Surface acoustic wave device, surface acoustic wave filter and antenna duplexer using the same, and electronic equipment using the same
    1.
    发明授权
    Surface acoustic wave device, surface acoustic wave filter and antenna duplexer using the same, and electronic equipment using the same 有权
    表面声波装置,表面声波滤波器和使用其的天线双工器,以及使用其的电子设备

    公开(公告)号:US08035460B2

    公开(公告)日:2011-10-11

    申请号:US12279631

    申请日:2007-02-14

    IPC分类号: H03H9/64 H03H9/72 H03H3/08

    摘要: A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)≧4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.

    摘要翻译: 表面声波装置包括:包含铌酸锂的基板; IDT设置在所述基板的上表面上并且包括多个电极指; 以及覆盖IDT并在其上表面具有不平坦形状的保护膜。 当IDT的一个间距的间距宽度为p时,一个电极指的宽度为p1,电极指之间的宽度为p2,IDT的厚度为h,满足关系,p1 + p2 = p,h /(2×p)≥4.5%。 由此,能够实现适当的反射特性,能够获得具有优异的频率和电特性的温度系数的表面声波装置。

    SURFACE ACOUSTIC WAVE DEVICE, SURFACE ACOUSTIC WAVE FILTER AND ANTENNA DUPLEXER USING THE SAME, AND ELECTRONIC EQUIPMENT USING THE SAME
    2.
    发明申请
    SURFACE ACOUSTIC WAVE DEVICE, SURFACE ACOUSTIC WAVE FILTER AND ANTENNA DUPLEXER USING THE SAME, AND ELECTRONIC EQUIPMENT USING THE SAME 有权
    表面声波装置,表面声波滤波器及使用其的天线双工器及使用其的电子设备

    公开(公告)号:US20100164646A1

    公开(公告)日:2010-07-01

    申请号:US12279631

    申请日:2007-02-14

    IPC分类号: H03H9/76 H03H9/02 H01L41/22

    摘要: A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)≧4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.

    摘要翻译: 表面声波装置包括:包含铌酸锂的基板; IDT设置在所述基板的上表面上并且包括多个电极指; 以及覆盖IDT并在其上表面具有不平坦形状的保护膜。 当IDT的一个间距的间距宽度为p时,一个电极指的宽度为p1,电极指之间的宽度为p2,IDT的厚度为h,满足关系,p1 + p2 = p,h /(2×p)≥4.5%。 由此,能够实现适当的反射特性,能够获得具有优异的频率和电特性的温度系数的表面声波装置。

    Surface acoustic wave filter, and saw duplexer
    3.
    发明授权
    Surface acoustic wave filter, and saw duplexer 有权
    表面声波滤波器和锯式双工器

    公开(公告)号:US07498898B2

    公开(公告)日:2009-03-03

    申请号:US10587240

    申请日:2005-02-02

    IPC分类号: H03H9/72 H03H9/64

    CPC分类号: H03H3/02 H03H9/6433

    摘要: A plurality of surface acoustic wave resonators including a comb electrode and a grating reflector are coupled on a piezoelectric substrate. Dielectric film is formed on the surface of at least one surface acoustic wave resonator. No dielectric film is formed on the surface of at least one other surface acoustic wave resonator. Thus, a SAW filter where the insertion loss into a pass band is small, the steepness is sufficient, and the band is wide can be obtained.

    摘要翻译: 包括梳状电极和光栅反射器的多个声表面波谐振器耦合在压电基片上。 介电膜形成在至少一个表面声波谐振器的表面上。 在至少一个其它表面声波谐振器的表面上不形成介质膜。 因此,其中插入损耗进入通带的SAW滤波器小,陡度足够,并且可以获得宽带。

    ELECTRONIC PART AND ELECTRONIC EQUIPMENT WITH ELECTRONIC PART
    4.
    发明申请
    ELECTRONIC PART AND ELECTRONIC EQUIPMENT WITH ELECTRONIC PART 有权
    电子部件和电子部件

