公开(公告)号：US20240235146A9

公开(公告)日：2024-07-11

申请号：US18264956

申请日：2022-02-11

Applicant: The University of Birmingham

Inventor： Kai BONGS ,  Mehdi LANGLOIS ,  Luuk EARL ,  Michael HOLYNSKI

IPC: H01S3/107 ,  G01V7/04 ,  H01S3/067 ,  H01S3/106 ,  H01S3/109 ,  H01S3/16

CPC classification number: H01S3/107 ,  G01V7/04 ,  H01S3/06754 ,  H01S3/1068 ,  H01S3/109 ,  H01S3/1608 ,  H01S2302/00

Abstract: A single arm laser system comprising a first in-phase quadrature modulator, IQM. The first IQM is configured to receive a single frequency fibred laser beam from a frequency locked laser seed, generate a first single side-band frequency based on a carrier frequency of the single frequency fibred laser beam and suppress the carrier frequency, and output a first fibre laser beam having a single side-band suppressed carrier frequency. The single arm laser system also comprises a second IQM in line with the first IQM. The second IQM is configured to receive the first fibre laser beam from the first IQM, generate a second single side-band frequency based on the first single side-band frequency and maintain the first single side-band frequency as the carrier frequency, and output a second fibre laser beam having the first and second single side band frequencies.

公开(公告)号：US20240222937A1

公开(公告)日：2024-07-04

申请号：US18558888

申请日：2022-05-03

Applicant: Yale University

Inventor： Jung Han ,  Jin-Ho Kang ,  Bingjun Li

IPC: H01S5/183

CPC classification number: H01S5/18361 ,  H01S2302/00

Abstract: Multilayer structures containing porosified or electropolished layers of indium phosphide or gallium arsenide are described. Further disclosed are methods for preparing and using such multilayer structures, for example, in vertical cavity surface emitting lasers (VCSELs).

公开(公告)号：US20230344190A1

公开(公告)日：2023-10-26

申请号：US18299459

申请日：2023-04-12

Applicant: Coherent LaserSystems GmbH & Co. KG

Inventor： Guenter Hollemann ,  Christian Hagemann ,  Hannes Winter

IPC: H01S3/136 ,  H01S3/094 ,  H01S3/108 ,  H01S3/131 ,  H01S3/083 ,  H01S3/08

CPC classification number: H01S3/136 ,  H01S3/094 ,  H01S3/108 ,  H01S3/1312 ,  H01S3/083 ,  H01S3/08072 ,  H01S2302/00 ,  H01S3/0606

Abstract: A method for intracavity frequency conversion includes end-pumping a solid-state gain medium in a laser resonator with a pump laser beam to generate an intracavity laser beam circulating in the laser resonator, and frequency-converting a portion of the intracavity laser beam in a nonlinear crystal, located in the laser resonator, to generate a frequency-converted laser beam. The method controls the output power and at least one output beam parameter of the frequency-converted laser beam by adjusting (a) the pump power and (b) a resonator loss imposed on the intracavity laser beam. Taking advantage of both the pump laser beam and the intracavity laser beam contributing to thermal lensing in the gain medium, this control scheme is capable of controlling the output power and the output beam parameter(s) independently of each other.

公开(公告)号：US20230253752A1

公开(公告)日：2023-08-10

申请号：US18187881

申请日：2023-03-22

Applicant: Fujian Hitronics Technologies, Inc.

Inventor： Shaofeng Zhang ,  Guanglei Ding ,  Jianyang Yang ,  Haocheng Hu ,  Huaping Zhang ,  Xingduan Huang ,  Chengkai Ding ,  Jiwu Ling

IPC: H01S3/0941 ,  H01S3/094 ,  H01S3/10 ,  G02B27/30 ,  G02B27/09 ,  G02B27/28

CPC classification number: H01S3/0941 ,  H01S3/094003 ,  H01S3/10092 ,  G02B27/30 ,  G02B27/0972 ,  G02B27/283 ,  H01S2302/00

Abstract: A laser oscillation amplifier includes a seed laser that can produce an input laser beam, a pumping source that can produce a pump light, a semiconductor laser shaping device that can receive the pump light and to produce a shaped pump light, a beam combiner that can combine the shaped pump light and the input laser beam, and a gain fiber coupled with the beam combiner. The gain fiber can absorb the pump light and amplifying the input laser beam to produce an output laser beam.

公开(公告)号：US20150036703A1

公开(公告)日：2015-02-05

申请号：US14520153

申请日：2014-10-21

Applicant: IMRA America, Inc.

