction vessel. The precursor materials include copper, at least one chalcogen selected from selenium, sulfur, and tellurium, and at least one element from group IIIA of the periodic table, which may be selected from gallium, indium, and aluminum. The sealed reaction vessel is heated to a temperature at which the precursor materials react to form the bulk material. The bulk material is cooled in the vessel to a temperature below the solidification temperature of the bulk material and opened to release the formed bulk material. A sputtering target formed by the method can have an oxygen content of 10 ppm by weight, or less.
摘要翻译： 公开了一种形成高纯度铜铟镓硒（CIGS）散装材料的方法。 该方法包括密封用于在反应容器中形成散装材料的前体材料。 前体材料包括铜，至少一种选自硒，硫和碲的硫族元素，以及可选自镓，铟和铝的元素周期表IIIA族中的至少一种元素。 将密封的反应容器加热到前体材料反应以形成散装材料的温度。 将容器材料在容器中冷却至低于散装材料的凝固温度的温度，并打开以释放形成的散装材料。 通过该方法形成的溅射靶可以具有10重量ppm以下的氧含量。
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5.发明申请COPPER INDIUM GALLIUM SELENIDE (CIGS) THIN FILMS WITH COMPOSITION CONTROLLED BY CO-SPUTTERING 有权铜合金薄膜（CIGS）薄膜与组合物通过共溅射控制公开(公告)号：US20110067757A1
公开(公告)日：2011-03-24
申请号：US12884524
申请日：2010-09-17
申请人： Jesse A. Frantz , Jasbinder S. Sanghera , Robel Y. Bekele , Vinh Q. Nguyen , Ishwar D. Aggarwal , Allan J. Bruce , Michael Cyrus , Sergey V. Frolov
发明人： Jesse A. Frantz , Jasbinder S. Sanghera , Robel Y. Bekele , Vinh Q. Nguyen , Ishwar D. Aggarwal , Allan J. Bruce , Michael Cyrus , Sergey V. Frolov
IPC分类号： H01L31/0272 , H01L31/18 , H01L31/0368 , C23C14/34
CPC分类号： H01J37/3429 , C23C14/0623 , C23C14/087 , C23C14/3414 , C23C14/3464 , H01J37/3414 , H01L21/02568 , H01L21/02631 , H01L31/0368 , H01L31/03923 , H01L31/18 , Y02E10/541
摘要： A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.
摘要翻译： 公开了一种形成铜铟镓硒（CIGS）型材料的薄膜的方法和装置。 该方法包括在公共溅射室中提供第一和第二靶。 第一个目标包括CIGS材料源，例如近似化学计量的多晶CIGS材料，第二个靶材包括硫属元素，如硒，硫，碲或这些元素的组合。 第二个目标是在室内提供过量的硫属元素。 这可以至少部分地补偿来自第一靶中的CIGS源的硫属元素的损失，导致具有受控化学计量的薄膜，当用于太阳能电池时可提供有效的光吸收。
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公开(公告)号：US07807595B2
公开(公告)日：2010-10-05
申请号：US12183095
申请日：2008-07-31
CPC分类号： C03C13/043 , C03C3/321 , G02B6/102 , Y10S65/15
摘要： This invention pertains to a chalcogenide glass of low optical loss that can be on the order of 30 dB/km or lower, and to a process for preparing the chalcogenide glass. The process includes the steps of optionally preparing arsenic monochalcogenide precursor or the precursor can be provided beforehand; dynamically distilling the precursor in an open system under vacuum from a hot section to a cold section to purify same; homogenizing the precursor in a closed system so that it is of a uniform color; disposing the distilled or purified precursor and at least one chalcogenide element at a hot section of an open distillation system; dynamically distilling under vacuum in an open system so that the precursor and the at least one chalcogenide element are deposited at a cold section of the open system in a more purified state; homogenizing the precursor and the at least chalcogenide element in a closed system while converting the precursor and the at least one chalcogenide element from crystalline phase to glassy phase.
