公开(公告)号：US20050019704A1

公开(公告)日：2005-01-27

申请号：US10920762

申请日：2004-08-18

申请人： Mahmoud Khojasteh ,  Timothy Hughes ,  Ranee Kwong ,  Pushkara Varanasi ,  William Brunsvold ,  Margaret Lawson ,  Robert Allen ,  David Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

发明人： Mahmoud Khojasteh ,  Timothy Hughes ,  Ranee Kwong ,  Pushkara Varanasi ,  William Brunsvold ,  Margaret Lawson ,  Robert Allen ,  David Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

IPC分类号： C08F30/08 ,  C08F32/00 ,  C08F230/08 ,  C08K5/41 ,  C08K5/54 ,  C08L43/04 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G11B5/31 ,  H01L21/027 ,  G03F7/00

CPC分类号： G03F7/094 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0395 ,  G03F7/0758 ,  G11B5/3163

摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.

公开(公告)号：US20070243484A1

公开(公告)日：2007-10-18

申请号：US11405879

申请日：2006-04-18

申请人： Kuang-Jung Chen ,  Mahmoud Khojasteh ,  Ranee Kwong ,  Margaret Lawson ,  Wenjie Li ,  Kaushal Patel ,  Pushkara Varanasi

发明人： Kuang-Jung Chen ,  Mahmoud Khojasteh ,  Ranee Kwong ,  Margaret Lawson ,  Wenjie Li ,  Kaushal Patel ,  Pushkara Varanasi

IPC分类号： G03C1/00

CPC分类号： G03F7/091 ,  C08F220/28 ,  C08F222/40 ,  C08F232/08 ,  Y10S430/151

摘要： The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.

摘要翻译： 本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。 抗反射涂料组合物可在含水碱性显影剂中显影。 抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。 聚合物不包含酸不稳定基团。 本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。

公开(公告)号：US20070231736A1

公开(公告)日：2007-10-04

申请号：US11391187

申请日：2006-03-28

申请人： Kuang-Jung Chen ,  Mahmoud Khojasteh ,  Ranee Kwong ,  Wenjie Li ,  Kaushal Patel ,  Pushkara Varanasi

发明人： Kuang-Jung Chen ,  Mahmoud Khojasteh ,  Ranee Kwong ,  Wenjie Li ,  Kaushal Patel ,  Pushkara Varanasi

IPC分类号： G03C1/00

CPC分类号： G03F7/091

摘要： The present invention discloses an antireflective coating composition for applying between a substrate surface and a photoresist composition. The antireflective coating composition of the present invention comprises a polymer, which includes at least one monomer unit containing a lactone moiety and at least one monomer unit containing an absorbing moiety. The inventive antireflective coating composition is preferably organic solvent-strippable, insoluble in an aqueous alkaline developer for the photoresist composition after exposure to an imaging radiation, and inert to contact reactions with the photoresist composition. The present invention also discloses a method of forming patterned material features on a substrate using the compositions of the invention.

摘要翻译： 本发明公开了一种用于在基材表面和光致抗蚀剂组合物之间施加的抗反射涂料组合物。 本发明的抗反射涂料组合物包括聚合物，其包含至少一个含有内酯部分的单体单元和至少一个含有吸收部分的单体单元。 本发明的抗反射涂料组合物优选是有机溶剂可剥离的，在暴露于成像辐射之后不溶于用于光致抗蚀剂组合物的水性碱性显影剂，并且与光致抗蚀剂组合物的接触反应惰性。 本发明还公开了使用本发明的组合物在衬底上形成图案化材料特征的方法。

公开(公告)号：US20060105269A1

公开(公告)日：2006-05-18

申请号：US10988137

申请日：2004-11-12

申请人： Mahmoud Khojasteh ,  Pushkara Varanasi ,  Wenjie Li ,  Kuang-Jung Chen ,  Kaushal Patel

发明人： Mahmoud Khojasteh ,  Pushkara Varanasi ,  Wenjie Li ,  Kuang-Jung Chen ,  Kaushal Patel

IPC分类号： G03C1/76

CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/24 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/122 ,  Y10S430/126

摘要： A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where R1 represents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; R2 represents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; R3 represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R4 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perflourinated aliphatic group; R5 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR12 represents OH or at least one acid labile group selected from a tertiary alkyl carbonate, a tertiary alkyl ester, a tertiary alkyl ether, an acetal and a ketal. A method of patterning a substrate is also disclosed, wherein the method includes: applying the photoresist composition mentioned above to the substrate to form a film; patternwise exposing the film to an imaging radiation source; and developing areas of the film to form a patterned substrate.

