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公开(公告)号：US20120112180A1
公开(公告)日：2012-05-10
申请号：US12958593
申请日：2010-12-02
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/78606 , H01L29/78693
摘要： The instant disclosure relates to a metal oxide thin film transistor having a threshold voltage modification layer. The thin film transistor includes a gate electrode, a dielectric layer formed on the gate electrode, an active layer formed on the dielectric layer, a source electrode and a drain electrode disposed separately on the active layer, and a threshold voltage modulation layer formed on the active layer in direct contact with the back channel of the transistor. The threshold voltage modulation layer and the active layer have different work functions so that the threshold voltage modulation layer modulates the threshold voltage of devices and improve the performance of the transistor.
摘要翻译： 本公开涉及具有阈值电压修饰层的金属氧化物薄膜晶体管。 薄膜晶体管包括栅电极，形成在栅电极上的电介质层，形成在电介质层上的有源层，分别设置在有源层上的源电极和漏极，以及形成在栅电极上的阈值电压调制层 有源层与晶体管的背沟直接接触。 阈值电压调制层和有源层具有不同的功能，使得阈值电压调制层调制器件的阈值电压并提高晶体管的性能。
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公开(公告)号：US09201542B2
公开(公告)日：2015-12-01
申请号：US13615790
申请日：2012-09-14
IPC分类号： G09G3/34 , G06F3/042 , G09G3/20 , G06F3/0354
CPC分类号： G06F3/042 , G06F3/03542 , G09G3/20
摘要： A light sensitive display apparatus and an operating method thereof are disclosed herein. The light sensitive display apparatus includes a plurality of pixels, and the operating method of the light sensitive display apparatus includes the following steps. In a writing state, a first data voltage and a first gate voltage are provided to the pixels, and the pixels illuminated by light rays are switched to or kept in a first display state. In an erasing state, a second data voltage and a second gate voltage are provided to the pixels, and the pixels illuminated by light rays are switched to or kept in a second display state.
摘要翻译： 本文公开了一种光敏显示装置及其操作方法。 光敏显示装置包括多个像素，并且光敏显示装置的操作方法包括以下步骤。 在写入状态下，向像素提供第一数据电压和第一栅极电压，并且将被光线照射的像素切换到或保持在第一显示状态。 在擦除状态下，向像素提供第二数据电压和第二栅极电压，并且由光线照射的像素切换到或保持在第二显示状态。
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3.发明申请公开(公告)号：US20120018718A1
公开(公告)日：2012-01-26
申请号：US12927835
申请日：2010-11-26
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/66969
摘要： A self-aligned top-gate thin film transistor and a fabrication method thereof. The method includes preparing a substrate having sequentially formed thereon an oxide semiconductor layer, a dielectric layer, and a metallic layer, wherein the oxide semiconductor layer includes first and second connecting regions that are not covered by the dielectric layer and the metallic layer thereon respectively, the first and second connecting regions having a property of a conductor after undergone a heating process or an ultraviolet irradiation; and a source electrode and a drain electrode formed on the substrate and connected to the first and second connecting regions, respectively. Therefore, the contact resistance of the first and second connecting regions can be reduced without the process of ion dopants as required by prior art techniques, thereby simplifying the manufacturing process. Also, the source electrode and the drain electrode can be exactly relocated and further increase performance of the device.
摘要翻译： 一种自对准顶栅薄膜晶体管及其制造方法。 该方法包括制备其上依次形成有氧化物半导体层，电介质层和金属层的衬底，其中氧化物半导体层包括分别不被电介质层和金属层覆盖的第一和第二连接区域， 所述第一和第二连接区域在进行加热处理或紫外线照射之后具有导体的性质; 以及源极电极和漏电极，分别形成在所述基板上并连接到所述第一和第二连接区域。 因此，不需要现有技术所要求的离子掺杂剂的处理，可以减少第一和第二连接区域的接触电阻，从而简化了制造工艺。 此外，源电极和漏电极可以精确地定位并进一步提高器件的性能。
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公开(公告)号：US20120018719A1
公开(公告)日：2012-01-26
申请号：US13027554
申请日：2011-02-15
IPC分类号： H01L29/12 , H01L31/113
CPC分类号： H01L31/1013 , H01L51/0036 , H01L51/0562 , H01L51/428 , Y02E10/549
摘要： A phototransistor includes a substrate, a gate layer, a dielectric layer, an active layer, a source and a drain, and a light absorption layer. The gate layer is disposed on a top of the substrate, and the dielectric layer is disposed on a top of the gate layer. The active layer has a first bandgap and is disposed on a top of the dielectric layer, and the source and the drain are disposed on a top of the active layer. The light absorption layer has a second bandgap and is capped on the active layer, and the second bandgap is smaller than the first bandgap.
