Acoustic wave device and acoustic wave filter
    1.
    发明授权
    Acoustic wave device and acoustic wave filter 有权
    声波装置和声波滤波器

    公开(公告)号:US08669832B2

    公开(公告)日:2014-03-11

    申请号:US13125633

    申请日:2010-02-23

    CPC classification number: H03H9/02992 H03H3/08 H03H9/02685 H03H9/14517

    Abstract: An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.

    Abstract translation: 声波装置包括叉指式换能器(IDT)电极和面向IDT电极的单独电极。 IDT电极包括彼此面对的第一和第二梳状电极。 第一梳状电极包括第一汇流条,第一交叉指状电极指和第一虚拟电极指。 所述第二梳状电极包括与所述第一交叉指状物电极指相交叉的第二汇流条第二交叉指状电极指,所述第二虚拟电极指指向所述第一交叉指状电极指,所述加权部和非加权部。 加权部分在第二交叉指状电极指和第二虚拟电极指之间的空间具有电极。 在非加重部分中,在非叉指区域中最靠近分离电极的空间之外的空间中不存在电极。 该声波装置防止IDT电极和分离电极之间的短路,并且提供抑制不想要的波的优良特性。

    Surface acoustic wave filter and duplexer using the same
    2.
    发明授权
    Surface acoustic wave filter and duplexer using the same 有权
    表面声波滤波器和双工器使用相同

    公开(公告)号:US08410865B2

    公开(公告)日:2013-04-02

    申请号:US12827091

    申请日:2010-06-30

    CPC classification number: H03H9/02992 H03H9/725

    Abstract: A SAW filter includes a piezoelectric body, an IDT electrode on the piezoelectric body, and signal wiring electrically connected to the IDT electrode. The signal wiring has a thickness not less than a skin depth specified based on the frequency of a signal passing through the signal wiring and the electrical conductivity of the signal wiring. As a result, the signal wiring has low propagation loss of the signal passing through it, so that the SAW filter has excellent transmission characteristics.

    Abstract translation: SAW滤波器包括压电体,压电体上的IDT电极和与IDT电极电连接的信号线。 信号布线的厚度不小于根据通过信号布线的信号的频率和信号布线的导电率而指定的皮肤深度。 结果,信号线路的信号传播损耗低,SAW滤波器具有优异的传输特性。

    ELASTIC WAVE ELEMENT, AND ELECTRICAL APPARATUS AND DUPLEXER USING SAME
    3.
    发明申请
    ELASTIC WAVE ELEMENT, AND ELECTRICAL APPARATUS AND DUPLEXER USING SAME 有权
    弹性波形元件,以及使用相同的电气设备和双机器

    公开(公告)号:US20120139662A1

    公开(公告)日:2012-06-07

    申请号:US13390115

    申请日:2010-10-29

    CPC classification number: H03H9/02559 H03H9/1452 H03H9/64

    Abstract: An acoustic wave device (5) includes a piezoelectric substrate (6) made of a lithium niobate material having the Euler angles (φ, θ, ψ), an electrode (7) disposed on the piezoelectric substrate (6) for exciting a major acoustic wave of a wavelength λ, and a protective layer (8) disposed on the piezoelectric substrate (6) to cover the electrode (7). The protective layer (8) has a thickness greater than 0.27λ. The Euler angles satisfy −100°≦θ≦−60°; 1.193φ−2°≦ψ≦1.193φ+2°; and either ψ≦−2φ−3° or −2φ+3°≦ψ.