摘要翻译： 公开了包含聚合物的光致抗蚀剂组合物，其中聚合物包括至少一种具有下式的单体：其中R 1表示氢（H），1至20个碳的直链，支链或环烷基 ，碳原子数为1〜20的半全氟化或全氟化的支链或环状烷基，CN; R 2表示5个以上碳原子的脂环基; X表示亚甲基，醚，酯，酰胺或碳酸酯键; R 3表示具有1个或更多个碳原子的直链或支链亚烷基或半或全氟化的直链或支链亚烷基; R 4表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2） （CH 2 CH 2），或半或全氟化脂族基团; R 5表示三氟甲基（CF 3），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2），氟甲基 或半或全氟取代或未取代的脂族基团; n表示1以上的整数， 和OR 12代表OH或选自叔碳酸烷基酯，叔烷基酯，叔烷基醚，缩醛和缩酮中的至少一种酸不稳定基团。 还公开了一种图案化衬底的方法，其中该方法包括：将上述光致抗蚀剂组合物施加到衬底上以形成膜; 将膜图案化地曝光到成像辐射源; 和显影区域以形成图案化衬底。

公开(公告)号：US20060105266A1

公开(公告)日：2006-05-18

申请号：US10987530

申请日：2004-11-12

申请人： Mahmoud Khojasteh ,  Kuang-Jung Chen ,  Pushkara Varanasi

发明人： Mahmoud Khojasteh ,  Kuang-Jung Chen ,  Pushkara Varanasi

IPC分类号： G03C1/76

CPC分类号： G03F7/0392 ,  G03F7/40

摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation (and possibly other radiation) at low energy levels are obtained using a polymer having acrylate/methacrylate monomeric units comprising a low activation energy moiety preferably attached to a naphthalene ester group. The resist allows the performance benefit of acrylate/methacrylate polymers with low activation energy for imaging thereby enabling improved resolution and reduced post-exposure bake sensitivity. The resist polymer also preferably contains monomeric units comprising fluoroalcohol moiety and a monomeric units comprising a lactone moiety.

摘要翻译： 使用具有丙烯酸酯/甲基丙烯酸酯单体单元的聚合物可获得可在193nm辐射（以及可能的其它辐射）下成像的酸催化的正性抗蚀剂组合物，其包含优选连接于萘酯基团的低活化能部分。 抗蚀剂允许具有低活化能的丙烯酸酯/甲基丙烯酸酯聚合物的性能益处用于成像，从而能够提高分辨率和降低曝光后烘烤灵敏度。 抗蚀剂聚合物还优选含有包含氟代醇部分的单体单元和包含内酯部分的单体单元。

公开(公告)号：US20060105267A1

公开(公告)日：2006-05-18

申请号：US10987540

申请日：2004-11-12

申请人： Mahmoud Khojasteh ,  Kuang-Jung Chen ,  Pushkara Varanasi

发明人： Mahmoud Khojasteh ,  Kuang-Jung Chen ,  Pushkara Varanasi

IPC分类号： G03C1/76

CPC分类号： G03F7/40 ,  G03F7/0397

摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation are obtained using a polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group. The resist may optionally contain polymer having acrylate/methacrylate monomeric units with fluorine-containing functional groups. The resists containing the polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group have an improved process window, including improved etch resistance and reduced swelling compared to conventional fluorine-containing 193 nm resist.

摘要翻译： 使用具有包含萘酚酯基的丙烯酸酯/甲基丙烯酸酯单体单元的聚合物获得可用193nm辐射成像的酸催化正性抗蚀剂组合物。 抗蚀剂可任选地含有具有含氟官能团的具有丙烯酸酯/甲基丙烯酸酯单体单元的聚合物。 包含含有萘酚酯基团的具有丙烯酸酯/甲基丙烯酸酯单体单元的聚合物的抗蚀剂具有改进的工艺窗口，与常规含氟193nm抗蚀剂相比，包括改进的耐蚀刻性和降低的溶胀。

公开(公告)号：US20080038676A1

公开(公告)日：2008-02-14

申请号：US11875223

申请日：2007-10-19

申请人： Wenjie Li ,  Margaret Lawson ,  Pushkara Varanasi

发明人： Wenjie Li ,  Margaret Lawson ,  Pushkara Varanasi

IPC分类号： G03F7/00

CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/2041 ,  Y10T428/3154

摘要： A top coat material for applying on top of a photoresist material is disclosed. The top coat material includes a polymer, which includes at least one fluorosulfonamide monomer unit having one of the following two structures: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, and —O—C(O)—C(O)—O—; R1 is selected from the group consisting of an alkylene, an arylene, a semi- or perfluorinated alkylene, and a semi- or perfluorinated arylene; p and q are 0 or 1; R2 is selected from the group consisting of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons; n is an integer from 1 to 6; and R3 is selected from the group consisting of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl. The top coat material may be used in lithography processes, wherein the top coat material is applied on a photoresist layer. The top coat material is preferably soluble in aqueous alkaline developer. The top coat material is also preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

