公开(公告)号：US20050156500A1

公开(公告)日：2005-07-21

申请号：US11083680

申请日：2005-03-16

Applicant: Henryk Birecki ,  Vu Binh

Inventor： Henryk Birecki ,  Vu Binh

IPC: H01J1/304 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312 ,  H01J1/02

CPC classification number: B82Y10/00 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312

Abstract: The field emission planar electron emitter device is disclosed that has an emitter electrode, an extractor electrode, and a planar emitter emission layer, electrically coupled to the emitter electrode and the extractor electrode. The planar electron emitter is configured to bias electron emission in a central region of the emission layer in preference to an outer region thereof. One structural example that provides this biasing is achieved by fabricating the planar emitter emission layer so that it has an outer perimeter that is thicker in depth than at an interior portion of the planar emitter emission layer, which reduces electron beam emission at the outer perimeter when an electric field is applied between the emitter electrode and the extractor electrode. The electric field draws emission electrons from the surface of the planar emitter emission layer towards the extractor electrode at a higher rate at the interior portion than at the outer perimeter. The planar electron emitter device further includes a focusing electrode electrically coupled to the planar electron emitter.

公开(公告)号：US20050159071A1

公开(公告)日：2005-07-21

申请号：US11083778

申请日：2005-03-16

Applicant: Henryk Birecki ,  Vu Binh

Inventor： Henryk Birecki ,  Vu Binh

IPC: H01J1/304 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312 ,  H01J9/04 ,  H01J9/12

CPC classification number: B82Y10/00 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312

Abstract: The field emission planar electron emitter device is disclosed that has an emitter electrode, an extractor electrode, and a planar emitter emission layer, electrically coupled to the emitter electrode and the extractor electrode. The planar electron emitter is configured to bias electron emission in a central region of the emission layer in preference to an outer region thereof. One structural example that provides this biasing is achieved by fabricating the planar emitter emission layer so that it has an outer perimeter that is thicker in depth than at an interior portion of the planar emitter emission layer, which reduces electron beam emission at the outer perimeter when an electric field is applied between the emitter electrode and the extractor electrode. The electric field draws emission electrons from the surface of the planar emitter emission layer towards the extractor electrode at a higher rate at the interior portion than at the outer perimeter. The planar electron emitter device further includes a focusing electrode electrically coupled to the planar electron emitter.

Abstract translation: 公开了具有电耦合到发射极和提取器电极的发射极，提取器电极和平面发射极发射层的场发射平面电子发射器件。 平面电子发射器被配置为优先于其外部区域在发射层的中心区域偏置电子发射。 提供该偏置的一个结构实例通过制造平面发射器发射层来实现，使得其具有比在平面发射极发射层的内部部分更深的深度的外周边，这减少了在外周边处的电子束发射， 在发射电极和提取电极之间施加电场。 电场在内部部分比在外周边以更高的速率将发射电子从平面发射体发射层的表面吸引到提取器电极。 平面电子发射器件还包括电耦合到平面电子发射器的聚焦电极。

公开(公告)号：US20050029920A1

公开(公告)日：2005-02-10

申请号：US10932695

申请日：2004-09-01

Applicant: Henryk Birecki ,  Vu Binh ,  Si-ty Lam ,  Huei Kuo ,  Steven Naberhuis

Inventor： Henryk Birecki ,  Vu Binh ,  Si-ty Lam ,  Huei Kuo ,  Steven Naberhuis

IPC: G11C11/42 ,  G11B9/00 ,  H01J1/304 ,  H01J1/308 ,  H01J9/02 ,  H01K1/04 ,  H01J1/14 ,  H01J19/06 ,  H01L29/76 ,  H01L29/94

CPC classification number: B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  H01J1/308

Abstract: A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.

Abstract translation: 公开了一种场致发射装置，其可以在超高密度存储系统内使用。 发射器件包括发射电极，提取器电极和利用肖特基金属 - 半导体结或势垒的固态场控制的发射极。 肖特基金属半导体势垒形成在发射极电极上并与提取器电极电耦合，使得当在发射电极和提取器电极之间放置电位时，从半导体的暴露表面产生电子的场发射 层。 此外，肖特基金属可以选自能够在屏障处提供高电子池的典型的导电层，例如铂，金，银或导电半导体层。 放置在肖特基金属上的半导体层通常是n型非常弱的导电性并且具有宽的带隙，以便产生有助于在提供电子发射所必需的施加场产生诱导的负电子亲和力的条件。 一种类型的宽带隙材料可以选自二氧化钛或氮化钛或其他可比较的材料。