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1.发明申请Photovoltaics optimized for laser remote power applications at eye-safer wavelengths 审中-公开为更安全的波长的激光远程电源应用优化的光伏公开(公告)号：US20160079810A1
公开(公告)日：2016-03-17
申请号：US14850465
申请日：2015-09-10
摘要： A system for transmitting power to a remote equipment, the system including a first laser source that generates a first laser beam; a first tracking device operatively connected to the first laser source, wherein the first tracking device controls a direction of the first laser beam; and a first photovoltaic device operatively connected to the remote equipment located remotely from the first laser source and the first tracking device, wherein the first photovoltaic device includes a semiconductor material that generates an electric current in response to absorbing the first laser beam, and wherein a first wavelength of the first laser beam is within an eye-safer range.
摘要翻译： 一种用于向远程设备发送电力的系统，所述系统包括产生第一激光束的第一激光源; 第一跟踪装置，其可操作地连接到所述第一激光源，其中所述第一跟踪装置控制所述第一激光束的方向; 以及可操作地连接到远离所述第一激光源和所述第一跟踪装置的所述远程设备的第一光伏器件，其中所述第一光伏器件包括响应于吸收所述第一激光束而产生电流的半导体材料，并且其中 第一激光束的第一波长在更安全的范围内。
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2.发明申请公开(公告)号：US20140263171A1
公开(公告)日：2014-09-18
申请号：US14201009
申请日：2014-03-07
IPC分类号： B44C1/22
CPC分类号： B44C1/227 , H01L21/02002 , H01L31/03928 , H01L31/1896 , Y02E10/541
摘要： A method for forming a wet-etchable, sacrificial lift-off layer or layers compatible with high temperature processing, a sacrificial layer, defined as consisting of a single film of one material or multiple films of multiple materials, that can tolerate high temperatures, is deposited on a substrate, called the original substrate, by sputtering or another suitable technique (e.g. evaporation, pulsed laser deposition, wet chemistry, etc.). Intermediate steps result in a lift-off layer attached to the lift-off substrate, that allow for separating the product from the original substrate.
摘要翻译： 用于形成可耐蚀刻的牺牲剥离层或与高温处理兼容的层的方法，定义为由耐受高温的一种材料的单个膜或多个材料的多个膜组成的牺牲层的方法是 通过溅射或其他合适的技术（例如蒸发，脉冲激光沉积，湿化学等）沉积在基底上，称为原始基底。 中间步骤导致附接到剥离基底的剥离层，其允许将产物与原始基底分离。
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公开(公告)号：US20140261669A1
公开(公告)日：2014-09-18
申请号：US14211041
申请日：2014-03-14
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022441 , H01L21/02422 , H01L21/02491 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02631 , H01L21/02658 , H01L21/02664 , H01L31/0322 , H01L31/0326 , H01L31/03928 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： An article made by: depositing a bottom contact onto a flexible glass substrate, and depositing a photovoltaic material on the bottom contact.
摘要翻译： 一种制品：将底部接触沉积到柔性玻璃基底上，并将光伏材料沉积在底部触点上。
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4.发明申请公开(公告)号：US20120168742A1
公开(公告)日：2012-07-05
申请号：US13412692
申请日：2012-03-06
CPC分类号： H01B1/06 , C01B9/08 , C23C14/06 , C23C14/3414 , C23C14/5806 , Y10T428/31533 , Y10T428/31721 , Y10T428/31786
摘要： A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550° C. for at least two hours, and then heating the ampoule at a temperature between 550 and 950° C. for at least two hours. The BCSF material may be doped with potassium, rubidium, or sodium. Additionally, a p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.
摘要翻译： 可以通过组合Cu2S，BaS和BaF2，在400和550℃之间加热安瓿至少两个小时，然后在550和950℃之间的温度下加热安瓿，制成块状铜铜硫化铜（BCSF） C.至少两个小时。 BCSF材料可掺杂有钾，铷或钠。 此外，p型透明导电材料可以在衬底上包含BCSF的薄膜，其中该膜的导电率至少为1S / cm。 基底可以是塑料基底，例如聚醚砜，聚对苯二甲酸乙二醇酯，聚酰亚胺或一些其它合适的塑料或聚合物基材。
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公开(公告)号：US20120119147A1
公开(公告)日：2012-05-17
申请号：US13349658
申请日：2012-01-13
申请人： Jasbinder S. Sanghera , Guillermo R. Villalobos , Woohong Kim , Shyam S. Bayya , Bryan Sadowski , Jesse A. Frantz , Leslie Brandon Shaw , Ishwar D. Aggarwal
发明人： Jasbinder S. Sanghera , Guillermo R. Villalobos , Woohong Kim , Shyam S. Bayya , Bryan Sadowski , Jesse A. Frantz , Leslie Brandon Shaw , Ishwar D. Aggarwal
IPC分类号： C09K11/77
CPC分类号： C04B35/645 , C04B35/50 , C04B35/505 , C04B35/62655 , C04B35/62828 , C04B35/62886 , C04B2235/3203 , C04B2235/3224 , C04B2235/3225 , C04B2235/444 , C04B2235/6562 , C04B2235/661 , C04B2235/786 , C04B2235/9653 , Y10S977/773 , Y10S977/776 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： A transparent polycrystalline ceramic having scattering and absorption loss less than 0.2/cm over a region comprising more than 95% of the originally densified shape and a process for fabricating the same by hot pressing. The ceramic can be any suitable ceramic such as yttria (Y2O3) or scandia (Sc2O3) and can have a doping level of from 0 to 20% and a grain size of greater than 30 although the grains can also be smaller than 30 μm. Ceramic nanoparticles can be coated with a sintering aid to minimize direct contact of adjacent ceramic powder particles and then baked at high temperatures to remove impurities from the coated particles. The thus-coated particles can then be densified by hot pressing into the final ceramic product. The invention further provides a transparent polycrystalline ceramic solid-state laser material and a laser using the hot pressed polycrystalline ceramic.