    Abstract translation: 声波装置(5)包括由具有欧拉角(&phgr;; thetas;ψ)的铌酸锂材料制成的压电基片(6),设置在压电基片(6)上的电极(7) 波长λ的主声波和设置在压电基板(6)上以覆盖电极(7)的保护层(8)。 保护层(8)的厚度大于0.27λ。 欧拉角满足-100°≦̸&thetas;≦̸ -60°; 1.193&phgr。-2°≦̸ψ≦̸ 1.193&phgr。+ 2°; ψ≦̸ -2&phgr; -3°或-2&phgr; + 3°≦̸ψ。

    ELASTIC WAVE RESONATOR, ELASTIC WAVE FILTER, AND ANTENNA SHARING DEVICE USING THE SAME
    5.
    发明申请
    ELASTIC WAVE RESONATOR, ELASTIC WAVE FILTER, AND ANTENNA SHARING DEVICE USING THE SAME 有权
    弹性波共振器,弹性波滤波器,以及使用其的天线共享装置

    公开(公告)号:US20100194496A1

    公开(公告)日:2010-08-05

    申请号:US12757475

    申请日:2010-04-09

    CPC classification number: H03H9/6483 H03H9/0071 H03H9/02944 H03H9/6496

    Abstract: An acoustic wave resonance device includes: piezoelectric substrate (1), first acoustic wave resonator (100) provided on an upper surface of piezoelectric substrate (1) and including first interdigital transducer electrode (110), and second acoustic wave resonator (200) provided on piezoelectric substrate (1) and including second interdigital transducer electrode (210). First acoustic wave resonator (100) and second acoustic wave resonator (200) are connected to each other. An overlap width of a plurality of first comb-shaped electrodes (112) forming first acoustic wave resonator (100) is larger than an overlap width of a plurality of second comb-shaped electrodes (212) forming second acoustic wave resonator (200). With such a configuration, frequencies in which a transverse mode spurious response is generated can be distributed and loss can be reduced.

    Abstract translation: 声波共振装置包括:压电基板(1),设置在压电基板(1)的上表面上并包括第一叉指式换能器电极(110)的第一声波谐振器(100)和设置在第二声波谐振器 在压电基板(1)上并且包括第二叉指式换能器电极(210)。 第一声​​波谐振器(100)和第二声波谐振器(200)彼此连接。 形成第一声波谐振器(100)的多个第一梳状电极(112)的重叠宽度大于形成第二声波谐振器(200)的多个第二梳状电极(212)的重叠宽度。 通过这样的配置,可以分配产生横向模式杂散响应的频率,并且可以减少损耗。

    ELASTIC WAVE ELEMENT
    6.
    发明申请
    ELASTIC WAVE ELEMENT 有权
    弹性波形元件

    公开(公告)号:US20100060101A1

    公开(公告)日:2010-03-11

    申请号:US12532426

    申请日:2008-05-09

    CPC classification number: H03H9/0222

    Abstract: An elastic wave element includes a piezoelectric substrate, an interdigital electrode provided on the piezoelectric substrate, a silicon oxide film covering the interdigital electrode, and a silicon nitride oxide film provided on the silicon oxide film. A film thickness H of the silicon oxide film and a wave length λ of an elastic wave propagating through the piezoelectric substrate satisfies a relation of H/λ≧0.15. The elastic wave element reduces fluctuation of propagation characteristics of elastic waves, and has high reliability.

    Abstract translation: 弹性波形元件包括压电基板,设置在压电基板上的叉指电极,覆盖指状电极的氧化硅膜和设置在氧化硅膜上的氮氧化硅膜。 氧化硅膜的膜厚H和通过压电基板传播的弹性波的波长λ满足H /λ≥0.15的关系。 弹性波元件减少弹性波的传播特性的波动,并且具有高的可靠性。

    Elastic wave resonator, elastic wave filter, and antenna sharing device using the same
    8.
    发明授权
    Elastic wave resonator, elastic wave filter, and antenna sharing device using the same 有权
    弹性波谐振器,弹性波滤波器和使用其的天线共享装置

