公开(公告)号：US20050019704A1

公开(公告)日：2005-01-27

申请号：US10920762

申请日：2004-08-18

申请人： Mahmoud Khojasteh ,  Timothy Hughes ,  Ranee Kwong ,  Pushkara Varanasi ,  William Brunsvold ,  Margaret Lawson ,  Robert Allen ,  David Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

发明人： Mahmoud Khojasteh ,  Timothy Hughes ,  Ranee Kwong ,  Pushkara Varanasi ,  William Brunsvold ,  Margaret Lawson ,  Robert Allen ,  David Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

IPC分类号： C08F30/08 ,  C08F32/00 ,  C08F230/08 ,  C08K5/41 ,  C08K5/54 ,  C08L43/04 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G11B5/31 ,  H01L21/027 ,  G03F7/00

CPC分类号： G03F7/094 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0395 ,  G03F7/0758 ,  G11B5/3163

摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.