摘要:
A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (1), extreme ultraviolet light transmission parts (2, 3), an extreme ultraviolet lithography mask (4), a photon sieve (6) and a collection (7) and analysis (8) system. Point light source beams emitted by the extreme ultraviolet light source (1) are focused on the extreme ultraviolet lithography mask (4) through the extreme ultraviolet light transmission parts (2, 3); the extreme ultraviolet lithography mask (4) emits scattered light and illuminates the photon sieve (6); and the photon sieve (6) forms a dark field image and transmits the same to the collection (7) and analysis (8) system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution.
摘要:
The present disclosure relates to the field of micro-nano fabrication, and provides a projection-type photolithography system using a composite photon sieve. The system comprises: a lighting system, a mask plate, a composite photon sieve and a substrate, which are arranged in order. The lighting system is adapted to generate incident light and irradiate the mask plate with the incident light. The mask plate is adapted to provide an object to be imaged by the composite photon sieve, and the incident light reaches the composite photon sieve after passing through the mask plate. The composite photon sieve is adapted to perform imaging, by which a pattern on the mask plate is imaged on the substrate. The substrate is adapted to receive an image of the pattern on the mask plate imaged by the composite photon sieve. According to the present disclosure, because the composite photon sieve is used instead of a projection objective lens in a conventional projection-type photolithography system, the advantage of high efficiency in the conventional projection-type photolithography system can be reserved, and also photolithography can be performed in batches rapidly, so that photolithography efficiency can be improved. Meanwhile, costs can be effectively cut down and the system can be reduced in size.
摘要:
A method for testing anticorrosion performance of an aqueous protective fluid by immersing a testing electrode comprising a plurality of individual electrodes insulated from and spaced with respect to one another into an aqueous protective fluid; immersing a reference electrode into the aqueous protective fluid at a predetermined distance from the testing electrode; connecting an Ohmmeter sequentially between each of the individual electrodes and the reference electrode to measure a plurality of electrical resistances between each of the individual electrodes and the reference electrode whereby obtaining a distribution of resistances. The distribution of resistances defines the anticorrosion performance of the aqueous protective fluid.
摘要:
This relates to a direct testing method and apparatus for testing anticorrosion performance of aqueous protective fluids with a wire beam electrode sensor, wherein N electrodes pieces insulated from each other are assembled to form a working electrode whose working face functions as a detecting sensor, and is submerged for a predetermined time interval in aqueous protective fluids along with a reference electrode; a power source, a working electrode, aqueous protective fluids, and a reference electrode comprise a closed electric circuit for performing the resistance test; the anticorrosion performance of different aqueous protective fluids is compared by the measured distribution of resistances, wherein the larger the resistance of aqueous protective fluids, the better its anticorrosion ability.
摘要:
A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (1), extreme ultraviolet light transmission parts (2, 3), an extreme ultraviolet lithography mask (4), a photon sieve (6) and a collection (7) and analysis (8) system. Point light source beams emitted by the extreme ultraviolet light source (1) are focused on the extreme ultraviolet lithography mask (4) through the extreme ultraviolet light transmission parts (2, 3); the extreme ultraviolet lithography mask (4) emits scattered light and illuminates the photon sieve (6); and the photon sieve (6) forms a dark field image and transmits the same to the collection (7) and analysis (8) system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution.
摘要:
The present disclosure relates to the field of micro-nano fabrication, and provides a projection-type photolithography system using a composite photon sieve. The system comprises: a lighting system, a mask plate, a composite photon sieve and a substrate, which are arranged in order. The lighting system is adapted to generate incident light and irradiate the mask plate with the incident light. The mask plate is adapted to provide an object to be imaged by the composite photon sieve, and the incident light reaches the composite photon sieve after passing through the mask plate. The composite photon sieve is adapted to perform imaging, by which a pattern on the mask plate is imaged on the substrate. The substrate is adapted to receive an image of the pattern on the mask plate imaged by the composite photon sieve. According to the present disclosure, because the composite photon sieve is used instead of a projection objective lens in a conventional projection-type photolithography system, the advantage of high efficiency in the conventional projection-type photolithography system can be reserved, and also photolithography can be performed in batches rapidly, so that photolithography efficiency can be improved. Meanwhile, costs can be effectively cut down and the system can be reduced in size.