    公开(公告)号:US20090115554A1

    公开(公告)日:2009-05-07

    申请号:US12333855

    申请日:2008-12-12

    IPC分类号: H03H9/00

    摘要: An electronic part, an object of which is to improve temperature characteristics and electrical properties, includes a substrate (1), a comb-type electrode (2) that is disposed on the upper surface of the substrate (1), and a protective film (4) that covers the comb-type electrode (2) and has an uneven shape at its top surface. If the pitch width of one pitch in the uneven shape of the protective film (4) is L, the width of one pitch of a convex portion (4a) of the unevenness in the uneven shape of the protective film (4) is L1, the width of one pitch of a concave portion (4b) thereof is L2, the pitch width of one pitch of the comb-type electrode (2) is p, the width of one of electrode fingers which form the comb-type electrode (2) is p1 and the width between the electrode fingers is p2, then each parameter is set so that the following expressions are satisfied, L1≦p1 and L2≧p2 (herein, the correlations of L≈p, p1+p2=p and L1+L2=L are satisfied).

    摘要翻译: 电子部件,其目的在于提高温度特性和电性能,包括基板(1),设置在基板(1)的上表面上的梳状电极(2)和保护膜 (4),其覆盖梳状电极(2),并且在其顶面具有不均匀的形状。 如果保护膜(4)的凹凸形状中的一个间距的间距宽度为L,则保护膜(4)的凹凸形状的凹凸的凸部(4a)的一个间距的宽度为L1, 其凹部(4b)的一个间距的宽度为L2,梳型电极(2)的一个间距的间距宽度为p,形成梳型电极(2)的电极指的一个的宽度 )为p1,电极指之间的宽度为p2,则设定每个参数,使得满足以下表达式:L1 <= p1和L2> = p2(这里,L≈p,p1 + p2 = p 并且L1 + L2 = L)。

    Surface acoustic wave filter utilizing a layer for preventing grain boundary diffusion
    5.
    发明授权
    Surface acoustic wave filter utilizing a layer for preventing grain boundary diffusion 有权
    表面声波滤波器利用防止晶界扩散的层

    公开(公告)号:US06909341B2

    公开(公告)日:2005-06-21

    申请号:US10168284

    申请日:2001-10-23

    摘要: In a surface acoustic wave (SAW) filter including a substrate and an electrode formed on the substrate, the electrode includes a base layer, a first metal layer made of a metal consisting of Al or consisting mainly of Al, and having a given orientation relative to the substrate, a second layer for preventing the first metal layer from migration of Al atoms occurring in vertical to the substrate, and a third layer for adjusting a thickness of the layer. In this SAW filter having an arbitrary layer thickness, the layer hardly causes grain boundary diffusion, and grains of the layer can be made fine for effective resistance to stress. Thus, in this SAW filter, the migration of the Al atoms of the electrode that is associated with the SAW propagation-induced stress imposed on the electrode is inhibited. Accordingly, the filter exhibits excellent resistance against electric power.

    摘要翻译: 在包括基板和形成在基板上的电极的表面声波(SAW)滤波器中,电极包括基底层,由Al组成的金属或主要由Al组成的金属构成的第一金属层,并且具有给定的取向相对 向基板施加用于防止第一金属层垂直于基板发生的Al原子迁移的第二层,以及用于调整该层厚度的第三层。 在具有任意层厚度的SAW滤波器中,该层几乎不引起晶界扩散,并且可以使该层的晶粒细微地产生有效的抗应力。 因此,在这种SAW滤波器中,与施加在电极上的SAW传播引起的应力有关的电极的Al原子的迁移被抑制。 因此,过滤器表现出优异的电力抵抗性。

    Surface acoustic wave device, and mobile communication device and sensor both using same
    6.
    发明授权
    Surface acoustic wave device, and mobile communication device and sensor both using same 有权
    表面声波装置,以及移动通信装置和传感器都采用相同的方式

    公开(公告)号:US07109828B2

    公开(公告)日:2006-09-19

    申请号:US10482442

    申请日:2003-04-14

    IPC分类号: H03H9/25 H03H9/64

    摘要: In a surface acoustic wave (SAW) device, such as a SAW resonator or a SAW filter, loss is minimized and steep characteristics are improved. IDT electrodes and a reflector are provided to a piezoelectric substrate cut out at a cut-angle which allows the substrate to excite a leaky surface acoustic wave (LSAW). The IDT electrodes have a given film thickness and a given pitch “p” of finger-electrodes. A phase velocity of the SAW is reduced to slower than a phase velocity “vb”of a slow shear wave propagating on the piezoelectric substrate, and a resonance frequency “f” satisfies a relation of 2×p≦vb/f. This structure allows the use of a Rayleigh surface acoustic wave (RSAW) which does not produce propagation loss, and improving insertion-loss and steep characteristics from those of a conventional SAW device using the LSAW.