摘要翻译： 透明多晶陶瓷在包含原始致密形状的95％以上的区域上的散射和吸收损耗小于0.2 / cm，以及通过热压制造该方法。 陶瓷可以是任何合适的陶瓷，例如氧化钇（Y2O3）或Scandia（Sc2O3），并且可以具有0至20％的掺杂水平和大于30的晶粒尺寸，尽管晶粒也可以小于30μm。 可以用烧结助剂涂覆陶瓷纳米颗粒以最小化相邻陶瓷粉末颗粒的直接接触，然后在高温下烘烤以除去涂覆颗粒的杂质。 这样涂覆的颗粒然后可以通过热压成最终陶瓷产品来致密化。 本发明还提供一种透明多晶陶瓷固态激光材料和使用该热压多晶陶瓷的激光。
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公开(公告)号：US20120119146A1
公开(公告)日：2012-05-17
申请号：US13349631
申请日：2012-01-13
申请人： Jasbinder S. Sanghera , Guillermo R. Villalobos , Woohong Kim , Shyam S. Bayya , Bryan Sadowski , Jesse A. Frantz , Leslie Brandon Shaw , Ishwar D. Aggarwal
发明人： Jasbinder S. Sanghera , Guillermo R. Villalobos , Woohong Kim , Shyam S. Bayya , Bryan Sadowski , Jesse A. Frantz , Leslie Brandon Shaw , Ishwar D. Aggarwal
IPC分类号： C09K11/78
CPC分类号： C04B35/645 , C04B35/50 , C04B35/505 , C04B35/62655 , C04B35/62828 , C04B35/62886 , C04B2235/3203 , C04B2235/3224 , C04B2235/3225 , C04B2235/444 , C04B2235/6562 , C04B2235/661 , C04B2235/786 , C04B2235/9653 , Y10S977/773 , Y10S977/776 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： A transparent polycrystalline ceramic having scattering and absorption loss less than 0.2/cm over a region comprising more than 95% of the originally densified shape and a process for fabricating the same by hot pressing. The ceramic can be any suitable ceramic such as yttria (Y2O3) or scandia (Sc2O3) and can have a doping level of from 0 to 20% and a grain size of greater than 30 μm, although the grains can also be smaller than 30 μm. Ceramic nanoparticles can be coated with a sintering aid to minimize direct contact of adjacent ceramic powder particles and then baked at high temperatures to remove impurities from the coated particles. The thus-coated particles can then be densified by hot pressing into the final ceramic product. The invention further provides a transparent polycrystalline ceramic solid-state laser material and a laser using the hot pressed polycrystalline ceramic.
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7.发明申请公开(公告)号：US20110067997A1
公开(公告)日：2011-03-24
申请号：US12884586
申请日：2010-09-17
申请人： Vinh Q. Nguyen , Jesse A. Frantz , Jasbinder S. Sanghera , Ishwar D. Aggarwal , Allan J. Bruce , Michael Cyrus , Sergey V. Frolov
发明人： Vinh Q. Nguyen , Jesse A. Frantz , Jasbinder S. Sanghera , Ishwar D. Aggarwal , Allan J. Bruce , Michael Cyrus , Sergey V. Frolov
CPC分类号： H01J37/3429 , C23C14/0623 , C23C14/087 , C23C14/3414 , C23C14/3464 , H01J37/3414 , H01L21/02568 , H01L21/02631 , H01L31/0368 , H01L31/03923 , H01L31/18 , Y02E10/541
摘要： A method for forming a high purity, copper indium gallium selenide (CIGS) bulk material is disclosed. The method includes sealing precursor materials for forming the bulk material in a reaction vessel. The precursor materials include copper, at least one chalcogen selected from selenium, sulfur, and tellurium, and at least one element from group IIIA of the periodic table, which may be selected from gallium, indium, and aluminum. The sealed reaction vessel is heated to a temperature at which the precursor materials react to form the bulk material. The bulk material is cooled in the vessel to a temperature below the solidification temperature of the bulk material and opened to release the formed bulk material. A sputtering target formed by the method can have an oxygen content of 10 ppm by weight, or less.
