公开(公告)号：US20070170445A1

公开(公告)日：2007-07-26

申请号：US11695299

申请日：2007-04-02

申请人： KAZUYOSHI FURUKAWA ,  Yoshinori Natsume ,  Wakana Nishiwaki

发明人： KAZUYOSHI FURUKAWA ,  Yoshinori Natsume ,  Wakana Nishiwaki

IPC分类号： H01L33/00

CPC分类号： H01L33/20

摘要： A semiconductor light-emitting device including a light-emitting layer forming portion, a semiconductor substrate of a first conductivity type, a first electrode which is disposed on a surface of the semiconductor substrate of the first conductivity type, a semiconductor substrate of a second conductivity type, and a second electrode which is disposed a surface of the semiconductor substrate of the second conductivity type, at least one of the semiconductor substrate of the first conductivity type and the semiconductor substrate of the second conductivity type having an interstice located near an outer side surface on a side close to the light-emitting layer forming portion and around a joined surface on a principal surface of the light-emitting layer forming portion.

摘要翻译： 一种半导体发光器件，包括发光层形成部分，第一导电类型的半导体衬底，设置在第一导电类型的半导体衬底的表面上的第一电极，具有第二导电类型的半导体衬底 以及设置在第二导电类型的半导体衬底的表面上的第二电极，第一导电类型的半导体衬底和第二导电类型的半导体衬底中的至少一个具有位于外侧附近的间隙 在靠近发光层形成部分的一侧的表面和发光层形成部分的主表面上的接合表面附近。

公开(公告)号：US20110229997A1

公开(公告)日：2011-09-22

申请号：US12956245

申请日：2010-11-30

申请人： Yasuhiko Akaike ,  Wakana Nishiwaki

发明人： Yasuhiko Akaike ,  Wakana Nishiwaki

IPC分类号： H01L21/50

CPC分类号： H01L33/0095 ,  H01L33/0079

摘要： In one embodiment, a method for manufacturing a semiconductor light emitting device characterized by bonding a first stacked body to a second stacked body is disclosed. The first stacked body includes a first substrate, a semiconductor layer, and a first metal layer. The second stacked body includes a second substrate and a second metal layer. The method can include overlaying the first metal layer and the second metal layer by shifting a cleavage direction of the first stacked body from a cleavage direction of the second stacked body. The method can include bonding the first stacked body and the second stacked body by increasing a temperature in a state of pressing the first stacked body and the second stacked body into contact.

摘要翻译： 在一个实施例中，公开了一种用于制造半导体发光器件的方法，其特征在于将第一层叠体接合到第二层叠体。 第一层叠体包括第一衬底，半导体层和第一金属层。 第二层叠体包括第二衬底和第二金属层。 该方法可以包括通过从第二层叠体的解理方向移位第一层叠体的解理方向来覆盖第一金属层和第二金属层。 该方法可以包括通过在按压第一层叠体和第二层叠体的状态下增加温度来接合第一层叠体和第二层叠体。

公开(公告)号：US07476902B2

公开(公告)日：2009-01-13

申请号：US11695299

申请日：2007-04-02

申请人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Wakana Nishiwaki

发明人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Wakana Nishiwaki

IPC分类号： H01L27/15

CPC分类号： H01L33/20

摘要： A semiconductor light-emitting device including a light-emitting layer forming portion, a semiconductor substrate of a first conductivity type, a first electrode which is disposed on a surface of the semiconductor substrate of the first conductivity type, a semiconductor substrate of a second conductivity type, and a second electrode which is disposed a surface of the semiconductor substrate of the second conductivity type, at least one of the semiconductor substrate of the first conductivity type and the semiconductor substrate of the second conductivity type having an interstice located near an outer side surface on a side close to the light-emitting layer forming portion and around a joined surface on a principal surface of the light-emitting layer forming portion.