    摘要翻译: 在诸如SAW谐振器或SAW滤波器的表面声波(SAW)器件中,损耗最小化并且提高了陡峭的特性。 IDT电极和反射器被提供给以切割角度切割的压电基板,该基板允许基板激发泄漏的表面声波(LSAW)。 IDT电极具有给定的膜厚度和指状电极的给定间距“p”。 SAW的相速度比在压电基板上传播的慢剪切波的相速度“vb”慢,共振频率“f”满足2pp = vb / f的关系。 该结构允许使用不产生传播损耗的瑞利声表面波(RSAW),并且使用使用LSAW的常规SAW器件的那些改善插入损耗和陡峭特性。

    Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus
    8.
    发明申请
    Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus 有权
    压电元件,喷墨头,角速度传感器,其制造方法和喷墨记录装置

    公开(公告)号:US20060146097A1

    公开(公告)日:2006-07-06

    申请号:US11362583

    申请日:2006-02-24

    IPC分类号: B41J2/045

    摘要: In a piezoelectric element, an adhesive layer 12 is provided on a substrate 11, a first electrode layer 14 made of a noble metal containing titanium or titanium oxide is provided on the adhesive layer 12, and an orientation control layer 15 that is preferentially oriented along a (100) or (001) plane is provided on the first electrode layer 14. In the vicinity of a surface of the orientation control layer 15 that is closer to the first electrode layer 14, a (100)- or (001)-oriented region extends over titanium or titanium oxide located on one surface of the first electrode layer 14 that is closer to the orientation control layer 15, and the cross-sectional area of the region in the direction perpendicular to the thickness direction gradually increases in the direction away from the first electrode layer 14 toward the opposite side. Further, a piezoelectric layer 16 that is preferentially oriented along a (001) plane is provided on the orientation control layer 15.

    摘要翻译: 在压电元件中,在基板11上设置粘合剂层12,在粘合剂层12上设置由含有钛或氧化钛的贵金属构成的第一电极层14,优选的是取向控制层15 在第一电极层14上设置(100)或(001)面。 在取向控制层15的靠近第一电极层14的表面附近,位于第一电极层14的一个表面上的(100)或(001)取向区域延伸到钛或氧化钛上 更靠近取向控制层15,并且沿与厚度方向正交的方向的区域的横截面积沿远离第一电极层14的方向逐渐增大。 此外,在取向控制层15上设置优选沿(001)面取向的压电体层16。

    Method for fabricating dielectric device
    10.
    发明授权
    Method for fabricating dielectric device 失效
    电介质器件制造方法

    公开(公告)号:US5868948A

    公开(公告)日:1999-02-09

    申请号:US724654

    申请日:1996-10-01

    IPC分类号: H01G4/12 H01L37/02 B44C1/22

    CPC分类号: H01G4/12 H01L37/02

    摘要: A method for fabricating a dielectric device including a capacitor, a pyroelectric infrared detector, and the like is disclosed. The method comprises the steps of etching a dielectric substance film formed on a substrate to form a predetermined pattern with an etchant comprised of hydrofluoric acid and an oxidizing agent, and removing residues resulting from the etching by treating the etched layer with a first treating solution containing a reducing agent and subsequently with a second treating solution containing an acid.

    摘要翻译: 公开了一种用于制造包括电容器,热电型红外线检测器等的电介质器件的方法。 该方法包括以下步骤:利用由氢氟酸和氧化剂组成的蚀刻剂来蚀刻形成在基板上的电介质膜以形成预定图案,并且用含有第一处理溶液的蚀刻层处理蚀刻层去除残留物 还原剂,随后用含有酸的第二处理溶液。