摘要翻译： 光电晶体管包括基板，栅极层，电介质层，有源层，源极和漏极以及光吸收层。 栅极层设置在基板的顶部，并且电介质层设置在栅极层的顶部。 有源层具有第一带隙并且设置在电介质层的顶部上，并且源极和漏极设置在有源层的顶部上。 光吸收层具有第二带隙并且被覆盖在有源层上，并且第二带隙小于第一带隙。
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公开(公告)号：US6106660A
公开(公告)日：2000-08-22
申请号：US62116
申请日：1998-04-17
申请人： Wei-Tsung Chen
发明人： Wei-Tsung Chen
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32183
摘要： An installation for wafer etching that has an additional bias voltage applied to its lower electrode, comprising a central processing unit, a radio frequency generator, a matching box controller, a radio frequency sensor box, a matching box and an etching machine. The central processing unit is connected to the radio frequency generator and the matching box controller for controlling the generation of radio frequency power and the bias voltage provided by the matching box. The radio frequency sensor box receives the radio frequency power and transfers the radio frequency power to the matching box, while a signal is sent to the matching box controller for controlling the bias voltage supplied to the lower electrode. Consequently, the ions can have more kinetic energy resulting in a greater bombarding effect and the formation of polymer on the wafer is limited. Furthermore, the effect of helium loss can be minimized and down time of the etching machine can be greatly reduced. Hence, product stability can be increased as well.
摘要翻译： 一种用于晶片蚀刻的装置，其具有施加到其下电极的附加偏置电压，包括中央处理单元，射频发生器，匹配箱控制器，射频传感器盒，匹配盒和蚀刻机。 中央处理单元连接到射频发生器和匹配箱控制器，用于控制由匹配箱提供的射频功率和偏置电压的产生。 射频传感器盒接收射频功率并将射频功率传送到匹配盒，同时将信号发送到匹配箱控制器，以控制提供给下电极的偏置电压。 因此，离子可以具有更多的动能，导致更大的轰击效果，并且在晶片上形成聚合物是有限的。 此外，氦损失的效果可以最小化，并且可以大大减少蚀刻机的停机时间。 因此，也可以提高产品的稳定性。
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公开(公告)号：US20130187844A1
公开(公告)日：2013-07-25
申请号：US13615790
申请日：2012-09-14
IPC分类号： G09G3/34
CPC分类号： G06F3/042 , G06F3/03542 , G09G3/20
摘要： A light sensitive display apparatus and an operating method thereof are disclosed herein. The light sensitive display apparatus includes a plurality of pixels, and the operating method of the light sensitive display apparatus includes the following steps. In a writing state, a first data voltage and a first gate voltage are provided to the pixels, and the pixels illuminated by light rays are switched to or kept in a first display state. In an erasing state, a second data voltage and a second gate voltage are provided to the pixels, and the pixels illuminated by light rays are switched to or kept in a second display state.
摘要翻译： 本文公开了一种光敏显示装置及其操作方法。 光敏显示装置包括多个像素，并且光敏显示装置的操作方法包括以下步骤。 在写入状态下，向像素提供第一数据电压和第一栅极电压，并且将被光线照射的像素切换到或保持在第一显示状态。 在擦除状态下，向像素提供第二数据电压和第二栅极电压，并且由光线照射的像素切换到或保持在第二显示状态。
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