摘要翻译： 本发明涉及低光损耗的硫属化物玻璃，其数量级可以在30dB / km以下，以及制备硫族化物玻璃的方法。 该方法包括任选地制备砷单体前体的步骤，或者可以预先提供前体; 在开放系统中在真空下从热部分到冷部分动态蒸馏前体以净化其; 在封闭系统中使前体均匀化，使其具有均匀的颜色; 将蒸馏或纯化的前体和至少一种硫族化物元素置于开放蒸馏系统的热段; 在开放系统中在真空下动态蒸馏，使得前体和至少一种硫族化物元素以更纯化的状态沉积在开放系统的冷部分; 在将前体和至少一种硫属元素元素从结晶相转化为玻璃相的同时使封闭体系中的前体和至少硫属元素元素均化。
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7.发明申请LOW LOSS CHALCOGENIDE GLASS AND PROCESS FOR MAKING SAME USING ARSENIC MONOCHALCOGENIDE 有权低损失氯乙烯玻璃及其制备方法使用芳香族单体化合物公开(公告)号：US20080287278A1
公开(公告)日：2008-11-20
申请号：US12183095
申请日：2008-07-31
IPC分类号： C03C3/32
CPC分类号： C03C13/043 , C03C3/321 , G02B6/102 , Y10S65/15
摘要： This invention pertains to a chalcogenide glass of low optical loss that can be on the order of 30 dB/km or lower, and to a process for preparing the chalcogenide glass. The process includes the steps of optionally preparing arsenic monochalcogenide precursor or the precursor can be provided beforehand; dynamically distilling the precursor in an open system under vacuum from a hot section to a cold section to purify same; homogenizing the precursor in a closed system so that it is of a uniform color; disposing the distilled or purified precursor and at least one chalcogenide element at a hot section of an open distillation system; dynamically distilling under vacuum in an open system so that the precursor and the at least one chalcogenide element are deposited at a cold section of the open system in a more purified state; homogenizing the precursor and the at least chalcogenide element in a closed system while converting the precursor and the at least one chalcogenide element from crystalline phase to glassy phase.
摘要翻译： 本发明涉及低光损耗的硫属化物玻璃，其数量级可以在30dB / km以下，以及制备硫族化物玻璃的方法。 该方法包括任选地制备砷单体前体的步骤，或者可以预先提供前体; 在开放系统中在真空下从热部分到冷部分动态蒸馏前体以净化其; 在封闭系统中使前体均匀化，使其具有均匀的颜色; 将蒸馏或纯化的前体和至少一种硫族化物元素置于开放蒸馏系统的热段; 在开放系统中在真空下动态蒸馏，使得前体和至少一种硫族化物元素以更纯化的状态沉积在开放系统的冷部分; 在将前体和至少一种硫属元素元素从结晶相转化为玻璃相的同时使封闭体系中的前体和至少硫属元素元素均化。
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公开(公告)号：US10133039B2
公开(公告)日：2018-11-20
申请号：US14210868
申请日：2014-03-14
申请人： Daniel J. Gibson , Mikhail Kotov , Geoff Chin , Shyam S. Bayya , Jasbinder S. Sanghera , Vinh Q. Nguyen
发明人： Daniel J. Gibson , Mikhail Kotov , Geoff Chin , Shyam S. Bayya , Jasbinder S. Sanghera , Vinh Q. Nguyen
摘要： A method for making a gradient index infrared transmitting optic by thermally treating a preform, where the preform comprises two or more infrared transmitting glasses having different compositions and optical properties, where there is an interface between adjacent glasses, where during the thermal treatment one or more chemical elements from the glasses diffuses through one or more interface resulting in a diffused gradient index optical element comprising a gradient in the chemical element concentration, and where the optical element has a gradient in refractive index and dispersion. Also disclosed is the related infrared transmitting optical element made by this method.
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公开(公告)号：US09708210B2
公开(公告)日：2017-07-18
申请号：US14712338
申请日：2015-05-14
CPC分类号： C03C3/321 , C03B5/06 , C03B5/16 , C03B2201/86
摘要： A method to synthesize striae-free chalcogenide glass using melt processing. A striae-free chalcogenide glass with uniform refractive index.
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10.发明授权Barium copper sulfur fluoride transparent conductive thin films and bulk material 有权钡铜硫氟化物透明导电薄膜和散装材料公开(公告)号：US08728284B2
公开(公告)日：2014-05-20
申请号：US13412692
申请日：2012-03-06
IPC分类号： C23C14/20
CPC分类号： H01B1/06 , C01B9/08 , C23C14/06 , C23C14/3414 , C23C14/5806 , Y10T428/31533 , Y10T428/31721 , Y10T428/31786
摘要： A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550° C. for at least two hours, and then heating the ampoule at a temperature between 550 and 950° C. for at least two hours. The BCSF material may be doped with potassium, rubidium, or sodium. Additionally, a p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.
摘要翻译： 可以通过组合Cu2S，BaS和BaF2，在400和550℃之间加热安瓿至少两个小时，然后在550和950℃之间的温度下加热安瓿，制成块状铜铜硫化铜（BCSF） C.至少两个小时。 BCSF材料可掺杂有钾，铷或钠。 此外，p型透明导电材料可以在衬底上包含BCSF的薄膜，其中该膜的导电率至少为1S / cm。 基底可以是塑料基底，例如聚醚砜，聚对苯二甲酸乙二醇酯，聚酰亚胺或一些其它合适的塑料或聚合物基材。
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