摘要翻译： 公开了一种形成高纯度铜铟镓硒（CIGS）散装材料的方法。 该方法包括密封用于在反应容器中形成散装材料的前体材料。 前体材料包括铜，至少一种选自硒，硫和碲的硫族元素，以及可选自镓，铟和铝的元素周期表IIIA族中的至少一种元素。 将密封的反应容器加热到前体材料反应以形成散装材料的温度。 将容器材料在容器中冷却至低于散装材料的凝固温度的温度，并打开以释放形成的散装材料。 通过该方法形成的溅射靶可以具有10重量ppm以下的氧含量。
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8.发明申请COPPER INDIUM GALLIUM SELENIDE (CIGS) THIN FILMS WITH COMPOSITION CONTROLLED BY CO-SPUTTERING 有权铜合金薄膜（CIGS）薄膜与组合物通过共溅射控制公开(公告)号：US20110067757A1
公开(公告)日：2011-03-24
申请号：US12884524
申请日：2010-09-17
申请人： Jesse A. Frantz , Jasbinder S. Sanghera , Robel Y. Bekele , Vinh Q. Nguyen , Ishwar D. Aggarwal , Allan J. Bruce , Michael Cyrus , Sergey V. Frolov
发明人： Jesse A. Frantz , Jasbinder S. Sanghera , Robel Y. Bekele , Vinh Q. Nguyen , Ishwar D. Aggarwal , Allan J. Bruce , Michael Cyrus , Sergey V. Frolov
IPC分类号： H01L31/0272 , H01L31/18 , H01L31/0368 , C23C14/34
CPC分类号： H01J37/3429 , C23C14/0623 , C23C14/087 , C23C14/3414 , C23C14/3464 , H01J37/3414 , H01L21/02568 , H01L21/02631 , H01L31/0368 , H01L31/03923 , H01L31/18 , Y02E10/541
摘要： A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.
摘要翻译： 公开了一种形成铜铟镓硒（CIGS）型材料的薄膜的方法和装置。 该方法包括在公共溅射室中提供第一和第二靶。 第一个目标包括CIGS材料源，例如近似化学计量的多晶CIGS材料，第二个靶材包括硫属元素，如硒，硫，碲或这些元素的组合。 第二个目标是在室内提供过量的硫属元素。 这可以至少部分地补偿来自第一靶中的CIGS源的硫属元素的损失，导致具有受控化学计量的薄膜，当用于太阳能电池时可提供有效的光吸收。
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公开(公告)号：US09227242B2
公开(公告)日：2016-01-05
申请号：US14075239
申请日：2013-11-08
申请人： Jason D. Myers , Jesse A. Frantz , Guillermo R. Villalobos , Jasbinder S. Sanghera , Bryan Sadowski , Robel Y. Bekele
发明人： Jason D. Myers , Jesse A. Frantz , Guillermo R. Villalobos , Jasbinder S. Sanghera , Bryan Sadowski , Robel Y. Bekele
CPC分类号： C23C14/35 , B22D41/02 , C23C14/0635 , C23C14/0641 , C23C14/0647 , C23C14/08 , C23C14/081 , F27B14/10 , F27B2014/104
摘要： A method of containing molten aluminum using non-wetting materials comprising depositing MgAl2O4, or one selected from an oxide, Al2O3, nitride, AlN, BN, carbide, and SiC, onto a crucible. An apparatus for containment of molten aluminum using non-wetting materials comprising a layer of MgAl2O4, or one selected from an oxide, Al2O3, nitride, AlN, BN, carbide, and SiC, deposited onto a crucible.
摘要翻译： 一种使用非润湿材料包含熔融铝的方法，包括将MgAl 2 O 4或选自氧化物，Al 2 O 3，氮化物，AlN，BN，碳化物和SiC中的一种沉积到坩埚上。 使用非湿润材料来容纳熔融铝的装置，其包括沉积在坩埚上的MgAl 2 O 4层或选自氧化物，Al 2 O 3，氮化物，AlN，BN，碳化物和SiC的一层。
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10.发明申请Microstructured ZnO coatings for improved performance in Cu(In, Ga)Se2 photovoltaic devices 审中-公开用于改善Cu（In，Ga）Se2光电器件性能的微结构ZnO涂层公开(公告)号：US20150318412A1
公开(公告)日：2015-11-05
申请号：US14701857
申请日：2015-05-01
IPC分类号： H01L31/0216 , H01L31/032 , H01L31/18
CPC分类号： H01L31/0749 , H01L31/02168 , H01L31/02366 , H01L31/0322 , H01L31/18 , Y02E10/541
摘要： A microstructured ZnO coating that improves the performance of Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) devices via two mechanisms; it acts an antireflective layer with superior non-normal performance to thin film anti-reflective (AR) coatings, and it scatters a large fraction of incoming light at a large angle, resulting in absorption that is on average closer to the p-n junction.
摘要翻译： 通过两种机制改善Cu（In，Ga）Se2（CIGS）光伏（PV）器件的性能的微结构ZnO涂层; 它对抗薄膜抗反射（AR）涂层具有优异的非正常性能的抗反射层，并以大角度散射大部分入射光，导致平均接近p-n结的吸收。
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