公开(公告)号：US20130069203A1

公开(公告)日：2013-03-21

申请号：US13237671

申请日：2011-09-20

申请人： Janusz Karol Korycinski ,  Wanliang Wen

发明人： Janusz Karol Korycinski ,  Wanliang Wen

IPC分类号： H01L29/32 ,  H01L21/322

CPC分类号： H01L21/3226 ,  H01L21/76281 ,  H01L21/76283 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/1203 ,  H01L29/32 ,  H01L29/78

摘要： A silicon on insulater (SOI) wafer is provided. A dielectric layer is formed on an active silicon substrate of the wafer. The dielectric layer is patterned and etched to expose selected portions of the silicon substrate. Impurities are then introduced into the exposed portions of the silicon substrate to act as gettering regions. The dielectric layer is then removed and an epitaxial layer of silicon is grown on the silicon substrate. Trenches are etched in the epitaxial layer of silicon through the gettering regions, partially removing the gettering regions and any contaminants contained therein. Remaining portions of the gettering regions still act as gettering regions during subsequent process steps.

摘要翻译： 提供了一种绝缘硅（SOI）晶圆。 在晶片的有源硅衬底上形成电介质层。 对电介质层进行图案化和蚀刻以暴露硅衬底的选定部分。 然后将杂质引入硅衬底的暴露部分中以用作吸杂区域。 然后去除电介质层，并在硅衬底上生长外延硅层。 通过吸气区域在硅的外延层中蚀刻沟槽，部分地去除吸气区域和其中包含的任何污染物。 吸附区域的剩余部分在后续工艺步骤中仍然作为吸气区域。

公开(公告)号：US08664746B2

公开(公告)日：2014-03-04

申请号：US13237671

申请日：2011-09-20

申请人： Janusz Karol Korycinski ,  Wanliang Wen

发明人： Janusz Karol Korycinski ,  Wanliang Wen

IPC分类号： H01L29/30

CPC分类号： H01L21/3226 ,  H01L21/76281 ,  H01L21/76283 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/1203 ,  H01L29/32 ,  H01L29/78

摘要： A silicon on insulater (SOI) wafer is provided. A dielectric layer is formed on an active silicon substrate of the wafer. The dielectric layer is patterned and etched to expose selected portions of the silicon substrate. Impurities are then introduced into the exposed portions of the silicon substrate to act as gettering regions. The dielectric layer is then removed and an epitaxial layer of silicon is grown on the silicon substrate. Trenches are etched in the epitaxial layer of silicon through the gettering regions, partially removing the gettering regions and any contaminants contained therein. Remaining portions of the gettering regions still act as gettering regions during subsequent process steps.

摘要翻译： 提供了一种绝缘硅（SOI）晶圆。 在晶片的有源硅衬底上形成电介质层。 对电介质层进行图案化和蚀刻以暴露硅衬底的选定部分。 然后将杂质引入硅衬底的暴露部分中以用作吸杂区域。 然后去除电介质层，并在硅衬底上生长外延硅层。 通过吸气区域在硅的外延层中蚀刻沟槽，部分地去除吸气区域和其中包含的任何污染物。 吸附区域的剩余部分在后续工艺步骤中仍然作为吸气区域。