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    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    1.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    制造半导体发光器件的方法

    公开(公告)号：US20110229997A1

    公开(公告)日：2011-09-22

    申请号：US12956245

    申请日：2010-11-30

    申请人： Yasuhiko Akaike ,  Wakana Nishiwaki

    发明人： Yasuhiko Akaike ,  Wakana Nishiwaki

    IPC分类号： H01L21/50

    CPC分类号： H01L33/0095 ,  H01L33/0079

    摘要： In one embodiment, a method for manufacturing a semiconductor light emitting device characterized by bonding a first stacked body to a second stacked body is disclosed. The first stacked body includes a first substrate, a semiconductor layer, and a first metal layer. The second stacked body includes a second substrate and a second metal layer. The method can include overlaying the first metal layer and the second metal layer by shifting a cleavage direction of the first stacked body from a cleavage direction of the second stacked body. The method can include bonding the first stacked body and the second stacked body by increasing a temperature in a state of pressing the first stacked body and the second stacked body into contact.

    摘要翻译： 在一个实施例中，公开了一种用于制造半导体发光器件的方法，其特征在于将第一层叠体接合到第二层叠体。 第一层叠体包括第一衬底，半导体层和第一金属层。 第二层叠体包括第二衬底和第二金属层。 该方法可以包括通过从第二层叠体的解理方向移位第一层叠体的解理方向来覆盖第一金属层和第二金属层。 该方法可以包括通过在按压第一层叠体和第二层叠体的状态下增加温度来接合第一层叠体和第二层叠体。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20120070958A1

    公开(公告)日：2012-03-22

    申请号：US13238715

    申请日：2011-09-21

    申请人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Yasuhiko Akaike ,  Shinji Nunotani ,  Wakana Nishiwaki ,  Masaaki Ogawa ,  Toru Kita ,  Hidefumi Yasuda

    发明人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Yasuhiko Akaike ,  Shinji Nunotani ,  Wakana Nishiwaki ,  Masaaki Ogawa ,  Toru Kita ,  Hidefumi Yasuda

    IPC分类号： H01L21/762

    CPC分类号： H01L21/185 ,  H01L21/76251 ,  H01L33/0079

    摘要： In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate.

    摘要翻译： 在本实施方式的半导体装置的制造方法中，在室温下，具有比第一基板的热膨胀系数小的第一基板与第二基板粘合。 然后，第一基板和第二基板被加热，第一基板在比第二基板的温度高的温度下加热。 因此，第一基板和第二基板结合在一起。 第一衬底是包括氮化物基半导体层的蓝宝石衬底或包括磷基半导体层的GaAs衬底。 第二基板是硅衬底，GaAs衬底，Ge衬底或金属衬底。

    Semiconductor light emitting element having three side surfaces inclined to connect the top and bottom surfaces of the transparent substrate
    3.
    发明授权
    Semiconductor light emitting element having three side surfaces inclined to connect the top and bottom surfaces of the transparent substrate 有权
    具有倾斜以连接透明基板的顶表面和底表面的三个侧表面的半导体发光元件

    公开(公告)号：US07329903B2

    公开(公告)日：2008-02-12

    申请号：US11371873

    申请日：2006-03-08

    申请人： Koichi Nitta ,  Takafumi Nakamura ,  Kuniaki Konno ,  Yasuhiko Akaike ,  Yoshiki Endo ,  Katsufumi Kondo

    发明人： Koichi Nitta ,  Takafumi Nakamura ,  Kuniaki Konno ,  Yasuhiko Akaike ,  Yoshiki Endo ,  Katsufumi Kondo

    IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014 ,  H01L2924/00

    摘要： For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface. The third side surfaces incline to diverge toward the top surface, and the second side surfaces incline to diverge more toward the top surface to extract part of the light from the light emitting layer externally. The first side surfaces are formed by cleavage along cleavable planes.

