公开(公告)号：US07378680B2

公开(公告)日：2008-05-27

申请号：US10931194

申请日：2004-08-31

申请人： Ralph H. Johnson ,  Virgil J. Blasingame

发明人： Ralph H. Johnson ,  Virgil J. Blasingame

IPC分类号： H01L29/06 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01S5/18308 ,  H01S5/3201 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/34353 ,  H01S2302/00

摘要： Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. MEE is performed by alternately depositing single atomic layers of group III and V before, and/or after, and/or in-between quantum wells. Where GaAs is used, the process can be accomplished by alternately opening and closing Ga and As shutters in an MBE system, while preventing both from being open at the same time. Where nitrogen is used, the system incorporates a mechanical means of preventing nitrogen from entering the MBE processing chamber, such as a gate valve.

摘要翻译： 方法和系统产生与含氮量子阱相关的扁平层，并且使用高As流量防止含氮层的3-D生长。 MEE（迁移增强外延）用于平坦化层并增强量子阱界面的平滑度，并实现从含氮量子阱发射的光的光谱变窄。 通过在量子阱之间，之前和/或之后交替沉积III族和V族的单一原子层来执行MEE。 在使用GaAs的情况下，可以通过在MBE系统中交替地打开和关闭Ga和As快门来实现该过程，同时防止两者同时打开。 在使用氮气的情况下，该系统包含防止氮气进入MBE处理室（例如闸阀）的机械装置。