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公开(公告)号：US11488832B2
公开(公告)日：2022-11-01
申请号：US17264514
申请日：2019-12-25
发明人： Jiazhen Zheng
IPC分类号： H01L21/306 , B24B37/04
摘要： Provided are a method and apparatus for final polishing of a silicon wafer. The method for final polishing includes: within a predetermined period of time remaining before completion of the final polishing, forming a hydrophilic silicon oxide film on a surface of the silicon wafer by using both a polishing slurry and an oxidizing solution as a polishing liquid.
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公开(公告)号：US12122067B2
公开(公告)日：2024-10-22
申请号：US17279600
申请日：2020-07-24
发明人： Jiazhen Zheng , Kinpeng Low , Haitang Gao
摘要： Provided are a method for cutting silicon rod and an apparatus for diamond multi-wire cutting, the method for cutting silicon rod includes: using a cooling pipe to supply cutting fluid to the diamond wire, and using the diamond wire to cut the silicon rod, wherein the distance between the supply position of the cutting fluid and the periphery of the silicon rod is 10-20 mm; or adjusting the new wire running amount and/or feed speed at different positions of the crystal cross section during the cutting process.
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公开(公告)号：US20240247403A1
公开(公告)日：2024-07-25
申请号：US18289890
申请日：2022-06-22
发明人： Shuangli WANG , Chun-hung CHEN , Chenguang SUN
CPC分类号： C30B15/203 , C30B29/06
摘要： Provided are a method and apparatus for single crystal growth, and a single crystal. The method includes: determining a V/G window range that can produce a perfect crystal according to a V/G theory; obtaining a crystal growth rate V, and obtaining a range of a temperature gradient G at a solid-liquid interface for crystal growth; and obtaining a single crystal by determining a gap d or a crystal bar radius r according to the range of the temperature gradient G and a function F(d, r) of the gap d and the crystal bar radius r.
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公开(公告)号：US20220411958A1
公开(公告)日：2022-12-29
申请号：US17787600
申请日：2020-12-21
发明人： Mo HUANG , Linyan LIU , Haitang GAO , Qi LIU , Yi CHEN , Shuangli WANG
摘要： A system and a method for controlling temperature of semiconductor single crystal growth. The system includes: an image collection apparatus, configured to capture an image of an edge line of a crystal rod that grows at a solid-liquid interface, so as to determine the width of the edge fine at the interface; a heating apparatus, configured to heat a crucible; and a temperature control apparatus, configured to control the heating power of the heating apparatus, and the temperature control apparatus controls the heating power of the heating apparatus according to the width of the edge line.
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公开(公告)号：US20220223481A1
公开(公告)日：2022-07-14
申请号：US17609419
申请日：2020-05-07
发明人： Jiazhen ZHENG , Chien-Ming CHEN , KinPeng LOW
摘要： The present disclosure provides a method and a system for automatically detecting and controlling defects on a wafer. The method includes the following steps: providing at least one stacked wafer; constructing a defect distribution map based on a defect information on each of the at least one wafer, wherein, the defect information includes the number of defects, types of the defects, and locations of the defects; partitioning at least one predetermined region in the defect distribution map; determining the number of predetermined defects in each of the at least one predetermined region based on the locations of the defects; comparing the number of the predetermined defects in the each of the at least one predetermined region with a set threshold, and determining detection results based on comparison results.
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公开(公告)号：US20210296133A1
公开(公告)日：2021-09-23
申请号：US17264514
申请日：2019-12-25
发明人： Jiazhen Zheng
IPC分类号： H01L21/306 , B24B37/04
摘要： Provided are a method and apparatus for final polishing of a silicon wafer. The method for final polishing includes: within a predetermined period of time remaining before completion of the final polishing, forming a hydrophilic silicon oxide film on a surface of the silicon wafer by using both a polishing slurry and an oxidizing solution as a polishing liquid.
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公开(公告)号：US20230110359A1
公开(公告)日：2023-04-13
申请号：US17913173
申请日：2021-04-06
发明人： Mo HUANG , Linyan LIU , Haitang GAO , Yi CHEN , Qi LIU , Shuangli WANG
摘要： The disclosure discloses a method and a system for controlling temperature during crystal growth. The method includes that: the power of each of the heaters is constantly adjusted and simulating is performed by software to calculate the thermal field correspondingly at a solid-liquid interface and vicinity of the solid-liquid interface; the thermal field is coupled with a moving grid to determine whether the solid-liquid interface and the total thermal energy both reach thermal equilibrium; the power of each of the heaters that enables both the solid-liquid interface and the total thermal energy to reach the thermal equilibrium is stored and a thermal equilibrium diagram is drawn based on the power of each of the heaters; and during crystal growth, the power of each of the heaters is selected from the thermal equilibrium diagram which is drawn to control the temperature gradient at the solid-liquid interface.
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公开(公告)号：US20220134600A1
公开(公告)日：2022-05-05
申请号：US17279600
申请日：2020-07-24
发明人： Jiazhen ZHENG , Kinpeng LOW , Haitang GAO
摘要： Provided are a method for cutting silicon rod and an apparatus for diamond multi-wire cutting, the method for cutting silicon rod includes: using a cooling pipe to supply cutting fluid to the diamond wire, and using the diamond wire to cut the silicon rod, wherein the distance between the supply position of the cutting fluid and the periphery of the silicon rod is 10-20 mm; or adjusting the new wire running amount and/or feed speed at different positions of the crystal cross section during the cutting process.
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9.发明申请公开(公告)号：US20210363659A1
公开(公告)日：2021-11-25
申请号：US16966905
申请日：2019-12-20
发明人： Jiazhen ZHENG
摘要： A seed crystal, a method for preparing monocrystal silicon by a seed crystal and a Czochralski method and the monocrystal silicon are disclosed, herein, the seed crystal is provided with a hole, and additives can be stored in the hole.
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公开(公告)号：US20210276150A1
公开(公告)日：2021-09-09
申请号：US17192918
申请日：2021-03-05
发明人： Chien-Ming CHEN , Kin Peng LOW
IPC分类号： B24B57/02 , B24B37/08 , B24B37/005
摘要： The present disclosure discloses a control method of a grinding water flow rate during a double side grinding process. A double side grinder used includes a grinding wheel, a feed unit and a water supply device, wherein a water inlet is disposed on the feed unit. The control method includes: S001: according to the operation procedure of a double side grinder, prepare for grinding and complete the installation and debugging of workpiece; S002: in the process of double side grinding, the flow rate of the water inlet is set to decrease with the shortening of the teeth length of the grinding wheel, and the flow rate of the water inlet is set to have a linear relationship with the teeth length of the grinding wheel.
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