    摘要翻译： 为了提高光提取效率，提高使用该元素的半导体发光元件或半导体发光元件的制造成品率和延长寿命，半导体发光元件包括：发光的发光层; 以及对从发光层发射的光透明的衬底。 衬底限定了在其上支撑发光层的顶表面; 与上表面相对的底表面和连接顶表面和底表面的侧表面。 每个侧表面由从顶表面向底表面延伸的第一侧表面，从第一侧表面向底表面延伸的第二侧表面和从第二侧表面向底表面延伸的第三侧表面组成。 第三侧表面向顶表面倾斜，并且第二侧表面倾斜向顶表面倾斜，以从外部从发光层提取部分光。 第一侧表面通过沿着可切割平面的切割而形成。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS
    4.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS 有权
    半导体发光器件和半导体发光器件

    公开(公告)号：US20070145385A1

    公开(公告)日：2007-06-28

    申请号：US11685375

    申请日：2007-03-13

    申请人： Kenichi Ohashi ,  Yasuhiko Akaike ,  Hitoshi Sugiyama ,  Yasuharu Sugawara

    发明人： Kenichi Ohashi ,  Yasuhiko Akaike ,  Hitoshi Sugiyama ,  Yasuharu Sugawara

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/22

    摘要： A first semiconductor light emitting device comprises: a transparent substrate; a light emitting layer; and a roughened region. The transparent substrate has a first major surface and a second major surface, and is translucent to light in a first wavelength band. The light emitting layer is selectively provided in a first portion on the first major surface of the transparent substrate and configured to emit light in the first wavelength band. The roughened region is provided in a second portion different from the first portion on the first major surface. A second semiconductor light emitting device comprises: a transparent substrate; a light emitting layer; a first electrode; and at least one groove. The groove is provided on the second major surface of the transparent substrate and is extending from a first side face to a second side face opposing the first side face of the transparent substrate.

    摘要翻译： 第一半导体发光器件包括：透明衬底; 发光层; 和一个粗糙的地区。 透明基板具有第一主表面和第二主表面，并且对于在第一波长带中的光是半透明的。 发光层选择性地设置在透明基板的第一主表面上的第一部分中，并且被配置为发射第一波长带中的光。 粗糙区域设置在与第一主表面上的第一部分不同的第二部分中。 第二半导体发光器件包括：透明衬底; 发光层; 第一电极; 和至少一个凹槽。 凹槽设置在透明基板的第二主表面上并且从第一侧面延伸到与透明基板的第一侧面相对的第二侧面。

    LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    7.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    发光装置及其制造方法

    公开(公告)号：US20110042680A1

    公开(公告)日：2011-02-24

    申请号：US12726462

    申请日：2010-03-18

    申请人： Yasuhiko Akaike ,  Yoshinori Natsume ,  Masaaki Ogawa

    发明人： Yasuhiko Akaike ,  Yoshinori Natsume ,  Masaaki Ogawa

    IPC分类号： H01L33/30 ,  H01L33/32 ,  H01L33/44 ,  H01L21/30

    CPC分类号： H01L33/145 ,  H01L33/0079 ,  H01L33/38

    摘要： A light emitting device includes: a conductive substrate; a metal film provided above the conductive substrate; a light emitting layer provided above the metal film; an electrode provided partly above the light emitting layer; and a current suppression layer being in contact with the metal film, provided in a region including at least part of an immediately underlying region of the electrode, and configured to suppress current, a first portion of the metal film including at least part of a portion located between the current suppression layer and the electrode, being separated from an portion other than the first portion.

    摘要翻译： 发光器件包括：导电衬底; 设置在导电性基板上的金属膜; 设置在金属膜上方的发光层; 设置在发光层的上方的电极; 以及电流抑制层，其与所述金属膜接触，设置在包括所述电极的紧下游区域的至少一部分的区域中，并且被构造成抑制电流，所述金属膜的第一部分包括至少部分部分 位于电流抑制层和电极之间，与第一部分以外的部分分离。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF
    8.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20100221856A1

    公开(公告)日：2010-09-02

    申请号：US12717537

    申请日：2010-03-04

    申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

    发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

    IPC分类号： H01L33/30 ,  H01L33/44 ,  H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/005

    摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

    摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。