摘要翻译： 公开了一种用于涂覆在光致抗蚀剂材料上的顶涂层材料。 面漆材料包括聚合物，其包括至少一种具有以下两种结构之一的氟磺酰胺单体单元：其中：M是可聚合主链部分; Z是选自-C（O）O-，-C（O） - ， - OC（O） - 和-O-C（O）-C（O）-O-的连接部分; R 1选自亚烷基，亚芳基，半或全氟亚烷基，以及半或全氟化亚芳基; p和q为0或1; R 2选自氢，氟，1至6个碳的烷基和1至6个碳的半或全氟化烷基; n是1至6的整数; 和R 3 3选自氢，烷基，芳基，半或全氟烷基和半或全氟芳基。 面漆材料可以用在光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。 顶涂层材料优选可溶于含水碱性显影剂。 面漆材料也优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。

公开(公告)号：US20050266354A1

公开(公告)日：2005-12-01

申请号：US10855045

申请日：2004-05-27

申请人： Wenjie Li ,  Margaret Lawson ,  Pushkara Varanasi

发明人： Wenjie Li ,  Margaret Lawson ,  Pushkara Varanasi

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/11 ,  G03F7/20

CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/2041 ,  Y10T428/3154

摘要： A top coat material for applying on top of a photoresist material is disclosed. The top coat material includes a polymer, which includes at least one fluorosulfonamide monomer unit having one of the following two structures: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, and —O—C(O)—C(O)—O—; R1 is selected from the group consisting of an alkylene, an arylene, a semi- or perfluorinated alkylene, and a semi- or perfluorinated arylene; p and q are 0 or 1; R2 is selected from the group consisting of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons; n is an integer from 1 to 6; and R3 is selected from the group consisting of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl. The top coat material may be used in lithography processes, wherein the top coat material is applied on a photoresist layer. The top coat material is preferably soluble in aqueous alkaline developer. The top coat material is also preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

摘要翻译： 公开了一种用于涂覆在光致抗蚀剂材料上的顶涂层材料。 面漆材料包括聚合物，其包括至少一种具有以下两种结构之一的氟磺酰胺单体单元：其中：M是可聚合主链部分; Z是选自-C（O）O-，-C（O） - ， - OC（O） - 和-O-C（O）-C（O）-O-的连接部分; R 1选自亚烷基，亚芳基，半或全氟亚烷基，以及半或全氟化亚芳基; p和q为0或1; R 2选自氢，氟，1至6个碳的烷基和1至6个碳的半或全氟化烷基; n是1至6的整数; 和R 3 3选自氢，烷基，芳基，半或全氟烷基和半或全氟芳基。 面漆材料可以用在光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。 顶涂层材料优选可溶于含水碱性显影剂。 面漆材料也优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。

公开(公告)号：US20110204523A1

公开(公告)日：2011-08-25

申请号：US12708877

申请日：2010-02-19

申请人： John C. Arnold ,  Kuang-Jung Chen ,  Matthew E. Colburn ,  Dario L. Goldfarb ,  Stefan Harrer ,  Steven J. Holmes ,  Pushkara Varanasi

发明人： John C. Arnold ,  Kuang-Jung Chen ,  Matthew E. Colburn ,  Dario L. Goldfarb ,  Stefan Harrer ,  Steven J. Holmes ,  Pushkara Varanasi

IPC分类号： H01L23/522 ,  G03F7/20

CPC分类号： H01L23/53295 ,  G03F7/091 ,  G03F7/38 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L2221/1021 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers.

摘要翻译： 一种用于制造双镶嵌结构的方法包括提供涂覆在下面的电介质堆叠上的第一光致抗蚀剂层，将所述第一光致抗蚀剂层暴露于第一预定图案的光，将第二光致抗蚀剂层涂覆到预曝光的第一光致抗蚀剂层上， 第二光致抗蚀剂层到第二预定图案的光，任选地后曝光烘烤多层光致抗蚀剂层并显影所述光致抗蚀剂层以在光致抗蚀剂层中形成多层双镶嵌结构。

公开(公告)号：US20130026639A1

公开(公告)日：2013-01-31

申请号：US13615980

申请日：2012-09-14

申请人： John C. Arnold ,  Kuang-Jung Chen ,  Matthew E. Colburn ,  Dario L. Goldfarb ,  Stefan Harrar ,  Steven J. Holmes ,  Pushkara Varanasi

发明人： John C. Arnold ,  Kuang-Jung Chen ,  Matthew E. Colburn ,  Dario L. Goldfarb ,  Stefan Harrar ,  Steven J. Holmes ,  Pushkara Varanasi

IPC分类号： H01L21/428 ,  H01L23/48

CPC分类号： H01L23/53295 ,  G03F7/091 ,  G03F7/38 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L2221/1021 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers.

摘要翻译： 一种用于制造双镶嵌结构的方法包括提供涂覆在下面的电介质堆叠上的第一光致抗蚀剂层，将所述第一光致抗蚀剂层暴露于第一预定图案的光，将第二光致抗蚀剂层涂覆到预曝光的第一光致抗蚀剂层上， 第二光致抗蚀剂层到第二预定图案的光，任选地后曝光烘烤多层光致抗蚀剂层并显影所述光致抗蚀剂层以在光致抗蚀剂层中形成多层双镶嵌结构。