摘要翻译： 一种半导体发光器件，包括发光层形成部分，第一导电类型的半导体衬底，设置在第一导电类型的半导体衬底的表面上的第一电极，具有第二导电类型的半导体衬底 以及设置在第二导电类型的半导体衬底的表面上的第二电极，第一导电类型的半导体衬底和第二导电类型的半导体衬底中的至少一个具有位于外侧附近的间隙 在靠近发光层形成部分的一侧的表面和发光层形成部分的主表面上的接合表面附近。

公开(公告)号：US07220996B2

公开(公告)日：2007-05-22

申请号：US11208638

申请日：2005-08-23

申请人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Wakana Nishiwaki

发明人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Wakana Nishiwaki

IPC分类号： H01L27/15 ,  H01L31/12

CPC分类号： H01L33/20

摘要： A semiconductor light-emitting device including a light-emitting portion permitting light at a specific wavelength and having two surfaces opposite each other. The device also includes a first type of semiconductor substrate and a second type semiconductor substrate which are integrally joined to corresponding surfaces of the light-emitting portion and are substantially transparent to the wavelength. The semiconductor substrates have a joined surface on the surfaces of the light-emitting portion and outer side surfaces which have the width large on a side near the light-emitting portion and become narrow on a side away from the light-emitting portion and further surfaces opposite the joined surfaces. The device also includes first and second electrodes which are disposed on the corresponding further surfaces, a semiconductor layer in a region of at least one of the semiconductor substrates, and an impurity that causes current flow in concentrated manner through the middle of the light-emitting portion.

摘要翻译： 一种半导体发光器件，包括允许特定波长的光并具有彼此相对的两个表面的发光部分。 该器件还包括第一类型的半导体衬底和第二类型半导体衬底，其一体地连接到发光部分的对应表面并且对于波长基本上是透明的。 半导体基板在发光部分和外侧表面上具有在发光部分附近的宽度较大的表面上的接合表面，并且在远离发光部分的一侧变窄，并且进一步的表面 与接合表面相对。 该器件还包括设置在相应的另外的表面上的第一和第二电极，半导体衬底中的至少一个的区域中的半导体层以及通过集中的方式使电流流过发光的中间的杂质 一部分。

公开(公告)号：US20120070958A1

公开(公告)日：2012-03-22

申请号：US13238715

申请日：2011-09-21

申请人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Yasuhiko Akaike ,  Shinji Nunotani ,  Wakana Nishiwaki ,  Masaaki Ogawa ,  Toru Kita ,  Hidefumi Yasuda

发明人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Yasuhiko Akaike ,  Shinji Nunotani ,  Wakana Nishiwaki ,  Masaaki Ogawa ,  Toru Kita ,  Hidefumi Yasuda

IPC分类号： H01L21/762

CPC分类号： H01L21/185 ,  H01L21/76251 ,  H01L33/0079

摘要： In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate.

摘要翻译： 在本实施方式的半导体装置的制造方法中，在室温下，具有比第一基板的热膨胀系数小的第一基板与第二基板粘合。 然后，第一基板和第二基板被加热，第一基板在比第二基板的温度高的温度下加热。 因此，第一基板和第二基板结合在一起。 第一衬底是包括氮化物基半导体层的蓝宝石衬底或包括磷基半导体层的GaAs衬底。 第二基板是硅衬底，GaAs衬底，Ge衬底或金属衬底。

公开(公告)号：US20060043386A1

公开(公告)日：2006-03-02

申请号：US11208638

申请日：2005-08-23

申请人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Wakana Nishiwaki

发明人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Wakana Nishiwaki

IPC分类号： H01L33/00

CPC分类号： H01L33/20

摘要： A semiconductor light-emitting device including a light-emitting portion permitting light at a specific wavelength and having two surfaces opposite each other. The device also includes a first type of semiconductor substrate and a second type semiconductor substrate which are integrally joined to corresponding surfaces of the light-emitting portion and are substantially transparent to the wavelength. The semiconductor substrates have a joined surface on the surfaces of the light-emitting portion and outer side surfaces which have the width large on a side near the light-emitting portion and become narrow on a side away from the light-emitting portion and further surfaces opposite the joined surfaces. The device also includes first and second electrodes which are disposed on the corresponding further surfaces, a semiconductor layer in a region of at least one of the semiconductor substrates, and an impurity that causes current flow in concentrated manner through the middle of the light-emitting portion.

摘要翻译： 一种半导体发光器件，包括允许特定波长的光并具有彼此相对的两个表面的发光部分。 该器件还包括第一类型的半导体衬底和第二类型半导体衬底，其一体地连接到发光部分的对应表面并且对于波长基本上是透明的。 半导体基板在发光部分和外侧表面上具有在发光部分附近的宽度较大的表面上的接合表面，并且在远离发光部分的一侧变窄，并且还有表面 与接合表面相对。 该器件还包括设置在相应的另外的表面上的第一和第二电极，半导体衬底中的至少一个的区域中的半导体层以及通过集中的方式使电流流过发光的中间的杂质 一部分。