    公开(公告)号:US08476991B2

    公开(公告)日:2013-07-02

    申请号:US12757475

    申请日:2010-04-09

    CPC classification number: H03H9/6483 H03H9/0071 H03H9/02944 H03H9/6496

    Abstract: An acoustic wave resonance device includes: piezoelectric substrate (1), first acoustic wave resonator (100) provided on an upper surface of piezoelectric substrate (1) and including first interdigital transducer electrode (110), and second acoustic wave resonator (200) provided on piezoelectric substrate (1) and including second interdigital transducer electrode (210). First acoustic wave resonator (100) and second acoustic wave resonator (200) are connected to each other. An overlap width of a plurality of first comb-shaped electrodes (112) forming first acoustic wave resonator (100) is larger than an overlap width of a plurality of second comb-shaped electrodes (212) forming second acoustic wave resonator (200). With such a configuration, frequencies in which a transverse mode spurious response is generated can be distributed and loss can be reduced.

    Abstract translation: 声波共振装置包括:压电基板(1),设置在压电基板(1)的上表面上并包括第一叉指式换能器电极(110)的第一声波谐振器(100)和设置在第二声波谐振器 在压电基板(1)上并且包括第二叉指式换能器电极(210)。 第一声​​波谐振器(100)和第二声波谐振器(200)彼此连接。 形成第一声波谐振器(100)的多个第一梳状电极(112)的重叠宽度大于形成第二声波谐振器(200)的多个第二梳状电极(212)的重叠宽度。 通过这样的配置,可以分配产生横向模式杂散响应的频率,并且可以减少损耗。

    Surface acoustic wave device, surface acoustic wave filter and antenna duplexer using the same, and electronic equipment using the same
    9.
    发明授权
    Surface acoustic wave device, surface acoustic wave filter and antenna duplexer using the same, and electronic equipment using the same 有权
    表面声波装置,表面声波滤波器和使用其的天线双工器,以及使用其的电子设备

    公开(公告)号:US08035460B2

    公开(公告)日:2011-10-11

    申请号:US12279631

    申请日:2007-02-14

    CPC classification number: H03H9/14538 H03H3/08 H03H9/1452 H03H9/6483 Y10T29/42

    Abstract: A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)≧4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.

    Abstract translation: 表面声波装置包括:包含铌酸锂的基板; IDT设置在所述基板的上表面上并且包括多个电极指; 以及覆盖IDT并在其上表面具有不平坦形状的保护膜。 当IDT的一个间距的间距宽度为p时,一个电极指的宽度为p1,电极指之间的宽度为p2,IDT的厚度为h,满足关系,p1 + p2 = p,h /(2×p)≥4.5%。 由此,能够实现适当的反射特性,能够获得具有优异的频率和电特性的温度系数的表面声波装置。

    SURFACE ACOUSTIC WAVE DEVICE, SURFACE ACOUSTIC WAVE FILTER AND ANTENNA DUPLEXER USING THE SAME, AND ELECTRONIC EQUIPMENT USING THE SAME
    10.
    发明申请
    SURFACE ACOUSTIC WAVE DEVICE, SURFACE ACOUSTIC WAVE FILTER AND ANTENNA DUPLEXER USING THE SAME, AND ELECTRONIC EQUIPMENT USING THE SAME 有权
    表面声波装置,表面声波滤波器及使用其的天线双工器及使用其的电子设备

    公开(公告)号:US20100164646A1

    公开(公告)日:2010-07-01

    申请号:US12279631

    申请日:2007-02-14

    CPC classification number: H03H9/14538 H03H3/08 H03H9/1452 H03H9/6483 Y10T29/42

    Abstract: A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)≧4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.

    Abstract translation: 表面声波装置包括:包含铌酸锂的基板; IDT设置在所述基板的上表面上并且包括多个电极指; 以及覆盖IDT并在其上表面具有不平坦形状的保护膜。 当IDT的一个间距的间距宽度为p时,一个电极指的宽度为p1,电极指之间的宽度为p2,IDT的厚度为h,满足关系,p1 + p2 = p,h /(2×p)≥4.5%。 由此,能够实现适当的反射特性,能够获得具有优异的频率和电特性的温度系数的表面声波装置。

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