Inventor： Liang Dong ,  William Wong ,  Martin E. Fermann

IPC: H01S3/067

CPC classification number: G02B6/02357 ,  G02B6/00 ,  G02B6/02 ,  G02B6/02009 ,  G02B6/02033 ,  G02B6/02361 ,  G02B6/02366 ,  G02B6/02371 ,  G02B6/024 ,  G02B6/036 ,  G02B6/03633 ,  G02B6/03694 ,  G02B6/24 ,  G02B6/26 ,  G02B6/262 ,  G02B6/32 ,  G02F1/0134 ,  H01S3/0057 ,  H01S3/02 ,  H01S3/06708 ,  H01S3/06729 ,  H01S3/06745 ,  H01S3/06754 ,  H01S3/094007 ,  H01S3/1618 ,  H01S3/2308 ,  H01S3/302 ,  H01S2302/00

Abstract: Various embodiments include large cores fibers that can propagate few modes or a single mode while introducing loss to higher order modes. Some of these fibers are holey fibers that comprise cladding features such as air-holes. Additional embodiments described herein include holey rods. The rods and fibers may be used in many optical systems including optical amplification systems, lasers, short pulse generators, Q-switched lasers, etc. and may be used for example for micromachining.

Abstract translation: 各种实施例包括可以传播少数模式或单模的大芯纤维，同时将损耗引入高阶模式。 这些纤维中的一些是包含诸如气孔的包层特征的多孔纤维。 本文所述的另外的实施例包括多孔棒。 棒和纤维可用于许多光学系统，包括光学放大系统，激光器，短脉冲发生器，Q开关激光器等，并且可以用于例如微加工。

公开(公告)号：US08809868B2

公开(公告)日：2014-08-19

申请号：US13289813

申请日：2011-11-04

Applicant: Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Koji Nishizuka

Inventor： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Koji Nishizuka

IPC: H01L31/0312 ,  H01L33/00 ,  H01L29/20 ,  H01L31/0304

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/325 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2302/00 ,  H01S2304/04

Abstract: Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary surface of the substrate is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis extending along the c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer is not more than 5×1017 cm−3, and a ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer is not more than 1/10.

Abstract translation: 提供了一种III族氮化物半导体器件，其包括导电衬底，该导电衬底包括由第一氮化镓基半导体构成的主表面和包含第一p型氮化镓基半导体层的III族氮化物半导体区域， 主表面。 衬底的主表面在垂直于沿着第一氮化镓基半导体的c轴延伸的参考轴的平面的不小于50度且小于130度的范围内倾斜，氧气 第一p型氮化镓系半导体层的浓度Noxg为5×1017cm-3以下，第一p型氮化镓系半导体层的氧浓度Noxg与p型掺杂浓度Npd的比（Noxg / Npd） 型氮化镓系半导体层不大于1/10。

公开(公告)号：US08711891B2

公开(公告)日：2014-04-29

申请号：US12917080

申请日：2010-11-01

Applicant: Hiroshi Motomura ,  Shunichi Sato

Inventor： Hiroshi Motomura ,  Shunichi Sato

IPC: H01S5/00 ,  H01S3/097

CPC classification number: H01S5/18313 ,  B41J2/473 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/18338 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18352 ,  H01S5/18355 ,  H01S5/18377 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/3434 ,  H01S5/423 ,  H01S2302/00

Abstract: A disclosed surface emitting laser device includes an oscillator structure including an active layer, semiconductor multilayer reflection mirrors sandwiching the oscillator structure, an electrode provided on an emitting surface where light is emitted in a manner such that the electrode surrounds an emitting region, and a dielectric film formed in at least one region outside a center part of the emitting region so that a refractive index of the region outside the center part of the emitting region is less than the refractive index of the center part of the emitting region. When viewed from an emitting direction of the light, a part of the electrode overlaps a part of the dielectric film.

Abstract translation: 公开的表面发射激光器件包括：振荡器结构，其包括有源层，夹着振荡器结构的半导体多层反射镜，设置在发光面上的电极，以使电极围绕发射区域的方式发射光;电介质 在发光区域的中心部分外的至少一个区域中形成的膜，使得发光区域的中心部分外的区域的折射率小于发光区域的中心部分的折射率。 当从光的发射方向观察时，电极的一部分与电介质膜的一部分重叠。

公开(公告)号：US20140016184A1

公开(公告)日：2014-01-16

申请号：US13985183

申请日：2012-02-14

Applicant: Mathieu Laroche ,  Herve Gilles ,  Sylvain Girard ,  Thierry Robin ,  Benoit Cadier

Inventor： Mathieu Laroche ,  Herve Gilles ,  Sylvain Girard ,  Thierry Robin ,  Benoit Cadier

IPC: G02F1/35 ,  H01S3/23

CPC classification number: G02F1/353 ,  H01S3/0078 ,  H01S3/0092 ,  H01S3/0675 ,  H01S3/06754 ,  H01S3/094007 ,  H01S3/094042 ,  H01S3/094069 ,  H01S3/1611 ,  H01S3/1618 ,  H01S3/2308 ,  H01S2302/00 ,  H01S2303/00

Abstract: A high-power optical fibre laser includes: an oscillator (1); a pumping laser (5) able to emit a high-power pumping optical radiation beam; and a signal-amplifying optical fibre (3) able to receive the optical source signal and the high-power pumping optical radiation beam so as to generate a high-power laser beam. The pumping laser includes a plurality of pumping multimode laser diodes (7a-7f) and a laser cavity, the laser cavity including a double-clad fibre (4) including: a neodymium-doped monomode waveguide; a fibre Bragg grating (9) forming one end of the laser cavity; and a fibre reflector (11) forming the other end of the laser cavity, the monomodefibre laser being able to generate a laser radiation beam when it is optically pumped by a pumping radiation beam originating from the plurality of pumping laser diodes in order for the laser cavity to emit a high-power pumping laser radiation beam.

Abstract translation: 高功率光纤激光器包括：振荡器（1）; 能够发射高功率泵浦光辐射束的泵浦激光器（5）; 以及能够接收光源信号和高功率泵浦光辐射束以便产生高功率激光束的信号放大光纤（3）。 所述激光激光器包括多个泵浦多模激光二极管（7a-7f）和激光腔，所述激光腔包括双包层光纤（4），包括：钕掺杂单模波导; 形成激光腔的一端的光纤布拉格光栅（9）; 以及形成激光腔的另一端的光纤反射器（11），所述单模光纤激光器在通过源自多个泵浦激光二极管的泵浦辐射束被光泵浦时产生激光辐射束，以便激光 腔体发射大功率激光辐射束。

公开(公告)号：US20120299010A1

公开(公告)日：2012-11-29

申请号：US13484776

申请日：2012-05-31

Applicant: Yohei ENYA ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

Inventor： Yohei ENYA ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC: H01L33/32

CPC classification number: H01L21/02458 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2302/00

Abstract: A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.

Abstract translation: III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，其具有沿与第一参考平面垂直的第一参考平面延伸的第一表面，所述第一参考平面垂直于相对于III族氮化物的c轴以预定角度倾斜的参考轴 半导体和设置在支撑基体的主表面上的外延半导体区域。 外延半导体区域包括GaN基半导体层。 基准轴从III族氮化物半导体的c轴朝向第一晶轴倾斜第一角度，即m轴或a轴。 基准轴从III族氮化物半导体的c轴向第二晶轴倾斜第二角度，m轴和a轴的另一方倾斜。 外延半导体区域的最外表面的形态包括多个凹坑。 坑的坑密度不大于5×104cm-2。

公开(公告)号：US08290322B2

公开(公告)日：2012-10-16

申请号：US13245408

申请日：2011-09-26

Applicant: Liang Dong ,  William Wong ,  Martin E. Fermann

Inventor： Liang Dong ,  William Wong ,  Martin E. Fermann

IPC: G02B6/00

CPC classification number: G02B6/02357 ,  G02B6/00 ,  G02B6/02 ,  G02B6/02009 ,  G02B6/02033 ,  G02B6/02361 ,  G02B6/02366 ,  G02B6/02371 ,  G02B6/024 ,  G02B6/036 ,  G02B6/03633 ,  G02B6/03694 ,  G02B6/24 ,  G02B6/26 ,  G02B6/262 ,  G02B6/32 ,  G02F1/0134 ,  H01S3/0057 ,  H01S3/02 ,  H01S3/06708 ,  H01S3/06729 ,  H01S3/06745 ,  H01S3/06754 ,  H01S3/094007 ,  H01S3/1618 ,  H01S3/2308 ,  H01S3/302 ,  H01S2302/00

Abstract: Various embodiments include large cores fibers that can propagate few modes or a single mode while introducing loss to higher order modes. Some of these fibers are holey fibers that comprising cladding features such as air-holes. Additional embodiments described herein include holey rods. The rods and fibers may be used in many optical systems including optical amplification systems, lasers, short pulse generators, Q-switched lasers, etc. and may be used for example for micromachining.

Abstract translation: 各种实施例包括可以传播少数模式或单模的大芯纤维，同时将损耗引入高阶模式。 这些纤维中的一些是包含诸如气孔的包层特征的多孔纤维。 本文所述的另外的实施例包括多孔棒。 棒和纤维可用于许多光学系统，包括光学放大系统，激光器，短脉冲发生器，Q开关激光器等，并且可以用于例如微加工。